SBE 175 Search Results

sbx 1620

Abstract: L 7206 SBE160 95500-01 L7206 6363G1 261G2 LH-SBE320-SL 75XXX-XX 75500-01
Contextual Info: W i r v e r b i n d e n S i e Inhalt Allgemeines 3-5 SB Stecker SB 50, SB 175, SB 350 6-7 SBX Stecker SBX 175, SBX 350 8-9 SBE Stecker SBE 80, SBE 160, SBE 320 DIN-Stecker 14 - 15 säurebeständige DIN-Stecker 16 - 17 Powerpole Pak 18 - 19 Powerpole 20 - 21

535 mcm cable

Contextual Info: SBE Connectors SBE" 2 pole connector Anderson Power Products® SBE® 2 pole connector is available in 160 and 320 amps ratings for use to 150 Volts continuous AC or DC operation. Mechanical keys in connectors of the same color only will mate and different colors may be selected to identify other voltages, thus preventing the mismatching of the

M3335

Abstract: 6075A BYP20 1 MBH 50 D 100
Contextual Info: SbE T> TllOflSb ODMllbS 533 IPHIN BYP20 SERIES nHILIPS INTERNATIONAL SbE D ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE 7 - 0 3 - I 7 Glass-passivated, high-efficiency epitaxial rectifie r diodes in plastic envelopes, featuring low reverse

E050EWB

Abstract: E1000WB E500JN E075 E500WB
Contextual Info: 4 Industrial Control Transformers The SBE - Encapsulated, Copper Wound Series The SBE Encapsulated industrial control transformers are epoxy encapsulated to seal the transformer windings against moisture, dirt and industrial contaminants. Extra deep, molded terminal barriers reduce the chance of

DDM1174

Abstract: TG3110 D8397 BYP21 BYP21-50 DDM1171 T0311 RECTIFIER DIODES PHILIPS t031
Contextual Info: SbE » 711002b Ü G m i 7 D b04 • PHIN T - D 3 - I 7 BYP21 SERIES JLA SbE D PHILIPS INTERNATIONAL PKN ULTRA FAST-RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse

BYD13

Abstract: BYD13D IEC134 PHILIPS BYD13
Contextual Info: SbE D 711D 02b 0040541 S4T • P H I N BYD13 SERIES V r HILIPS INTERNA TI O NA L SbE ì> 7 'OX"IS CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes and intended for general purpose rectifier applications.

Contextual Info: SBE Connectors Operating Characteristics Ampere/Temperature Curves See Figures 1 through 4 Ampere/Temperature curves help to evaluate and rate SBE® connectors in terms of applied current load versus temperature rise. Each graph shows the curves resulting from loading the smallest and largest cables (AWG size) normally

t3d diode

Abstract: Diode T3D 64 T3D 65 diode T3D 64 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode diode t3d 663 t03 T3D 28 diode
Contextual Info: 711GöSb □Q4Db71 Ib ö • PHIN SbE D P H IL IP S INTERNATIONAL B YV28 SERIES SbE » EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching

byd74

Abstract: BYD74E BYD74A BDY74A
Contextual Info: SbE » 711002b 0CI40bl7 101 • PHIN BYD74 SERIES PHILIPS INTERNATIONAL SbE ]> v n m n m i v EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching characteristics

PH diode C47

Abstract: C8V2 PH BZT03 marking FZM PH C47 C270 diode c82 ScansUX7 ph c8v2 C100
Contextual Info: SbE D TllDÖEb D0407ST SMI • P H I N PHILIPS INTERNATIONAL BZT03 SERIES T - / 1 - 2 3 _ SbE D REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres­

Contextual Info: T O U L Recognized CSA Certified File No. E26226 File No. LR25154 QUICK COLOR REFERENCE RRL3 Ho us i ^ P ow erpole SB SBE SBX P ow erpole SB SBE SBX 15 to 180 am ps 50 to 350 am ps 160 to 320 am ps 175 to 350 am ps 15 to 45 am ps 175 to 350 am ps 160 to 320 am ps

