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    S1106 Price and Stock

    Allegro MicroSystems LLC APS11060LUAA-0SL

    Board Mount Hall Effect / Magnetic Sensors ASIL-A VERTICAL HALL-EFFECT SWITCH IC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics APS11060LUAA-0SL 3,910
    • 1 $0.69
    • 10 $0.559
    • 100 $0.529
    • 1000 $0.439
    • 10000 $0.383
    		Buy Now

    Renesas Electronics Corporation 8P34S1106NLGI

    Clock Buffer 1:6 LVDS Output 1.8V Fanout Buffer
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 8P34S1106NLGI 2,906
    • 1 $7.91
    • 10 $6.78
    • 100 $6.29
    • 1000 $6.28
    • 10000 $6.28
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    Microchip Technology Inc UES1106

    Rectifiers UFR,FRR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics UES1106 530
    • 1 $19.2
    • 10 $19.12
    • 100 $18.42
    • 1000 $18.42
    • 10000 $18.42
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    TE Connectivity PKS1106B1/4

    Knobs & Dials 1.17" LINE IND/SKRT STR KNURL KNOB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PKS1106B1/4 468
    • 1 $6.33
    • 10 $5.93
    • 100 $5.3
    • 1000 $4.72
    • 10000 $4.72
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    TTI PKS1106B1/4 Bulk 77 1
    • 1 $5.9
    • 10 $5.62
    • 100 $4.94
    • 1000 $4.72
    • 10000 $4.72
    		Buy Now

    Samtec Inc TMS-110-60-G-S

    Headers & Wire Housings Through-hole Micro Header, 0.050" x 0.100" Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMS-110-60-G-S 82
    • 1 $3.06
    • 10 $3.06
    • 100 $2.5
    • 1000 $1.88
    • 10000 $1.09
    		Buy Now
    Find more S1106 price and stock on Findchips.com

    S1106 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IS I P art # M o to ro la P art # C irc u it P ac k a g e D S130 D S1103 D S1104 M M AD 130 M M A D 1 103 M M AD 1104 1 2 3 S M B D 2 -7 S M B D 2 -7 S M B D 2 -7 D S 1 105 D S1106 DS1107 M M A D 1 105 M M A D 1 106 M M A D 1 107 4 5 6 S M B D 2 -7 S M B D 2 -7


    OCR Scan     		S1103 S1104 S1106 DS1107 S1108 S1185 AD1185 1N4148, 1N914B, 1N5282 PDF

    Untitled

    Abstract: No abstract text available
    Text: 00 o N- <9 I J ' T 7_ ' 1.74 Part No. Poles A B S B S 1101T SB S1102T SB S1103T SB S1104T SB S1105T SB S1106T SB S1107T SB S1108T SB S1109T SB S1110T SB S1112T 1 2 3.48 6.02 8.56 11.10 13.64 16.18 18.72 21.26 23.80 26.34 31.42 2.54 5.08 7.62 10.16 12.70 15.24


    OCR Scan     		1101T S1102T S1103T S1104T S1105T S1106T S1107T S1108T S1109T S1110T PDF

    74281

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74281 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR316DP 2002/95/EC SiR316DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: nPEX' POWER PA84 • PA84A • PA84S A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • T U C S O N , A R IZ O N A • A P P L IC A T IO N S H O T L IN E 8 0 0 4 2 1 - 1 8 6 5 FEATURES • • • • • • HIGH SLEW RATE — 200V/us FAST SETTLING TIME — .1% in 1ns (PA84S)


    OCR Scan     		PA84A PA84S 00V/us PA84S) BB3584JM PDF

    diode s1 77

    Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
    Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28


    Original     		S1-118 S1-110 S1-103 S1-100 S1-122 S1-127 TTL11 TTL13 TTL15 TTL16 diode s1 77 S124 diode s1 diode s1 74 socket s1 S1-100 S1-128 PDF

    Si4134DY-T1-E3

    Abstract: si4134 c065
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4134 c065 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4228DY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI4176DY

    Abstract: No abstract text available
    Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4176DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4176DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4228DY-T1-E3 2002/95/EC 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 11-Mar-11 PDF

    si4176

    Abstract: SI4176DY
    Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4176DY-T1-E3 2002/95/EC 11-Mar-11 si4176 SI4176DY PDF

    4AB20

    Abstract: No abstract text available
    Text: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS


    Original     		Si4936CDY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 4AB20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4178DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si1424

    Abstract: No abstract text available
    Text: New Product Si1424EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.033 at VGS = 4.5 V 4 0.038 at VGS = 2.5 V 4 0.045 at VGS = 1.8 V 4 0.070 at VGS = 1.5 V 3 VDS (V) 20 Qg (Typ.) 6 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1424EDH 2002/95/EC OT-363 SC-70 Si1424EDH-T1-GE3 11-Mar-11 si1424 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: DG2725 Vishay Siliconix Low Voltage, 1.2 , Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2725 is a CMOS Dual SPDT Dual Single Pole Double Throw analog switch. It features low on-resistance of 0.7  at 3 V power supply, fast switching speed, and low


    Original     		DG2725 DG2725 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR316DP 2002/95/EC SiR316DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI106

    Abstract: SI106-100 SI106-101 SI106-120 SI106-121 SI106-150 SI106-151 SI106-180 SI106-181
    Text: SMT Power Inductor_ _ _ _ _ _ _ SI106 Type Features • Low profile 5.9mm max. height SMD type. ■ Unshielded. ■ Self-leads, suitable for high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Ideal for power source circuits, DC-DC converter,


    OCR Scan     		SI106 SI106-100 SI106-120 SI106-150 SI106-180 S1106 SI106-151 SI106-181 SI106-101 SI106-121 PDF

    74281

    Abstract: sup90n08-4m8p
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 11-Mar-11 74281 sup90n08-4m8p PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


    Original     		Si4276DY-T1-E3 2002/95/EC 150hay 11-Mar-11 SI4276DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4804CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.022 at VGS = 10 V 8 0.027 at VGS = 4.5 V 7.9 • • • • Qg (Typ.) 7 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested


    Original     		Si4804CDY-T1-E3 2002/95/EC 11-Mar-11 PDF