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Vox Power Ltd NEVO-600S-8835-DK000 AC/DC CONVERTER 5X24V 12V 450W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NEVO-600S-8835-DK000	Box			15	1 - 10 - 100 $430.21133 1000 $430.21133 10000 $430.21133	Buy Now
TE Connectivity HEX40-AB-90-11-A2-1CS8835 CONN BACKSHELL ADPT SZ11 B M15
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HEX40-AB-90-11-A2-1CS8835	Bulk			25	1 - 10 - 100 $266.4044 1000 $266.4044 10000 $266.4044	Buy Now
Mouser Electronics	HEX40-AB-90-11-A2-1CS8835					1 - 10 - 100 $271.14 1000 $271.14 10000 $271.14	Get Quote
National Semiconductor Corporation DS8835N
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Bristol Electronics	DS8835N		15			1 - 10 - 100 - 1000 - 10000 -	Get Quote
National Semiconductor Corporation DS8835M
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Bristol Electronics	DS8835M		8			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TE Connectivity HEX40-AB-90-15-A5-C-CS8835 MOQ Reduction
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	HEX40-AB-90-15-A5-C-CS8835					1 $1040.03 10 $329.34 100 $329.34 1000 $329.34 10000 $329.34	Buy Now
Sager	HEX40-AB-90-15-A5-C-CS8835					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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S8835 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
S8835		Toshiba	MICROWAVE POWER GaAs FET		Scan	PDF

S8835 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
S8835 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P1dB = 24 dBm at f = 8 GHz • High gain - G1dB = 8 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	Original	PDF	S8835 S8835 JS8911-AS
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	PDF	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
7400A Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16 Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions	Original	PDF
RFM70U12D Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919 Text: 東芝半導体製品総覧表 2009 年 7 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ高周波ダイオード小信号 MMIC 高周波セルパック	Original	PDF	SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
MT4S300T Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors	Original	PDF	2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
MT3S111P Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287	Original	PDF	2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
TGI8596-50 Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4	Original	PDF	MSE-2008 MSE-2009 TGI8596-50 TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
2sc5066 Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs	Original	PDF	SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
RFM70U12D Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403 Text: 東芝半導体製品総覧表 2010 年 1 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ高周波ダイオード小信号 MMIC 高周波セルパック	Original	PDF	SCJ0004O 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 RFM70U12D 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
TGI7785-120L Abstract: TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50 Text: 東芝半導体製品総覧表 2011 年 1 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波ダイオード小信号 MMIC 高周波セルパックマイクロ波半導体	Original	PDF	SCJ0004R 2SC2714 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 MT3S03A MT3S04A MT3S106 TGI7785-120L TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50
S3V 09 Abstract: S3V 03 Text: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P idB = 24 dBm at f = 8 GHz • High gain - G idB = 8 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	S8835 JS8911-AS S3V 09 S3V 03
JS8834-AS Abstract: No abstract text available Text: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 S8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36	OCR Scan	PDF	S8834 JS8834-AS S8835 JS8835-AS S8836A S8836B JS8836A-AS S8837A JS8837A-AS S8838A
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P 1dB = 24 dBm at f = 8 GHz • High gain - G-,dB = 8 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	S8835 D02S177 JS8911-AS
S8835 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8835 TECHNICAL DATA FEATURES: • HIGH POWER P^B = 24 dBm at f = 8 GHz ■ HIGH GAIN G-jjb = 8 dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	S8835 S8835

flip-flop 948 Abstract: 5252 f 1101 SN74AS8840 CNTR11-CNTR8 Zeus Component AS8832 Text: SN74AS8840. Digital Crossbar Switch • High-speed programmable switch for parallel processing applications • Dynam ically reconfigurable for fault-tolerant routing • 64 bidirectional data I/O s in 16 nibble four-bit groups • D ata I/O selection programmable by nibble	OCR Scan	PDF	SN74AS8840. SN74AS8840 can14) flip-flop 948 5252 f 1101 CNTR11-CNTR8 Zeus Component AS8832
Untitled Abstract: No abstract text available Text: S8835 16-Bit Microsequencer • 16-bit address bus accesses up to 64K of control store • Expandable to any multiple o f 16 bits • Com patible with 'AS890 architecture and instruction set • 65-word stack depth • 20'bit stack width for storage o f status bits	OCR Scan	PDF	SN74AS8835 16-Bit AS890 65-word