2SK758 Search Results

2sk2324

Contextual Info: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown 3.0±0.2 15.0±0.3 ON-resistance M Di ain sc te on na tin nc ue e/

2SK758

Contextual Info: Pow er F-MOS FET 2SK758 2SK758 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON re sistan c e R ds on : R ds (on) = 0 .3 3 il (typ.) • High switching ra te : tf = 45ns (typ.) Unit: mm • No secondary breakdow n ■Application

2SK2324

Contextual Info: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications

Contextual Info: 2SK758 Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● High-speed switching 6.5±0.1 ● High drain-source voltage (VDSS) 4.35±0.1 1.8±0.1 2.5±0.1 5.3±0.1 3.0±0.1 0.85±0.1 Parameter Symbol Rating Unit Drain-Source breakdown voltage

Contextual Info: 2SK758 Power F-MOS FETs 2SK2790 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● ● High-speed switching 6.0±0.5 ● No secondary breakdown ■ Applications ● Motor drive 1.0±0.1 1.5max. 1.1max. 2.0 High-speed switching 10.5min. ●

Contextual Info: 2SK758 Power F-MOS FETs 2SK2323 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications

2sk758

Contextual Info: Power F-MOS FET 2SK758 2SK758 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features Unit: mm • Low ON re sistan c e R ds on : R ds (on) = 0 .3 3 il (typ.) • High sw itching ra te : tf = 45ns (typ.) • No secondary breakdow n ■Application

Contextual Info: 2SK758 Power F-MOS FETs 2SK758 Silicon N-Channel Power F-MOS Unit : mm ON-resistance RDS on : RDS(on) = 0.45Ω(typ) 16.7±0.3 • Applications ø3.1±0.1 converter ● Solenoid relay 14.0±0.5 ● Non-contact ● Motor 4.2±0.2 switching : t f = 45ns(typ)

2sk2323

Contextual Info: 2SK758 Power F-MOS FETs 2SK2323 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown 3.0±0.2 15.0±0.3 ON-resistance M Di ain sc te on na tin nc ue e/

2SK2014

Contextual Info: 2SK758 Power F-MOS FETs 2SK2014 Silicon N-Channel Power F-MOS Unit : mm • Features 6.5±0.1 5.3±0.1 secondary breakdown 4.35±0.1 1.8±0.1 2.5±0.1 3.0±0.1 ● Low-voltage ■ Applications converter ● Solenoid relay drive 0.85±0.1 1.0±0.2 ● Non-contact

2SK752

Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
Contextual Info: PART NUMBER INDEX Part Number Manufacturer 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 2SK762 2SK762A 2SK763 2SK763A 2SK764 2SK764A 2SK765 2SK765A 2SK766 2SK767 2SK768 2SK769 2SK770 2SK771 2SK772 2SK773 2SK774 2SK775 2SK776 2SK777

2SK2324

Abstract: *k2324 2SK75 2SK758
Contextual Info: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed switching ø3.2±0.1 ● Solenoid ● Motor relay drive drive ● Control equipment ● Switching 7˚

2SK2324

Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)

2sk type

Abstract: 2SK+series
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) 1Y h I ton (max.)

2SK996

Contextual Info: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46

2SK2574

Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Contextual Info: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative

OF03

Abstract: 2SK1263 2SK2377
Contextual Info: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391

2SK2324

Abstract: 220E 2SK2129 2SK76 2sk203 2SK1606 2sk2128 2SK996 2SK1036 2SK1331
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) ton RoS(on) 1Y h I

2SK2277

Abstract: 2SK2580 220E4 2SK2015 2SK2014
Contextual Info: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128

2SK752

Abstract: K762A 2SK751 2SK749 2SK750 2SK754 2SK746 2SK748 2sk758 NEC 765A
Contextual Info: - 66 - JS m s 7^ fë /Ë t! tí: « ffl & m % K 2SK744 fô T 2SK745 V * (V) * (A) m m P d/ P c h & * (W) Ig s s (max) (A) Vg s (V) W (min) (max) V d s (A) (A) (V) (Ta=25°C) 14 (min) (V) (max) Vd s (V) (V) (min) (S) Id (A) Vd s (V) Id (A) RF PA. SW MOS