DS1107 Search Results

Contextual Info: S i GEC P L E S S E Y augustes SE M IC OND UC TOR S DS4168-2.3 DS1107SG RECTIFIER DIODE KEY PARAMETERS VRRM 4000V lF AV, 870A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

Contextual Info: DS1107SM31 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.1k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

dsf912sm

Abstract: DS1101SM01 2SM05 DS1107SM30 2SM15 DSF912SM26 DSF912SM01 DSF912SM18
Contextual Info: I f a v 5 5 ° C >f s m |2t O u tlin e 1030 A 12 kA 720 kA2sec 16 T y p e l\lo. V rsm V rrm DS1107SMI24 DS1107SMI25 DS1107SMi26 DS1107SM27 DS1107SM 28 DS1107SM 29 DS1107SM 30 DS1107SM31 DS1107SM 32 DS1107SM 33 DS1107SM 34 DS1107SM35 DS1107SM 36 2800 2900

GEC 44 3A

Contextual Info: AUGUST 1995 DS1107SG DS4168-2.3 DS1107SG RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 4000V VRRM 870A IF AV 15000A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

Contextual Info: IS I P art # M o to ro la P art # C irc u it P ac k a g e D S130 D S1103 D S1104 M M AD 130 M M A D 1 103 M M AD 1104 1 2 3 S M B D 2 -7 S M B D 2 -7 S M B D 2 -7 D S 1 105 D S1106 DS1107 M M A D 1 105 M M A D 1 106 M M A D 1 107 4 5 6 S M B D 2 -7 S M B D 2 -7

DS1107SG36

Abstract: AN4839 DS1107SG DS1107SG35 DS1107SG37 DS1107SG38 DS1107SG39 DS1107SG40
Contextual Info: DS1107SG DS1107SG Rectifier Diode Replaces January 2000 version, DS4168-3.0 DS4168-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 1121A IFSM APPLICATIONS 15000A ■ Rectification ■ Freewheel Diode

Contextual Info: DS1107SM34 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

Contextual Info: DS1107SG DS1107SG Rectifier Diode Replaces January 2000 version, DS4168-3.0 DS4168-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 1121A IFSM APPLICATIONS 15000A ■ Rectification ■ Freewheel Diode

Contextual Info: @ MITEL DS1107SG Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4168 - 2.3 DS4168 -2.4 KEY PARAMETERS VRRM 4000V IF av, 870A 'fs m 15000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

Contextual Info: DS1107SG DS1107SG Rectifier Diode Replaces January 2000 version, DS4168-3.0 DS4168-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 1121A IFSM APPLICATIONS 15000A ■ Rectification ■ Freewheel Diode

DS1107/30

Abstract: DS1107
Contextual Info: Rectifier Diode DS1107 Technical Data Typical applications : All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers . Free-wheeling diodes & traction. Type No. DS1107/24 DS1107/30 DS1107/32 DS1107/36 DS1107/43 VRRM Volts

Contextual Info: DS1107SM24 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage2.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

Contextual Info: DS1107SM26 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage2.6k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

Contextual Info: DS1107SM28 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage2.8k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

DS1107SG

Abstract: DS1107SG35 DS1107SG36 DS1107SG37 DS1107SG38 DS1107SG39 DS1107SG40
Contextual Info: DS1107SG DS1107SG Rectifier Diode Replaces January 2000 version, DS4168-3.0 DS4168-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 1121A IFSM APPLICATIONS 15000A ■ Rectification ■ Freewheel Diode

Contextual Info: DS1107SM36 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.6k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

Contextual Info: DS1107SM27 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage2.7k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

DS1107SG

Abstract: DS1107SG35 DS1107SG36 DS1107SG37 DS1107SG38 DS1107SG39 DS1107SG40
Contextual Info: DS1107SG DS1107SG Rectifier Diode Replaces January 2000 version, DS4168-3.0 DS4168-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 1121A IFSM APPLICATIONS 15000A ■ Rectification ■ Freewheel Diode

Contextual Info: DS1107SM33 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.3k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

Contextual Info: DS1107SM29 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage2.9k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

Contextual Info: DS1107SM30 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

Contextual Info: DS1107SM35 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

Contextual Info: DS1107SM32 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.1k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.12k¥ V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

Contextual Info: SBA4086Z SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features RFMD’s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to