SIS892ADN Search Results
SIS892ADN Price and Stock
Vishay Intertechnologies SIS892ADN-T1-GE3N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIS892ADN-T1-GE3) |
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SIS892ADN-T1-GE3 | Reel | 24 Weeks | 3,000 |
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SIS892ADN-T1-GE3 | 50,963 |
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SIS892ADN-T1-GE3 | 27,000 | 3,000 |
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SIS892ADN-T1-GE3 | 27,000 | 28 Weeks | 3,000 |
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SIS892ADN-T1-GE3 | Cut Tape | 31,036 | 1 |
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SIS892ADN-T1-GE3 | Reel | 12,000 | 3,000 |
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SIS892ADN-T1-GE3 | 2,990 | 1 |
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SIS892ADN-T1-GE3 | Reel | 3,000 | 3,000 |
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SIS892ADN-T1-GE3 | 6,000 | 29 Weeks | 3,000 |
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SIS892ADN-T1-GE3 | 6,000 | 1 |
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SIS892ADN-T1-GE3 | 25,826 |
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Vishay Intertechnologies SIS892ADN-T1-GE3.MOSFETs PWRPK 100V 28A N-CH MOSFET |
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SIS892ADN-T1-GE3. | Cut Tape | 2,690 | 10 |
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EBV Chips VI1SIS892ADN-T1-GE3NChannel 100V 28A 33mohm10V (Alt: SIS892ADN-T1-GE3) |
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VI1SIS892ADN-T1-GE3 | 3 Weeks | 1 |
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Vishay Huntington SIS892ADN-T1-GE3Trans MOSFET N-CH 100V 28A 8-Pin PowerPAK 1212 T/R / MOSFET N-CH 100V 28A PPAK 1212 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS892ADN-T1-GE3 | 25,000 |
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SIS892ADN Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIS892ADN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 28A PPAK 1212 | Original |
SIS892ADN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model SiS892ADN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
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SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SiS892ADNContextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
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SiS892ADN SiS892ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
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SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
so8 footprint
Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
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SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 | |
Full MaterialContextual Info: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, Military, and Space) ミリタリー宇宙) AMS(航空、 衛星/GPS 4 |
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SiZ710DT Top-10 SiR662DP CNY64ST CNY65ST IWAS-4832FF-50 VLMx1300 VMN-MS6792-1304-AMS Full Material | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Contextual Info: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, AMS (Avionics, Military, and Space) Military, and Space) Satellites/GPS 4 |
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SiZ710DT Top-10 SiR662DP CNY64ST CNY65ST IWAS-4832FF-50 VLMx1300 VMN-MS6761-1212 |