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    SIS892ADN Price and Stock

    Vishay Intertechnologies SIS892ADN-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIS892ADN-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIS892ADN-T1-GE3 Reel 24 Weeks 3,000
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    • 10000 $0.3813
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    Mouser Electronics SIS892ADN-T1-GE3 50,963
    • 1 $1.21
    • 10 $0.845
    • 100 $0.671
    • 1000 $0.468
    • 10000 $0.398
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    Verical () SIS892ADN-T1-GE3 27,000 3,000
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    SIS892ADN-T1-GE3 2,268 15
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    • 100 $0.7286
    • 1000 $0.7074
    • 10000 $0.7074
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    Arrow Electronics () SIS892ADN-T1-GE3 27,000 28 Weeks 3,000
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    • 10000 $0.4081
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    SIS892ADN-T1-GE3 Cut Strips 2,268 24 Weeks 1
    • 1 $0.7498
    • 10 $0.7428
    • 100 $0.7286
    • 1000 $0.7074
    • 10000 $0.7074
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    Newark () SIS892ADN-T1-GE3 Cut Tape 31,036 1
    • 1 $1.07
    • 10 $1.07
    • 100 $0.704
    • 1000 $0.432
    • 10000 $0.378
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    SIS892ADN-T1-GE3 Reel 3,000
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    TTI SIS892ADN-T1-GE3 Reel 12,000 3,000
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    • 10000 $0.38
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    TME SIS892ADN-T1-GE3 2,990 1
    • 1 $0.925
    • 10 $0.763
    • 100 $0.578
    • 1000 $0.463
    • 10000 $0.463
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    Rutronik SIS892ADN-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.446
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    EBV Elektronik SIS892ADN-T1-GE3 6,000 29 Weeks 3,000
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    New Advantage Corporation SIS892ADN-T1-GE3 6,000 1
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    • 10000 $0.7955
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    Vyrian SIS892ADN-T1-GE3 25,826
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    Vishay Intertechnologies SIS892ADN-T1-GE3.

    MOSFETs PWRPK 100V 28A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIS892ADN-T1-GE3. Cut Tape 2,690 10
    • 1 -
    • 10 $0.67
    • 100 $0.67
    • 1000 $0.67
    • 10000 $0.67
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    EBV Chips VI1SIS892ADN-T1-GE3

    NChannel 100V 28A 33mohm10V (Alt: SIS892ADN-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Silica VI1SIS892ADN-T1-GE3 3 Weeks 1
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    Vishay Huntington SIS892ADN-T1-GE3

    Trans MOSFET N-CH 100V 28A 8-Pin PowerPAK 1212 T/R / MOSFET N-CH 100V 28A PPAK 1212
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIS892ADN-T1-GE3 25,000
    • 1 -
    • 10 -
    • 100 $0.9267
    • 1000 $0.6179
    • 10000 $0.6179
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    SIS892ADN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS892ADN-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 28A PPAK 1212 Original PDF

    SIS892ADN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model SiS892ADN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiS892ADN

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    SiS892ADN SiS892ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    so8 footprint

    Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit


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    SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 PDF

    Full Material

    Contextual Info: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, Military, and Space) ミリタリー宇宙) AMS(航空、 衛星/GPS 4


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    SiZ710DT Top-10 SiR662DP CNY64ST CNY65ST IWAS-4832FF-50 VLMx1300 VMN-MS6792-1304-AMS Full Material PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Contextual Info: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, AMS (Avionics, Military, and Space) Military, and Space) Satellites/GPS 4


    Original
    SiZ710DT Top-10 SiR662DP CNY64ST CNY65ST IWAS-4832FF-50 VLMx1300 VMN-MS6761-1212 PDF