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    2SK192 Search Results

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    2SK192 Price and Stock

    Rochester Electronics LLC 2SK1920-E

    NCH 10V DRIVE SERIES
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    DigiKey 2SK1920-E Bulk 333
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    Aptina Imaging 2SK1920-E

    Trans MOSFET N-CH Si 250V 4A 3-Pin(3+Tab) TP
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    Verical 2SK1920-E 45,254 369
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    2SK1920-E 1,500 369
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    Aptina Imaging 2SK1920-K-TL-E

    Trans MOSFET N-CH Si 250V 4A
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    Verical 2SK1920-K-TL-E 646 17
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    onsemi 2SK1920-K-TL-E

    Trans MOSFET N-CH Si 250V 4A
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    Arrow Electronics 2SK1920-K-TL-E Cut Strips 646 110 Weeks 1
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    onsemi 2SK1920-TL-E

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    Quest Components 2SK1920-TL-E 1,344
    • 1 $1.625
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    2SK192 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK192 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK192 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK192 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK192 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK192 Unknown FET Data Book Scan PDF
    2SK1920 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK1920 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK1920 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SK1921 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SK1921 Unknown Scan PDF
    2SK1921 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK1921 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF
    2SK1922 Sanyo Semiconductor N-Channel Silicon MOSFET Ultrahigh-Speed Switching Original PDF
    2SK1922 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK1922 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF
    2SK1923 Sanyo Semiconductor N-Channel Silicon MOSFET Ultrahigh-Speed Switching Original PDF
    2SK1923 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK1923 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK1923 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF
    2SK1924 Sanyo Semiconductor N-Channel Silicon MOSFET Ultrahigh-Speed Switching Original PDF

    2SK192 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1923 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.75 Minimum Operating Temp (øC)-55


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    PDF 2SK1923

    2SK1920

    Abstract: No abstract text available
    Text: Ordering number:EN4244A N-Channel Silicon MOSFET 2SK1920 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1920] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2


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    PDF EN4244A 2SK1920 2083B 2SK1920] 2092B 2SK1920

    2SK1923

    Abstract: No abstract text available
    Text: Ordering number:EN4312 N-Channel Silicon MOSFET 2SK1923 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode trr=120ns . unit:mm 2052C [2SK1923] 10.2 3.6 4.5 5.1 18.0 15.1


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    PDF EN4312 2SK1923 120ns) 2052C 2SK1923] O-220AB 2SK1923

    2SK1920

    Abstract: ITR02236 ITR02237 ITR02238 ITR02239 ITR02240 ITR02242
    Text: 注文コード No. N 4 2 4 4 A 2SK1920 No. N 4 2 4 4 A 70999 開発ニューズ No. ※ 4244 とさしかえてください。 2SK1920 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。


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    PDF 2SK1920 2083B ITR02242 ITR02241 ITR02240 ITR02243 ITR02244 ITR02245 2SK1920 ITR02236 ITR02237 ITR02238 ITR02239 ITR02240 ITR02242

    EN4310

    Abstract: AX-9832 2SK1921
    Text: Ordering number:EN4310 N-Channel Silicon MOSFET 2SK1921 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2052C [2SK1921] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7


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    PDF EN4310 2SK1921 2052C 2SK1921] O-220AB EN4310 AX-9832 2SK1921

    2SK1928

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance


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    PDF 2SK1928 ij100A/MS 2SK1928

    Untitled

    Abstract: No abstract text available
    Text: 2SK1920 AP Advanced Performance Series 20 83 A VDss —2 5 0 V 2092A N Channel Power M O S F E T F e a tu r e s • Low ON re sista n c e . • V ery high-sp eed sw itch in g . • Low -voltage d riv e. A b s o lu te M a x im u m R a tin g s a t T a = 25°C


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    PDF 2SK1920

    AX-9832

    Abstract: No abstract text available
    Text: 2SK1921 AP A d va n ce d P e rfo rm a n c e Series V d 5s = 2 5 0 V N Channel Power M OSFET 4310 F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. bsolute M axim um R atings atTa=25°C Drain to Source Voltage V d ss


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    PDF 2SK1921 51193TH AX-9832

    K192a

    Abstract: No abstract text available
    Text: T O SH IB A 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure : NF=1.8dB (Typ.) (f=100MHz)


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    PDF 2SK192A 100MHz) 100MHz K192a

    2052B

    Abstract: en43-1 EN4310 2SK192
    Text: Ordering num ber:E N 4310 2SK192Í No.4310 N-Channel MOS Silicon FET SA ÍYO i Very High-Speed Switching Applications F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings a tT a = 25°C Drain-to-Source Voltage


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    PDF EN4310 2SK192Ã 2052B en43-1 EN4310 2SK192

    2SK192A

    Abstract: 2sk192
    Text: 2SK192A TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K1 9 2A FM TUNER APPLICATIONS Unit in mm VHF BAND AMPLIFIER APPLICATIONS 4.2MAX. • High Power Gain : Gpg = 24dB Typ. (f = 100 MHz) • Low Noise Figure : NF = 1.8dB (Typ.) (f = 100 MHz)


