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    2SD879

    Abstract: Transistor 5503
    Text: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


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    PDF EN550F 2SD879 2003B 2SD879] 2SD879s 750mW) 2SD879 Transistor 5503

    2SD879

    Abstract: No abstract text available
    Text: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


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    PDF EN550F 2SD879 2003B 2SD879] 2SD879s 750mW) 14Ltd. 2SD879

    IC LA3220

    Abstract: LA3220 20LOG ENN912D 9127 diode LA3220 amp
    Text: Ordering number:ENN912D Monolithic Linear IC LA3220 2-Channel Equalizer Amplifier with ALC Features Package Dimensions • Dual pre-amp with built-in ALC pre-amp x 2 + ALC × 2 . • Due to high gain, recording amp can be formed separately (variable monitor possible).


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    PDF ENN912D LA3220 003A-DIP14 LA3220] 65max 51min DIP14 IC LA3220 LA3220 20LOG ENN912D 9127 diode LA3220 amp

    LA4160

    Abstract: Germanium audio Amplifier diagram germanium diode equivalent TR13 TR17 TR22 GERMANIUM DIODE diode germanium catalog 12800T audio preamplifier circuit diagram
    Text: Ordering number:ENN870D Monolithic Linear IC LA4160 Single-Chip Tape Recorder Audio System Features Package Dimensions • A single package contaning preamplifier, ALC circuit, power amplifier. • Preamplifier with high gain, and power amplifier with high gain and output.


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    PDF ENN870D LA4160 005A-DIPtd. LA4160 Germanium audio Amplifier diagram germanium diode equivalent TR13 TR17 TR22 GERMANIUM DIODE diode germanium catalog 12800T audio preamplifier circuit diagram

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


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    PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    2SK752

    Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
    Text: PART NUMBER INDEX Part Number Manufacturer 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 2SK762 2SK762A 2SK763 2SK763A 2SK764 2SK764A 2SK765 2SK765A 2SK766 2SK767 2SK768 2SK769 2SK770 2SK771 2SK772 2SK773 2SK774 2SK775 2SK776 2SK777


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    PDF 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 NEC diode 3N125 3N126 2SK791 3N105 3N134 82230

    IS188

    Abstract: nab tape preamp IC LA3220 DS442 diode TAPE recording ic LA3220 DS442 LA3220 3003B DS422 LA4627N
    Text: Ordering number : EN912E Monolithic Linear IC LA3220 For Radio Cassette Recorders Equalizer Amplifier with ALC Overview The LA3220 is a 2ch-low-noise equalizer amplifier with ALC for radio cassette recorders. Features • Dual pre-amp with built-in ALC pre-amp x 2 + ALC × 2 .


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    PDF EN912E LA3220 LA3220 IS188 nab tape preamp IC LA3220 DS442 diode TAPE recording ic LA3220 DS442 3003B DS422 LA4627N

    1S188 Diode

    Abstract: 1S188 LA4160 CNF7047 DS442 TR13 TR17 TR22 Germanium Amplifier Circuit diagram 1S1882
    Text: Ordering number : EN870E Monolithic Linear IC LA4160 Single-Chip Tape Recorder Audio System Overview LA4160 is Single-chip tape recoder audio system. A single package contaning preamplifier, ALC circuit, power amplifier. Features • Preamplifier with high gain, and power amplifier with high gain and output.


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    PDF EN870E LA4160 LA4160 1S188 Diode 1S188 CNF7047 DS442 TR13 TR17 TR22 Germanium Amplifier Circuit diagram 1S1882

    2N1152

    Abstract: 2N1149 2N1150 2N1151 2N1265 2N1193 2N1212 RCA 2n1184a 2N1247 2N1264
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507


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    BC238BP

    Abstract: BF494C BC238CP BSX77 2N295 BF194 2N2954 2SC398 bf494 motorola BF332
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC398 2SC398 2SC399 ~~g~~~ 15 20 25 30 35 40 2N2477 2N2847 2N2848 2N2958 2N3115 2N3982 2N3982 2N3982 2SC2295 2SC33 2SC204 BSX76 BSX77 2SC323


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    PDF 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC399 BC238BP BF494C BC238CP BSX77 2N295 BF194 2N2954 bf494 motorola BF332

    Motorola transistor smd marking codes

    Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
    Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


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    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


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    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


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    PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    TOLD9211

