CEF3 Search Results

CEP35P10

Contextual Info: CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS ON =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

Magnetic Shielding Sheet

Abstract: em 18 rfid
Contextual Info: 3M EMI/EMC Electronic Materials Solutions for Today’s Electronics • EMI Shielding Tapes • EMI Grounding Adhesives and Gaskets • EMI Absorbers • Flux Field Directional Materials • NFC, Wireless Power, Magnetic Shielding Materials Easy-to-use shielding, absorbing, grounding

LT3973-3.3

Abstract: D3396 e963 3n02 LT3971-3.3
Contextual Info: 123455678 5E 123456789A6BC3DEF7989A63A38E3 E339F3B63569EFBC3F8E3A63 D39E3!A5CE3A39"3#9"86EFF3 D3B63 $ 

LT3973-3.3

Abstract: 83968E6F98-39F3 LT3971-3.3
Contextual Info: 12345566789 ABCDEFCECBEBBE5FCDEF 123456789A6BC3DEF7989A63A38E31 E3139F3B3569EFBC393AC8BE3D3 9E3!"23A83#57$3B6 3#AAF838AACA9EF3 BE3AFF9#CE23!83BF3A6E375E683E5CB8E 37B66EC23 E3137A68ACF3B63E%8E6BC3&'43B839%E 3F 987963E 5E679EF3538A3

Contextual Info: 123452676 89ABCDEFEED598 123456789A6BC3DEF7989A63A38E311 E31139F3B3FE6FA33A3965789E3A9 98!3BC97B89A6F3B637B63"E35FE3#983B3 

Contextual Info: KEMET Part Number: T491D336K035ZT B45196H6336K409 Capacitor, tantalum, 33 uF, 7343, +/-10% Tol, 35V@85C General Information + Bottom View Top View Pola rity F Ind ic a tor Kem et m a y c onstruc t a term ina l slot on the p ositive sid e a t Kem ets Op tion

Contextual Info: 123455678 9ABCDEFFF5FCF2D 123456789A6BC3DEF7989A6 E339F3B3B9C3A3F8E3A   

N-371

Abstract: B631E
Contextual Info: 123452678 9ABBACDEFDBBEE2DABEABE5AC 123456789A6BC3DEF7989A63A38E3 E339F3B3BCCBF837A68ACCE33A3 E8BC3BC9!E3CB F3"#D$3D$3#%&2383 E8BC3BC9!E3CB F3967C5!96'3A E3B78A3

Contextual Info: 123456787  123456789A6BC3DEF7989A6 E339F3B3EB85E3973A3A D9"98BC3A8A3A68AC3$6"96E3 %D$&3'A E34B78A3AE789A63%'4&39"3CE EC3F F8E#37A68AC3

3566E

Abstract: 37a65
Contextual Info: 123456778 94ABCDEFABCDEF1BB5DF2 ! 123456789A6BC3DEF7989A63A38E3 E339F359C833589C996 9EF38A3 + E3

TDB6HK180N16RR

Abstract: 6a65
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3

FZT958

Abstract: FZT857 FZT957 DSA003719
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT I ISSUE 3- JANUARY I 1996 FEATURES * FZT957 FZT958 I HIGH PERFORMANCE TRANSISTORS r 1 Amp continuous * Up to 2 Amps * Very * Excelient current c peak current low saturation voltage gain characteristics specified up to 1 Amp

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * V C E O = -*0 V * 3 A m p C o n tin u o u s C u rre n t * 5 A m p P ulse C u rr e n t * * Low Saturation voltage High Gain ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL

89A63A

Contextual Info: 123456787  123456789A6BC3DEF7989A6 E 33 9F3B389E33983B3B8E3 9!E3A58583"A3#$4%F23E389E39F3FE83&'3B 3 EA37AFF963 E8E78A3B6 

Contextual Info: 123456789 6ABCDEF5CBD 123456789A6BC3DEF7989A63A38E3 E339F3B35CC3968EB8E 3A897BC3E7E9!E3A3"A83A897BC3F#9873B6 3 B8B3 8B6F$9FF9A63BC97B89A6F23%8&F3B63968EB8E 3C983"B9E3E7E9!E'8B6F$988E3A68E6 3% 38A3"E3

Contextual Info: 123456778 19ABCDEFEAEEE5CFADE541 123456789A6BC3DEF7989A6 E 33 BF 3 A8 3 7B66EC 3 B6 3 7B66EC 3 A5858 3 9EF 3 B 3 57! 3 B6 3 C96EB3 E"5CB8A 3 B6 3 8#A 3 $F2 3 %8 3 9F 3 9"C& 3 F598BCE 3 BF 3 B 3 F5C& 3 B6 3 A5858 3 F8B"E 3 'A 3 B6&3

62A21

Abstract: 3HD23 E78E
Contextual Info: 123456789  123456789A6BC3DEF7989A6 E339F3B3EB85E3973A 3967C5"96#33 D9#98BC3A8A3A68AC3%6#96E3 &D%' 3 A E34B78A3AE789A63&(4' 39#3CE!EC3F*F8E$37A68AC3

Contextual Info: 1234556678 9ABCDAEFC42A5A5ACA 123456789A6BC3DEF7989A63A38E3 E33BE39AC8BE3D3 9E37A68AC3!"3#983$59C8963%&43F#9873B6 33 968E6 E