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    Diotec Semiconductor AG SA265

    DIODE GEN PURP 2000V 2A MELF
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    DigiKey SA265 Digi-Reel 3,328 1
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    Mouser Electronics SA265 8,462
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    SA265 4,095 415
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    Onlinecomponents.com SA265
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    Cyrstal IS SA265-35030-SA1

    260 - 270 NM, >30MW OUTPUT POWER
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    DigiKey SA265-35030-SA1 Cut Tape 2,067 1
    • 1 $7.72
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    SA265-35030-SA1 Digi-Reel 2,067 1
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    SA265-35030-SA1 Reel 1,000
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    TE Connectivity CSA265N00450001000

    CONN PLG HSG FMALE 9POS INLINE
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    DigiKey CSA265N00450001000 Box 23 1
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    Interstate Connecting Components CSA265N00450001000
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    TE Connectivity 1SSA265202R1100

    L26520211000
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    Mouser Electronics 1SSA265202R1100
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    Newark 1SSA265202R1100 Bulk 100
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    TE Connectivity 1SSA265203R1100

    L26520311000
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    Mouser Electronics 1SSA265203R1100
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    Newark 1SSA265203R1100 Bulk 100
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    SA265 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SA265 Semikron Fast Silicon Rectifier Diodes Original PDF

    SA265 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SA265

    Abstract: SA264 DO-213AB SA261 SA262 SA263
    Text: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2005-06-21 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.5 50.1000 V


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    PDF SA261 SA265 DO-213AB UL94V-0 SA265 SA264 DO-213AB SA261 SA262 SA263

    Untitled

    Abstract: No abstract text available
    Text: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2005-10-17 2A 0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung 1200.2000 V Plastic case MELF Kunststoffgehäuse MELF


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    PDF SA261 SA265 DO-213AB UL94V-0

    DO-213AB

    Abstract: SA261 SA262 SA263 SA264 SA265
    Text: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Silicon Rectifier Diodes Schnelle Silizium-Gleichrichter für die Oberflächenmontage Version 2010-04-13 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original
    PDF SA261 SA265 DO-213AB UL94V-0 DO-213AB SA261 SA262 SA263 SA264 SA265

    Untitled

    Abstract: No abstract text available
    Text: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Silicon Rectifier Diodes Schnelle Silizium-Gleichrichter für die Oberflächenmontage Version 2012-04-02 Nominal current – Nennstrom 2A 2.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original
    PDF SA261 SA265 DO-213AB UL94V-0 SA261 SA262 SA263 SA264

    DO-213AB

    Abstract: SA261 SA262 SA263 SA264 SA265
    Text: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2008-04-08 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.5 50.1000 V


    Original
    PDF SA261 SA265 DO-213AB UL94V-0 DO-213AB SA261 SA262 SA263 SA264 SA265

    SA265

    Abstract: No abstract text available
    Text: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2010-04-13 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.5 1200.2000 V


    Original
    PDF SA261 SA265 DO-213AB UL94V-0 SA261 SA262 SA263 SA264 SA265

    Untitled

    Abstract: No abstract text available
    Text: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2005-06-29 2A 0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung 1200.2000 V Plastic case MELF Kunststoffgehäuse MELF


    Original
    PDF SA261 SA265 DO-213AB UL94V-0

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    PDF Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G

    AM29DL640H

    Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original
    PDF Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original
    PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


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    PDF W78M32V-XBX 8Mx32 120ns 13x22mm

    TSOP-20 FOOTPRINT

    Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original
    PDF S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL

    10001000XXX

    Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
    Text: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


    Original
    PDF W78M32V-XBX 8Mx32 120ns 13x22mm 10001000XXX PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166

    10001XXXXX

    Abstract: No abstract text available
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original
    PDF S29PL-J 16-Bit) S29PL-J 10001XXXXX

    Untitled

    Abstract: No abstract text available
    Text: SA2654 SA2654 Serial Controlled 75W Digital Step Attenuator 5MHz to 2000MHz, 6Bit, 0.5dB LSB SERIAL CONTROLLED 75DIGITAL STEP ATTENUATOR 5MHz TO 2000MHz, 6-BIT, 0.5dB High Linearity, IIP3 >50dBm  3V and 5V Logic Compatible  Serial-to-Parallel Controller


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    PDF RFSA2654 2000MHz, 24-Pin, DS120627

    Green Wave STEP 1500

    Abstract: RFSA2654TR13 RFSA2654SR sa2654
    Text: SA2654 SA2654 Serial Controlled 75W Digital Step Attenuator 5MHz to 2000MHz, 6Bit, 0.5dB LSB SERIAL CONTROLLED 75DIGITAL STEP ATTENUATOR 5MHz TO 2000MHz, 6-BIT, 0.5dB RF1 4 15 RF2 14 GND 13 GND GND 6  Serial Programming Interface  Power-up Programming Modes


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    PDF RFSA2654 2000MHz, RFSA2654 75DIGITAL 24-Pin, 2000MHz 50dBm DS121031 Green Wave STEP 1500 RFSA2654TR13 RFSA2654SR sa2654

    Untitled

    Abstract: No abstract text available
    Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V


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    PDF S71WSxxxJ 16-bit) 66MHz S71WS S71WS256/128/064J

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11

    SGA23

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


    Original
    PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    HPPB

    Abstract: DS05 FPT-56P-M01 MBM29QM12DH MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97
    Text: MBM29QM12DH -60 データシート 生産終息品 MBM29QM12DH -60 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及 び履歴目的でのみご利用願います。


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    PDF MBM29QM12DH MBM29QM12DH DS05-20909-2 DS05-20909-2 HPPB DS05 FPT-56P-M01 MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97

    S29WS128J-MCP

    Abstract: S29WS128J S29WS-J S29WS064J
    Text: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original
    PDF S29WS-J 16-Bit) S29WS-J S29WS128J-MCP S29WS128J S29WS064J

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original
    PDF Am29LV2562M 120R C8800