2SK75 Search Results

2sk2324

Contextual Info: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown 3.0±0.2 15.0±0.3 ON-resistance M Di ain sc te on na tin nc ue e/

2SK759

Contextual Info: P o w er F-MOS FET 2SK 759 2SK759 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : RDs (on) = 0.25fi (typ.) • High switching rate : tf = 55ns (typ.) • No secondary breakdown ■ Application • • •

2SK758

Contextual Info: Pow er F-MOS FET 2SK758 2SK758 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON re sistan c e R ds on : R ds (on) = 0 .3 3 il (typ.) • High switching ra te : tf = 45ns (typ.) Unit: mm • No secondary breakdow n ■Application

2SK757

Abstract: 251C
Contextual Info: 2SK757 P o w e r F-MOS FET 2SK757 Silicon N-channel Power F-M O S FET • P ackage Dimensions ■ Features • L ow ON r e s is ta n c e R ds o n : Unit: mm (o n ) = 0 . 2 2 i l ( ty p .) R ds • H ig h s w itc h in g r a t e : t r = 6 0 n s ( t y p .)

2SK2324

Contextual Info: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications

Contextual Info: 2SK758 Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● High-speed switching 6.5±0.1 ● High drain-source voltage (VDSS) 4.35±0.1 1.8±0.1 2.5±0.1 5.3±0.1 3.0±0.1 0.85±0.1 Parameter Symbol Rating Unit Drain-Source breakdown voltage

Contextual Info: 2SK758 Power F-MOS FETs 2SK2790 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● ● High-speed switching 6.0±0.5 ● No secondary breakdown ■ Applications ● Motor drive 1.0±0.1 1.5max. 1.1max. 2.0 High-speed switching 10.5min. ●

2sk75

Abstract: FLS2
Contextual Info: Power F-MOS FET 2SK759 2SK759 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistance R ds on : RDs (on) = 0.25il (typ.) • High switching rate : tf=55ns (typ.) • No secondary breakdown Unit: mm ■ Application • DC-DC converter

Contextual Info: 2SK758 Power F-MOS FETs 2SK2323 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications

2SK755

Abstract: TCI-220 251C
Contextual Info: Power F-MOS FET 2SK755 2SK755 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS : R ds, on = 0 . 3 3 0 (ty p .) Unit: mm • High sw itch in g r a te : tf = 4 5 n s (ty p .) • N o seco n d a ry breakdow n

2sk758

Contextual Info: Power F-MOS FET 2SK758 2SK758 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features Unit: mm • Low ON re sistan c e R ds on : R ds (on) = 0 .3 3 il (typ.) • High sw itching ra te : tf = 45ns (typ.) • No secondary breakdow n ■Application

Contextual Info: 2SK758 Power F-MOS FETs 2SK758 Silicon N-Channel Power F-MOS Unit : mm ON-resistance RDS on : RDS(on) = 0.45Ω(typ) 16.7±0.3 • Applications ø3.1±0.1 converter ● Solenoid relay 14.0±0.5 ● Non-contact ● Motor 4.2±0.2 switching : t f = 45ns(typ)

2sk2323

Contextual Info: 2SK758 Power F-MOS FETs 2SK2323 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown 3.0±0.2 15.0±0.3 ON-resistance M Di ain sc te on na tin nc ue e/

2SK757

Contextual Info: Power F-MOS FET 2SK 757 2SK757 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce R ds on : R ds Unit: mm (on) = 0 .2 2 il (typ.) • High sw itching ra te : tr= 6 0 n s (typ.) • No secondary breakdow n ■ Application

2SK752

Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
Contextual Info: PART NUMBER INDEX Part Number Manufacturer 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 2SK762 2SK762A 2SK763 2SK763A 2SK764 2SK764A 2SK765 2SK765A 2SK766 2SK767 2SK768 2SK769 2SK770 2SK771 2SK772 2SK773 2SK774 2SK775 2SK776 2SK777

Contextual Info: Power F-MOS FET 2SK755 2SK755 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce Rds : Rds, Unit: mm on = 0 .3 3 0 (typ.) • High switching ra te : t f = 45ns (typ.) • No secondary breakdow n ■Application • DC-DC converter

2SK2324

Abstract: *k2324 2SK75 2SK758
Contextual Info: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed switching ø3.2±0.1 ● Solenoid ● Motor relay drive drive ● Control equipment ● Switching 7˚

IAf630

Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p

2SK2324

Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sk type

Abstract: 2SK+series
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) 1Y h I ton (max.)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SK996

Contextual Info: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.