D02S177 Search Results
D02S177 Price and Stock
Samtec Inc IDSD-02-S-17.73 |
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IDSD-02-S-17.73 |
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D02S177 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P 1dB = 24 dBm at f = 8 GHz • High gain - G-,dB = 8 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C) |
OCR Scan |
S8835 D02S177 JS8911-AS |