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    S10011 Search Results

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    S10011 Price and Stock

    Rochester Electronics LLC BLF6G38LS-100,112

    RF MOSFET LDMOS 28V SOT502B
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    DigiKey BLF6G38LS-100,112 Bulk 520 3
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    • 10 $114.72
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    Rochester Electronics LLC BLF7G24LS-100,112

    RF MOSFET LDMOS 28V SOT502B
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    DigiKey BLF7G24LS-100,112 Bulk 132 6
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    • 10 $56.05
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    Rochester Electronics LLC BLC6G27LS-100,118

    RF MOSFET
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    DigiKey BLC6G27LS-100,118 Bulk 100 1
    • 1 $563.38
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    Texas Instruments DSLVDS1001-1002EVM

    EVAL BOARD DSLVDS1001 DSLVDS1002
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    DigiKey DSLVDS1001-1002EVM Bulk 16 1
    • 1 $118.8
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    Mouser Electronics DSLVDS1001-1002EVM 4
    • 1 $131.66
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    Sanyo-Denki Co Ltd 9RA1448S10011

    140X38MM 48VDC LOW NOISE RBLS TA
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    DigiKey 9RA1448S10011 Box 6 1
    • 1 $85.36
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    Mouser Electronics 9RA1448S10011 28
    • 1 $84.61
    • 10 $75.51
    • 100 $73.36
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    Neutron USA 9RA1448S10011
    • 1 $203.8
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    Sager 9RA1448S10011 1
    • 1 $75.22
    • 10 $70
    • 100 $63
    • 1000 $63
    • 10000 $63
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    Find more S10011 price and stock on Findchips.com

    S10011 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10011B

    Abstract: No abstract text available
    Text: 深圳市佳美光电电子有限公司 产品规格书 JM-S10011A-B DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 Sales@led-china.com 深圳市佳美光电电子有限公司


    Original     		JM-S10011A-B 0011A 10011B 10011B PDF

    Si1303DL-T1-gE3

    Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN PDF

    SI7143DP-T1-GE3

    Abstract: Si7143DP si7143
    Text: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7143DP 2002/95/EC Si7143DP-T1-GE3 18-Jul-08 si7143 PDF

    Si2300DS

    Abstract: No abstract text available
    Text: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1903DL 2002/95/EC OT-363 SC-70 Si1903DL-T1-E3 Si1903DL-T1-GE3 15hay 11-Mar-11 PDF

    F MARKING 6PIN

    Abstract: No abstract text available
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 11-Mar-11 F MARKING 6PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: + July 1998 D S 9 2 L V 1 021 a n d D S 9 2 L V 1 2 1 0 1 6 - 4 0 M H z 10 B it B u s L V D S S e r i a l i z e r a n d D e s e r i a l i z e r due to charged cable conditions. The DS92LVf02f output pins may be TRI-STATE to achieve a high impedance stale. The PLLcan lock to frequencies between f 6 MHz and


    OCR Scan     		DS92LV1 /DS92LV12 DS92LV1021 10-bit DS92LV1210 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    S10011

    Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115
    Text: S10000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


    Original     		S10000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S10011 S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115 PDF

    P0736

    Abstract: 14ax
    Text: Semiconductor ß LM2635 5-Bit Programmable Synchronous Buck Regulator Controller G e n eral D e s c rip tio n The LM 2635 is a high speed controller designed specifically fo r use in synchronous D C/DC buck converters fo r the Pentium II or D eschutes m icroprocessor. A 5-bit DAC ac­


    OCR Scan     		LM2635 P0736 14ax PDF

    Si1305DL

    Abstract: vishay MOSFET code marking
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 11-Mar-11 vishay MOSFET code marking PDF

    S10011

    Abstract: drMOS compatible
    Text: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power


    Original     		SiC769ACD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S10011 drMOS compatible PDF

    Si2300DS

    Abstract: SI2300 Si2300DS-T1-GE3 P2 MARKING CODE s100111rev
    Text: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 18-Jul-08 SI2300 P2 MARKING CODE s100111rev PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1403BDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.150 at VGS = - 4.5 V - 1.5 - 20 0.175 at VGS = - 3.6 V - 1.4 0.265 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1403BDL 2002/95/EC OT-363 SC-70 Si1403BDL-T1-E3 Si1403BDL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Si1403BDL-T1-E3

    Abstract: Si1403BDL-T1-GE3 S10011
    Text: Si1403BDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.150 at VGS = - 4.5 V - 1.5 - 20 0.175 at VGS = - 3.6 V - 1.4 0.265 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1403BDL 2002/95/EC OT-363 SC-70 Si1403BDL-T1-E3 Si1403BDL-T1-GE3 18-Jul-08 S10011 PDF

    100C

    Abstract: MLP66-40 MOSFET Device Effects on Phase Node Ringing in VR SiC76 SiC769ACD
    Text: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power


    Original     		SiC769ACD 18-Jul-08 100C MLP66-40 MOSFET Device Effects on Phase Node Ringing in VR SiC76 PDF

    Si1303DL-T1-gE3

    Abstract: Si1303DL
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 18-Jul-08 PDF

    SiC769CD

    Abstract: 100C MLP66-40 SiC769CD-T1-E3 IHLP-5050EZ SiC769DB intel drMOS compliant MOSFET Device Effects on Phase Node Ringing in VR
    Text: SiC769CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		SiC769CD 18-Jul-08 100C MLP66-40 SiC769CD-T1-E3 IHLP-5050EZ SiC769DB intel drMOS compliant MOSFET Device Effects on Phase Node Ringing in VR PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1903DL 2002/95/EC OT-363 SC-70 Si1903DL-T1-E3 Si1903DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1903DL 2002/95/EC OT-363 SC-70 Si1903DL-T1-E3 Si1903DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    AN814

    Abstract: No abstract text available
    Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1903DL 2002/95/EC OT-363 SC-70 Si1903DL-T1-E3 Si1903DL-T1-GE3 15trademarks 2011/65/EU 2002/95/EC. 2002/95/EC AN814 PDF

    SiC76

    Abstract: No abstract text available
    Text: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power


    Original     		SiC769ACD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiC76 PDF