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    PDF 2SK192A 2SK192A 2sk192

    2092A

    Abstract: 250VI 4244A 2092A* High Speed 2SK192 2SK1920 2A1216
    Text: Ordering number : EN4 2 4 4 A 2SK1920 N o.4244A N -Channel M O S Silicon F E T SAXYO Very High-Speed Switching Applications i F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M axim u m R a t in g s a t T a = 25°C


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    PDF EN4244A 2SK192Ã 2092A 250VI 4244A 2092A* High Speed 2SK192 2SK1920 2A1216

    2SK192

    Abstract: No abstract text available
    Text: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K19 2A FM TUNER APPLICATIONS Unit in mm VHF BAND AM PLIFIER APPLICATIONS 4.2 M AX. • High Power Gain : GPs = 24dB Typ. (f= 100MHz) • Low Noise Figure : N F= 1.8dB (Typ.) (f= 100MHz)


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    PDF 2SK192A 100MHz) 55MAX. 2SK192

    Untitled

    Abstract: No abstract text available
    Text: 2SK1925 2056 AP A d va n ce d P e rfo rm a n c e Series V dss = 6 0 0 V IM Channel Power MOSFET 43 U F e a tu r e s • Low ON resistance. • Very high-speed sw itching. •H igh-speed diode (trr= 150ns). b s o lu te M axim u m R a tin g s a tT a = 25°C


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    PDF 2SK1925 150ns) X-9260

    C085

    Abstract: No abstract text available
    Text: 2SK1923 AP A d va n ce d P e rfo rm a n c e Series 2052B DSS = 6 0 0 V N Channel Power M OSFET £4312 F e a tu re s • Low ON resistance. • Very high-speed switching. • H igh-speed diode (trr = 120ns).


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    PDF 2SK1923 2052B 120ns) VQQ-200V TCl-220AB 42693TH AX-9260 C085

    2SK1925

    Abstract: No abstract text available
    Text: Ordering n u m b er: EN4 3 1 4 2SK1925 No.4314 N-Channel MOS Silicon FjET SAXYO Very High-Speed Switching Applications 1 Features • Low ON resistance. • Very high-speed switching. • High-speed diode trr = 150ns . bsolute Maximum Ratings at Ta = 25°C


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    PDF EN4314 2SK1925 150ns)

    2SK1929

    Abstract: No abstract text available
    Text: T O SH IB A ‘ÌD 'ÌT S S G T O S H IB A FIELD EFFECT T R A N S IS T O R GD233S3 2SK1929 7DT SILIC O N N C H A N N E L M O S T Y P E tt- M O S II .5 2 S K 1 929 HIGH S PEED , H IG H C U R R EN T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E


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    PDF GGS33S3 2SK1929 300//A O-220FL 20kfi) O-22QAB O-220 50URCE

    2052B

    Abstract: 2SK1923 24n700
    Text: Ordering num ber: E N 4 3 1 2 * 2SK1923 No.4312 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s •Low ON resistance. • Very high-speed switching. • High-speed diode trr = 120ns . b so lu te M aximum R atings a tT a = 25°C


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    PDF 2SK1923 120ns) 2052B 2SK1923 24n700

    2sk192

    Abstract: 2SK192A BL 2SK192A
    Text: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A FM TUNER APPLICATIONS U nit in mm VHF BAND AM PLIFIER APPLICATIONS 4.2M AX. • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure : NF = 1.8dB (Typ.) (f= 100MHz)


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    PDF 2SK192A 100MHz) 55MAX. 100MHz 2sk192 2SK192A BL 2SK192A

    2SK241 Equivalent FET

    Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
    Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo


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    PDF OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf

    2092A

    Abstract: No abstract text available
    Text: 2SK1920 A P Advanced Perform ance Series 2083A 2092A V dss = 250V N Channel Power MOSFET 4244A F e a tu r e s •Low ON resistance. • Very high-speed sw itching. • Low-voltage drive. A b so lu te M axim u m R a tin g s a tT a = 25°C Drain to Source V oltage


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    PDF 2SK1920 10/iS, 2092A

    Untitled

    Abstract: No abstract text available
    Text: 2SK1925 AP A d v a n c e d P e rfo rm a n c e Series V dss = 6 0 0 V N Channel Power M OSFET 'I >4314 F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode ( tr r = 150ns). A b so lu te M axim um R a tin g s a tT a = 25°C


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    PDF 2SK1925 150ns) 2SK1925 50793TI-I AX-9260

    buz90af

    Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
    Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391


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    PDF 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 OT103 BF996 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1928 Field Effect Transistor Silicon N Channel MOSType itMOS II High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' ^DS(ON) = 0.7Q (Typ.) • High Forward Transfer Admittance - lYfSl= 10S (Typ.)


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    PDF 2SK1928 0021fc