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    circle surround 2 IC

    Abstract: Using Linvill Techniques LS12 MAX2320 MAX2720 MAX2721 SS11 app abstract
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,


    Original     		PDF com/an1851 MAX2320: MAX2720: MAX2721: AN1851, APP1851, Appnote1851, circle surround 2 IC Using Linvill Techniques LS12 MAX2320 MAX2720 MAX2721 SS11 app abstract

    matching with smith chart

    Abstract: AN-1852 chart AN1852 APP1852 MAX2320 MAX2720 MAX2721 lna 30MHz to 2214
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1852 Low-Noise Amplifier Stability Concept to Practical Considerations,


    Original     		PDF com/an1852 MAX2320: MAX2720: MAX2721: AN1852, APP1852, Appnote1852, matching with smith chart AN-1852 chart AN1852 APP1852 MAX2320 MAX2720 MAX2721 lna 30MHz to 2214

    2n3478

    Abstract: RF Transistor s-parameter
    Text: Test & Measurement Application Note 95-1 H S-Parameter Techniques for Faster, More Accurate Network Design http://www.hp.com/go/tmappnotes H Contents 1. Foreword and Introduction 2. Two-Port Network Theory 3. Using S-Parameters 4. Network Calculations with Scattering Parameters


    Original     		PDF

    ND12D230CG

    Abstract: 5060 transistor ND12 ND12D ND12D110CG Polyamid 12 ND12D230
    Text: Two hand safety Modules ND12D • • • • • • • • • • • Safety Category III C according to EN 574 Safety Category 4 according to EN 954-1 2 NO safety outputs 1 PNP auxiliary output 1 NC relay auxiliary output Dual channel input Max delay between input 500 ms


    Original     		PDF ND12D ND12D110CG, ND12D230CG S11-S12-S22 S21-S12-S22 ND12D230CG 5060 transistor ND12 ND12D ND12D110CG Polyamid 12 ND12D230

    Untitled

    Abstract: No abstract text available
    Text: Two hand safety Modules ND12D • Safety Category 4, Performance Level e according to EN13849-1 • Safety Category III C according to EN 574 • Safety Category 4 according to EN 954-1 • 2 NO safety outputs • 1 PNP auxiliary output • 1 NC relay auxiliary output


    Original     		PDF ND12D EN13849-1 ND12D110CG, ND12D230CG S11-S12-S22 S21-S12-S22

    130-082

    Abstract: Transistor LM 7812 NEC 7812 34018 2052-1215 NEc hemt CS 5609 NE34018 equivalent transistor NEC 7812 IC LM 7812
    Text: California Eastern Laboratories AN1022 APPLICATION NOTE Designing Low Noise Amplifiers for PCS Application ABSTRACT DEVICE CHOICE AND CHARACTERISTIC This application note will review the process by which microwave amplifier designers choose their designs based


    Original     		PDF AN1022 130-082 Transistor LM 7812 NEC 7812 34018 2052-1215 NEc hemt CS 5609 NE34018 equivalent transistor NEC 7812 IC LM 7812

    transistor s11 s12 s21 s22

    Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21

    transistor C4

    Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier
    Text: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;


    Original     		PDF BFR740L3RH 11b/g BFP620 AN173) transistor C4 Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier

    740F-080930

    Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
    Text: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740F 11b/g BFP620 AN171) 740F-080930 michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note LQP10A MTA-100 Miteq SMC-02 AN17-1

    uln 2008

    Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A
    Text: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740 uln 2008 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A

    k 513

    Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
    Text: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF AN179 BFP620 BFP640F AN182 k 513 MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179

    uln 2008

    Abstract: 825000 BFP740F Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types
    Text: Application Note, Rev. 1.2, November 2008 Application Note No. 168 BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 microsecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740F uln 2008 825000 Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types

    free transistor

    Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
    Text: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package


    Original     		PDF BFR740L3RH free transistor uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100

    RF transistors with s-parameters

    Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave

    130-082

    Abstract: IC TB 1237 AN NEC 7812 amplifier simulation circuit C band FET transistor s-parameters s2p n34018h AN1022 CS 5609 transistor NEC 7812 IC LM 7812
    Text: California Eastern Laboratories AN1022 APPLICATION NOTE Designing Low Noise Amplifiers for PCS Application ABSTRACT DEVICE CHOICE AND CHARACTERISTIC This application note will review the process by which microwave amplifier designers choose their designs based


    Original     		PDF AN1022 24-Hour 130-082 IC TB 1237 AN NEC 7812 amplifier simulation circuit C band FET transistor s-parameters s2p n34018h AN1022 CS 5609 transistor NEC 7812 IC LM 7812

    APP1851

    Abstract: LS12 MAX2320 SS11 s11s
    Text: Maxim > App Notes > Wireless and RF Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,


    Original     		PDF MAX2320: com/an1851 AN1851, APP1851, Appnote1851, APP1851 LS12 MAX2320 SS11 s11s

    nec 2501 LD 932

    Abstract: nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r U HF. PACKAGE DRAW INGS (U n it: m m) FEATURES 2.1 ± 0.1


    OCR Scan     		PDF uPA804T 2SC4571 2SC4571) nec 2501 LD 932 nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD

    NE72089A

    Abstract: NE720 MB427 ne72089 NE72000 2SK354A RN50
    Text: NEC GENERAL PURPOSE GaAs MESFET FEATURES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7dB at8G H z • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz m "D HIGH MAXIMUM AVAILABLE GAIN 16.0 dB at 4 GHz


    OCR Scan     		PDF NE720 NE72089A NE72000) NE72089A) NE72000 PACKAGEOUTUNE89A NE72000M MB427 ne72089 2SK354A RN50

    NE67383

    Abstract: No abstract text available
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 N O IS E F IG U R E A N D A S S O C IA T E D G A IN vs. FR E Q U E N C Y FEATURES VERY HIGH fMAX: 100 GHz LOW NOISE FIGURE 0.4 0.8 1.4 1.9 3.3 dB dB dB dB dB at at at at at


    OCR Scan     		PDF NE67300 NE67383 NE67383 NE673 NE67300) channe49 lS21l IS12I

    NE42484A

    Abstract: No abstract text available
    Text: SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V , I d s = 10 mA V E R Y L O W N O IS E F IG U R E : 0.8 dB typical at 12 G H z H IG H A S S O C IA T E D G A IN : 10.5 dB Typical at 12 G H z Lg = 0.35 fim, Wg = 200 nm


    OCR Scan     		PDF NE42484A lS21l S21S12 IS12S21I NE42484AS NE42484A-T1 NE42484A

    2SC2340

    Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
    Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan     		PDF L427414 r-33-0S NE568 NE56800 2SC2340 transistor BJ 102 131 NE56800 2SC2339 NE56803 NE56853 NE56857 NE56887 ne56853e