    Abstract: LTC485 Spice lt1073 equivalent ic TOLD-9211 LT1073-5 ltc485 spice model germanium photodiode PIN LT1122 LT1073 toshiba fet databook
    Text: LINEAR TECHNOLOGY JUNE 1991 IN THIS ISSUE . . . Welcome to Linear Technology . 1 Bob Swanson Editor's page . 2 Walt Jung LT1223 High Speed Current Feedback Amplifier. 3 Bill Gross LT1220 High Speed CB Process Op Amp . 4


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    PDF LT1223 LT1220 LT1122 LT1074 LT1073 LTC485 D-8057 /125M June1991 TOLD9211 LTC485 Spice lt1073 equivalent ic TOLD-9211 LT1073-5 ltc485 spice model germanium photodiode PIN toshiba fet databook

    kijima

    Abstract: 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium
    Text: Ordering number:EN550F _ 2SD879 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications A p p licatio n s • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. • The charge time is approximately 1 second faster than th at of germanium transistors.


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    PDF EN550F 2SD879 2SD879s 750mW) kijima 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium

    1s188fm

    Abstract: 1S426 SVC321 1SS53 1S188-FM SVC201SP SVC321SP SVC201Y SVC202 SVC203
    Text: ♦ :Dnl t j j e 20 40~600 IV <35(9V) Plastic SVC321 388.1-459.1(1.2 V ) 20.30-27.05(8V) Plastic SVC321SP 388.1-459.1(1.2V) 20.30-27.05(8V) Plastic(SP) 399.7-516.8(1V ) 25.19-46.87(9V) Plastic 345.0-408.4(3V ) 18. 92-25. 61 (25V) Plastic SVC303Y AH Electronic


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    PDF 1SS53T SVC303Y SVC321 SVC321SP SVC311 SVC333 SVC201Y SVC201SP SVC202* SVC203* 1s188fm 1S426 SVC321 1SS53 1S188-FM SVC201SP SVC321SP SVC201Y SVC202 SVC203

    SANYO TSF 1303

    Abstract: TSF 1303 LA7555
    Text: jering number : EN 2927 Monolithic Linear IC LA7555 No.2927 i IF Signal Processing VIF + SIF Circuit for TV / VCR Use The LA7555 is a full sync detection method VIF + SIF monolithic linear IC using a PLL. It has excellent 920kHz beat and buzz beat characteristics, m aking it ideal for use in audio multiplexing and high-quality


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    PDF LA7555 LA7555 920kHz HW-6226-4 MA-6342 19t-19t 100pF KS-6102-1 TSF1110 75MHz SANYO TSF 1303 TSF 1303

    F5315

    Abstract: S1F diode V1F diode DIP-24 LA7570 vtr ic, for audio video switch tv vestigial sideband demodulation
    Text: Ordering number:EN 3293 Monolithic Linear 1C LA7570 N o.3293 i F SAXYO TV,VTR IF Signal Processor Super Split F’JÖC^JF + SIF r i X Overview V X %"V / • • v' ;Äf vwr /ji« >v /«< .< ¡k T he L A 7570 is a (V IF + SIF) circu it IC to support im p le m e n ta tio n ^ £ n ig h ^ i u r G ^ u a l i t y y f t d high


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    PDF LA7570 LA7570 1S-15 F5315 S1F diode V1F diode DIP-24 vtr ic, for audio video switch tv vestigial sideband demodulation

    Untitled

    Abstract: No abstract text available
    Text: O rdering number: EN 550E J SAW O N 0.550 E _ 2 S D 8 7 9 NPN Epitaxial Planar Silicon Transistor 1.5 V and 3 V Strobe Applications Features . In applications where two NiCd batteries are used to provide 2.4V, two 2SD879 transistors are used.


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    PDF 2SD879 750mW) 5137KI/3075KI/5244KI 2SD879 I350T

    IC LA3220

    Abstract: LA3220 DS642 variable resistor 2.2k Na912-1 DS442
    Text: Ordering number : EN 912D Monolithic Linear IC LA3220 No. 9 1 2 D S A \Y O i 2 - C h a n n e l E q u a l i z e r Ampe with ALC F E A T U R ES • Dual pre-amp with built-in A LC pre-amp x 2 + A LC x 2 . • Due to high gain, recording amp can be formed separately, (variable monitor possible)


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    PDF LA3220 IC LA3220 LA3220 DS642 variable resistor 2.2k Na912-1 DS442