S1302 Search Results

Contextual Info: SIEMENS BUZ 20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 20 Vbs 100 V *> ^DS on Package Ordering Code 13.5 A 0 .2 Q TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current Id 7b = 28 °C

sharp mask rom

Contextual Info: MEMORIES Combination Memories ★ Under development • SRAM +Flash Memory Stacked TSOP Capacity SK configuration 1M SRAM X 4M FLASH X 8 8 LR-S13011 LR-S1302 1MSRAM X 8M FLASH X 8 8 1MSRAM X 16 8M FLASH vA 1O Block) 2M SRAM 1 1 1 1 1 8M FLASH 1 1 1 BM FLASH

KDS 9E

Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
Contextual Info: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter

C67078-S1302-A2

Contextual Info: BUZ 20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 20 100 V 13.5 A 0.2 Ω TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1302-A2

Abstract: BUZ20
Contextual Info: BUZ 20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 20 100 V 13.5 A 0.2 Ω TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^D S o n Package Ordering Code BUZ 20 100 V 13.5 A 0.2 n TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Values Symbol Continuous drain current Unit A b 13.5

Contextual Info: Si7186DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 80 0.0125 at VGS = 10 V 32g a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance www.vishay.com/doc?99912

S13 SOT363

Abstract: marking code 8a
Contextual Info: SQ1905EL www.vishay.com Vishay Siliconix Automotive Dual P-Channel 1.8 V G-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () at VGS = - 4.5 V 0.6 RDS(on) () at VGS = - 2.5 V 0.932 RDS(on) () at VGS = - 1.8 V 2.27 ID (A) • TrenchFET Power MOSFET

62810

Contextual Info: SQJ910EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0110 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0120

C10535E NEC IC PACKAGE MANUAL

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: SPICE Device Model SiS892ADN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si6423DQ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

PD16855

Abstract: UP35
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: SPICE Device Model Si5418DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si4848DY www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si5476DU www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

dallas ds80c320 high speed micro guide

Abstract: transistor bf 175 DS1640
Contextual Info: TABLE OF CONTENTS Short-Form Catalog T im e kee pin g . 1 M emory P ro d u

PD16855

Abstract: UP35
Contextual Info: データ・シート MOS集積回路 MOS Integrated Circuit µ PD16855A/B/C/D USB用デュアルPchハイサイドスイッチ 本製品はユニバーサル・シリアル・バス（USB）の電源バスに使用される過電流制限機能付きパワー・スイッチ

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

ISO 1302

Abstract: RAM 2112 256 word DS1202 DS1302 DS1302S DS1302Z
Contextual Info: DALLAS SEMICONDUCTOR S1302 Trickle Charge Timekeeping Chip PIN ASSIGNMENT FEATURES • Real time d o ck counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation VixæC 7 ^ 7 7 xi C 2 • 31 x 8 RAM for scratchpad data storage

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16855A/B/C/D DUAL HIGH-SIDE SWITCH FOR USB APPLICATION DESCRIPTION This product is the power switch IC with over current limit, used for the power supply bus of the Universal-SerialBus USB . 2 circuit builds in the Pch power MOSFET in the switch part, and this product realizes low on resistance (100 mΩ

B380

Contextual Info: S130/S130S TypJcol A pplication: J E f f i Electric G s m b Masioger 'S ÎS tïÊ : Mororized Toy T m If F iS NCHWüi fijr-ge ftttogs V V 1.5-3-0 3.Q 17D50 02S5 6300 Model S130-2270 A1 Mas. Ettiiiency If f * OÇHÜflÜrç Ç K A iH q J i t:s a ;j m » s

Contextual Info: SPICE Device Model Si5471DC www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the