BAW62

Abstract: 1970 oscilloscope T0309 T-03-09
Contextual Info: SbE D • 711002b 004031^ 231 M P H I N SbE D PHILIPS INTERNATIONAL BAW62 Jj U O C □ UU 1 r - o 3 ~ o * \ HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA

ALPs modulator

Abstract: BY438 diode BY438 JI75 TRANSISTOR D 819
Contextual Info: SbE ]> 7110ÖSL 0 040 45 1 SOfl • P H I N BY438 P H IL IP S INTERNATIONAL T-OI-is SbE D PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The

01564 nec

Abstract: HP 3700 UL94/V0
Contextual Info: Connector Features S ERIES Powerpole SB ® SBE ® SBO ® SBS ® SBX ® EBC DIN POWER CLIP ® POWER DRAWER ® POWERMOD ® POWERMOD ® HP A & B POWERMOD ® PS X MARC SAF-D-GRID SPEC PAK ™ S ERIES Powerpole ® SB ® SBE ® SBO ® SBS ® SBX ® EBC (DIN)

BAS45L

Abstract: S18B
Contextual Info: SbE D m 711DÖ5b 0DMD1Ö7 T1D « P H I N PHILIPS INTERNATIONAL BAS 45L SbE D T -O T -tS LOW LEAKAG E DIODE FOR SURFACE M OUNTING The BAS45L is a switching diode w ith a very low reverse current. This SM diode is a leadless diode in a hermetically sealed SOD-8 O envelope w ith lead/tin-plated metal

C6V2 ST

Abstract: ST C6V8 C5V1 ST BZV85 c5v6 st C9V1 ST ScansUX7 C4V3 ST IEC134 C4V7 ST
Contextual Info: SbE D • 711QöBti O Q H O ? 6^ P H I LI P S I N T E R N A T I O N A L 12Ö M P H I N BZV85 SERIES SbE D VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended for stabilization purposes. The series covers the normalized E24 ± 5% range of nominal working voltages

BY448

Abstract: BY458 IEC134 T0115
Contextual Info: SbE T> 7 1 1 ÜÖ2 L ÜG4045S 1 53 H P H I N BY448 BY458 V PHILIPS I NT E RNA T I ONA L SbE D m i ü T - o i - t s PARALLEL EFFIC IEN C Y DIODES Double-diffused passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, intended for use as efficiency diodes in transistorized horizontal deflection circuits and PPS power-pack system

Transistor SSI 5504 175

Abstract: transistor b 1238 SSI 5504 175 0507 transistor 0235S2 BFP91A transistor d 1663
Contextual Info: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features

d 1879 TRANSISTOR

Abstract: transistor D 1666 BFQ23C transistor d 1557 BFP91A B 1449 transistor TRANSISTOR D 471
Contextual Info: Philips Sem Product specification “^ 3 / — / f PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE ]> • BFQ23C 711Gfl5b 0 D M S 4 1 0 S41 PINNING PNP transistor in

BFQ23C

Abstract: BFP91A t-31-21 537D UBB843 BFP91A NPN PHILIPS SOT173
Contextual Info: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features

MSB002

Abstract: PH* SOT223 transistor NPN planar RF transistor NPN RF Amplifier BFG741 philips MATV amplifiers
Contextual Info: Objective specification Philips Semiconductors ^ 3 3 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE T> BFG741 7110flSb 004S3S7 bTl «PHIN PINNING PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 2 base

BFG741

Contextual Info: Objective specification Philips Semiconductors NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES BFG741 SbE D • 7110flSb DÜMS3S7 bTl IPHIN PINNING PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 2 base

Contextual Info: Preliminary specification Philips Semiconductors BFQ292 PNP HDTV video transistor PHILIPS INTERNATIONAL FEATURES SbE D VllGflEh D04SL.7S 3fc.T PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product

transistor tt 2222

Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
Contextual Info: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability