2SK210 Search Results

2SK210 Result Highlights (4)

Part	Manufacturer	Description
2SK2109-AZ	Renesas Electronics Corporation	Power MOSFETs for Automotive
2SK2109-T2-AZ	Renesas Electronics Corporation	Power MOSFETs for Automotive
2SK2109-T1-AZ	Renesas Electronics Corporation	Power MOSFETs for Automotive
2SK2109(0)-T1-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive

2SK210 Price and Stock

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ROHM Semiconductor 2SK2103T100 MOSFET N-CH 30V 2A MPT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK2103T100	Digi-Reel	1,746		1	1 $1.15 10 $0.723 100 $1.15 1000 $0.36832 10000 $0.36832	Buy Now
	2SK2103T100	Cut Tape	1,746		1	1 $1.15 10 $0.723 100 $1.15 1000 $0.36832 10000 $0.36832	Buy Now
	2SK2103T100	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.33394 10000 $0.25435	Buy Now
Mouser Electronics	2SK2103T100					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SK2103T100		2,892			1 $0.9 10 $0.9 100 $0.9 1000 $0.36 10000 $0.315	Buy Now
ComSIT USA	2SK2103T100		2,030			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC 2SK2109-T1-AZ 2SK2109-T1-AZ - N-CHANNEL MOS FE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK2109-T1-AZ	Bulk			780	1 - 10 - 100 - 1000 $0.38 10000 $0.38	Buy Now
Renesas Electronics Corporation 2SK2109-T1-AZ N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK2109-T1-AZ		6,956		902	1 - 10 - 100 - 1000 $0.393 10000 $0.393	Buy Now
Rochester Electronics	2SK2109-T1-AZ		6,956		1	1 $0.3699 10 $0.3699 100 $0.3477 1000 $0.3144 10000 $0.3144	Buy Now
Others 2SK2101
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK2101		180			1 $4.2 10 $2.1 100 $1.96 1000 $1.96 10000 $1.96	Buy Now
ROHM Semiconductor 2SK2103 SMALL SWITCHING (30V, 2A) TRANSISTOR Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK2103		5,400			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK210 Datasheets (56)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK210	Toshiba	N-Channel MOSFET	Original	PDF
2SK210	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK210	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SK210	Unknown	FET Data Book	Scan	PDF
2SK210	Unknown		Scan	PDF
2SK210	Toshiba	Field Effect Transistor Silicon N Channel Junction Type	Scan	PDF
2SK210	Toshiba	SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO	Scan	PDF
2SK210	Toshiba	Silicon N channel field effect transistor for FM tuner applications and VHF band amplifier applications	Scan	PDF
2SK210	Toshiba	Junction FETs / MOSFET / Transistors	Scan	PDF
2SK2100-01MR	Fuji Electric	Power MOSFET	Scan	PDF
2SK2101-01MR	Fuji Electric	N-channel MOS-FET	Original	PDF
2SK2101-01MR	Fuji Electric	N-channel MOS-FET	Original	PDF
2SK2102	ROHM	Silicon N-Channel MOSFET	Scan	PDF
2SK2103	ROHM	Small switching (30V, 2A)	Original	PDF

2SK2103	ROHM	Power MOSFETs	Scan	PDF
2SK2103T100	ROHM	TRANS MOSFET N-CH 30V 2A 3SC-62 T/R	Original	PDF
2SK2103T100	ROHM	Small Switching (30 V, 2 A)	Original	PDF
2SK2104	ROHM	Power MOSFET	Scan	PDF
2SK2104	ROHM	Power MOSFET	Scan	PDF
2SK2104	ROHM	Silicon N-Channel MOS FET	Scan	PDF

2SK210 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DSA007622 Abstract: No abstract text available Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: \|Yfs\| = 7 mS (typ.) (f = 1 kHz)	Original	PDF	2SK210 SC-59 DSA007622
2SK2101-01MR Abstract: No abstract text available Text: 2SK2101-01MR N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators	Original	PDF	2SK2101-01MR 2SK2101-01MR
2SK245 Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240 Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H	Original	PDF	2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
2SK210 Abstract: No abstract text available Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: \|Yfs\| = 7 mS (typ.) (f = 1 kHz)	Original	PDF	2SK210 SC-59 2SK210
2SK210 Abstract: No abstract text available Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: \|Yfs\| = 7 mS (typ.) (f = 1 kHz)	Original	PDF	2SK210 2SK210
mosfet Abstract: parallel mosfet 2SK2103 Text: Transistors Small switching 30V, 2A 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel	Original	PDF	2SK2103 mosfet parallel mosfet 2SK2103
2SK210 Abstract: 2SK2104 2SK2105 Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: \|Yfs\| = 7 mS (typ.) (f = 1 kHz)	Original	PDF	2SK210 2SK210 2SK2104 2SK2105
2SK2109 Abstract: 2SK210 Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2109 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 Features +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 RDS on =1.0 MAX.@VGS=4.0V,ID=0.3A +0.1 4.00-0.1 Low on-resistance High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1	Original	PDF	2SK2109 OT-89 2SK2109 2SK210
2SK2101 Abstract: 2SK2101-01MR Text: 2SK2101-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications 2.54	Original	PDF	2SK2101-01MR O-220F15 SC-67 2SK2101 2SK2101-01MR
2SK2103 Abstract: No abstract text available Text: Transistors Small switching 30V, 2A 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel	Original	PDF	2SK2103 2SK2103
Untitled Abstract: No abstract text available Text: 2SK2101-01M N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators	Original	PDF	2SK2101-01M
2SK2108 Abstract: No abstract text available Text: Ordering number:ENN4602A N-Channel Silicon MOSFET 2SK2108 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A	Original	PDF	ENN4602A 2SK2108 2SK2108] O-220ML 2SK2108
2SK2100 Abstract: 600V 2A MOSFET N-channel 3,3 Text: 2SK2100-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications 2.54	Original	PDF	2SK2100-01MR O-220F15 SC-67 2SK2100 600V 2A MOSFET N-channel 3,3
2SK2101-01MR Abstract: No abstract text available Text: 2SK2101-01MR N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators	Original	PDF	2SK2101-01MR 2SK2101-01MR

2SK210 Abstract: No abstract text available Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: \|Yfs\| = 7 mS (typ.) (f = 1 kHz)	Original	PDF	2SK210 2SK210
2SK210 Abstract: No abstract text available Text: SILICON N CHANNEL JUNCTION TYPE 2SK210 U nit in mm FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. + Ü5 2 .5 -0 1 3 + Û2 5 1 .5 - t t 1 5 • High Power Gain : G ps = 24dB Typ. (f= 100MHz) • Low Noise Figure : N F= 1.8dB (Typ.) (f= 100MHz) •	OCR Scan	PDF	2SK210 100MHz) SC-59 2SK210
2SK210 Abstract: marking ADMI Text: 2SK210 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 -0 .3 + 0 .2 5 1 .5 - Q l 5 • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure	OCR Scan	PDF	2SK210 100MHz) SC-59 100MHz 200i----- 2SK210 marking ADMI
2SK210 Abstract: RS1N Text: 2SK210 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS • • • + 0.5 2 .5 -0.3 + 0.25 1.5-0.15 High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure	OCR Scan	PDF	2SK210 100MHz) SC-59 2SK210 RS1N
jft 1411 Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr Text: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * ;U « É M O S F E T ? U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o	OCR Scan	PDF	2SK2109 2SK2109 TC-7983A 484Sife jft 1411 c947 100 N31 transistor mur 641 M 9619 transistor 9619 nec 7824 ki 30 if 35acr
2SK210 Abstract: No abstract text available Text: 2SK210 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS • • • + 0.5 2 .5 -0.3 + 0.25 1.5-0.15 High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure	OCR Scan	PDF	2SK210 100MHz) SC-59 2SK210
2SK2102 Abstract: No abstract text available Text: TOSHIBA 2SK210 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K SILICON N CHANNEL JUNCTION TYPE 2 1 Q FM TUNER APPLICATIONS. VHF BAND AM PLIFIER APPLICATIONS. High Power Gain : GPs = 24dB Typ. (f=100M H z) • Low Noise Figure : NF = 1.8dB (Typ.) (f=lOOMHz) • High Forward Transfer Admitance :	OCR Scan	PDF	2SK210 2SK2102
2SK2108 Abstract: No abstract text available Text: Ordering number: EN4602A _ 2SK2108 NO.4602A N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating m ounting. A b s o lu te M ax im u m R a tin g s at Ta = 25°C	OCR Scan	PDF	EN4602A 2SK2108
2SK210 Abstract: No abstract text available Text: 2SK210 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS SILICON N CHANN EL JUNCTION TYPE 2SK210 • H igh Power G ain : G p g = 24dB Typ. (f= 100M H z) • Low N oise Figure : N F = 1.8dB (Typ.) (f = 100MHz)	OCR Scan	PDF	2SK210 100MHz) SC-59 UNIT25Â 100MHz
2SK2103 Abstract: No abstract text available Text: 2SK2103 Silicon N-channel MOSFET Features Dimensions Units : mm available in MPT3 (MPT, SOT89, SC-62) package 2SK2103 (MPT3) ♦0.2 4 .5 _ o . i low on-resistance 1 .6 * 0 1 Ö ïî wide SOA (Safe Operating Area) 1 m fast switching speed ! ! «vi ! i ! '	OCR Scan	PDF	2SK2103 SC-62) 2SK2103

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2SK210 Search Results

2SK210 Result Highlights (4)

2SK210 Price and Stock

ROHM Semiconductor 2SK2103T100

Rochester Electronics LLC 2SK2109-T1-AZ

Renesas Electronics Corporation 2SK2109-T1-AZ

Others 2SK2101

ROHM Semiconductor 2SK2103

2SK210 Datasheets (56)

2SK210 Datasheets Context Search

DSA007622

2SK2101-01MR

2SK245

2SK210

2SK210

mosfet

2SK210

2SK2109

2SK2101

2SK2103

Untitled

2SK2108

2SK2100

2SK2101-01MR

2SK210

2SK210

2SK210

2SK210

jft 1411

2SK210

2SK2102

2SK2108

2SK210

2SK2103