BFG741
Abstract: No abstract text available
Text: Objective specification Philips Semiconductors NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES BFG741 SbE D • 7110flSb DÜMS3S7 bTl IPHIN PINNING PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 2 base
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BFG741
7110flSb
OT223
BFG741
OT223.
25K/W
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BFG741
Abstract: No abstract text available
Text: BFG741 NPN 7 GHz wideband transistor PINNING FEATURES PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 1 emitter 2 base • SOT223 plastic envelope 3 emitter • High output voltage 4 collector • Integrated emitter-ballasting
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BFG741
OT223
BFG741
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SOT-173
Abstract: sot173 BFP96 BFQ32C
Text: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A
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BFG198
BFG505
BFG505/X
BFG505/XR
BFG520
BFG520/X
BFG520/XR
BFG540
BFG540/X
BFG540/XR
SOT-173
sot173
BFP96
BFQ32C
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BFG741
Abstract: L0130
Text: Philip^em iconductors • bbSBTBl DQBlHbfl DTb M A P X ^ ^ b je c tiv ^ p e c if ic a tiO T NPN 7 GHz wideband transistor BFG741 N AUER PHILIPS/DISCRETE bTE D PINNING FEATURES DESCRIPTION PIN • Low distortion • Gold metallization ensures excellent reliability
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0D314bfl
BFG741
OT223
BFG741
25K/W
OT223.
L0130
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MSB002
Abstract: PH* SOT223 transistor NPN planar RF transistor NPN RF Amplifier BFG741 philips MATV amplifiers
Text: Objective specification Philips Semiconductors ^ 3 3 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE T> BFG741 7110flSb 004S3S7 bTl «PHIN PINNING PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 2 base
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BFG741
0DM53S7
OT223
BFG741
OT223.
MSB002
MSB002
PH* SOT223 transistor
NPN planar RF transistor
NPN RF Amplifier
philips MATV amplifiers
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors H b b S B ^ B l O D B lIb fl 0Tb H A P X ^O bjectivespecification NPN 7 GHz wideband transistor BFG741 N APIER P H IL IP S /D IS C R E T E FEATURES b'lE D PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures excellent reliability
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BFG741
OT223
BFG741
25K/W
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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LCD01
BF547A
transistor bf 175
BFG65 equivalent
BF547B
BFG25AXD
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BFT92A
Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E
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BFY90
TQ-92
BF689K
BF763
SOt-37
BFT24
BFW92
BFW93
OT-122E
OT-23
BFT92A
BFT93A
BFG134
bf689
sot37
sot173
BFG34
BFQ52
bfg65 sot143
philips bfw92
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SOT-143R
Abstract: sot-143 rl SOT143R sot143 RA
Text: 99 Surface Mount Devices Wideband Transistors cont. f (MHz) P ino u t See S e ctio n VII 12 12 2000 2000 X AB — 2000 2000 2000 800 12 10.9 10.9 10.9 17.5 800 2000 2000 2000 800 S Q X AB Q 2.4 2.4 2.3 2.3 2.3 800 800 800 800 800 17.5 17.5 17 17 17 800 800
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BFG33/X
BFG33/XR
BFG35
BFG67
BFG67/X
BFG67/XR
BFG92A
BFG92A/X
BFG92A/XR
BFG93A
SOT-143R
sot-143 rl
SOT143R
sot143 RA
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BFG591 amplifier
Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors
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OT122
OT143
OT223
OT323
BFS17W
BFG17A
BFG16A
BF547W
BF747W
BFT25
BFG591 amplifier
SC08a
bfr591
sot173x
BB544
sot122
sot172
bfg65 sot143
SIEMENS BFP520
macro-X ceramic
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BFG520
Abstract: BFQ67 Philips RF PREAMP cordless phone circuit BFG591 blt81 BFR93AW BFR93A sot103 phone circuit
Text: RF/Microwave Devices RF Wideband Transistors RF Wideband Transistors for Pagers RF amp see Fig. 1 SOT323 SOT23 SOT143 BFR92AW BFS25A BFS505 BFS520 BFR92A BFT25A BFR505 BFR520 BFG92A/X BFG25A/X BFG505/X BFG520/X MIX see RF amp O SC see RF amp ante nna \ /
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OT323
BFR92AW
BFS25A
BFS505
BFS520
BFR92A
BFT25A
BFR505
BFR520
OT143
BFG520
BFQ67
Philips RF PREAMP
cordless phone circuit
BFG591
blt81
BFR93AW
BFR93A
sot103
phone circuit
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