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    S0907 Search Results

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    S0907 Price and Stock

    MEC Switches A/S 2S09-07.0

    EXTENDER SWITCH 7MM HEIGHT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2S09-07.0 Bag 15,520 1
    • 1 $0.55
    • 10 $0.496
    • 100 $0.4491
    • 1000 $0.40678
    • 10000 $0.37953
    		Buy Now
    Newark 2S09-07.0 Bulk 1 1
    • 1 $0.749
    • 10 $0.625
    • 100 $0.607
    • 1000 $0.607
    • 10000 $0.607
    		Buy Now

    MEC Switches A/S 2SS09-07.0

    5 SERIES 7MM EXTENDER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SS09-07.0 Bulk 1,714 1
    • 1 $0.9
    • 10 $0.818
    • 100 $0.7406
    • 1000 $0.67071
    • 10000 $0.62578
    		Buy Now

    Essentra Components 12SWS0907

    WASHER SHOULDER NYLON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 12SWS0907 Bulk 800 1
    • 1 $0.1
    • 10 $0.1
    • 100 $0.0392
    • 1000 $0.0331
    • 10000 $0.0331
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    Mouser Electronics 12SWS0907
    • 1 $0.1
    • 10 $0.041
    • 100 $0.035
    • 1000 $0.031
    • 10000 $0.031
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    TE Connectivity 100P2315S-09-07-L50-C

    100P2315S-09-07-L50-C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 100P2315S-09-07-L50-C Bulk 50
    • 1 -
    • 10 -
    • 100 $369.1624
    • 1000 $369.1624
    • 10000 $369.1624
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    Avnet Americas 100P2315S-09-07-L50-C Bulk 14 Weeks, 5 Days 50
    • 1 -
    • 10 -
    • 100 $401.6488
    • 1000 $254.97255
    • 10000 $254.97255
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    Master Electronics 100P2315S-09-07-L50-C
    • 1 -
    • 10 $1717.48
    • 100 $646.77
    • 1000 $646.77
    • 10000 $646.77
    		Buy Now

    KEMET Corporation T598D106M050ATS0907706

    10.0UF 50.0V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey T598D106M050ATS0907706 Box 140
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.45314
    • 10000 $1.45314
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    Find more S0907 price and stock on Findchips.com

    S0907 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: REV. 1 z ECN.NO. MODIFY.CONTENT S090S043 Initial release S0907005 Change The Swiioh Pin DATE 5 /8 0 '0 8 7/01’09 11.95 5.975 L55±0.13 « 1 3 ^mphe J Y J W No. 8 \ -N o .1 0.95±0.10 g o f 11.10 11.10±o.io 1 l o f 11.95 rm ififTimi m J jj Card Center-^-—


    OCR Scan     		S090S043 S0907005 PDF

    M9226

    Abstract: TGS 308 S 8050 d 331 transistor TGA 345 tga 422 Ox51 s1507 MSS0607 5100H MSS1207
    Text: MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 September 1996 3"/ 6"/ 9"/ 12" / 15" / 18" VOICE ROM Features Single power supply can operate at 2.4 V through 6.0 V. Current output can drive 8 ohm speaker with a transistor. The voice content can be separated to 32 sections.


    Original     		MSS0307/S0607/S0907/S1207/S1507/S1807 20000h) dy17/31 dy23/31 PID247* M9226 TGS 308 S 8050 d 331 transistor TGA 345 tga 422 Ox51 s1507 MSS0607 5100H MSS1207 PDF

    micro SD Card connector

    Abstract: S0905043
    Text: REV. 1 Z ECN.NO. MODIFY.CONTENT DATE S0905043 In itia l release S0907005 Chang* The Sw iioh P in *09 7/01*09 5 /8 0 11.95 5.975 U55±0.13 1 1 « Amphenol 2.40±o.i5 CD Switch IZ Z t I -Hi ~n 2-0.85±o.ts 8 - 0 . 3 0 ± o.05 7-1.10±o.io 7.70 ±o.w Card, Center-


    OCR Scan     		S0905043 S0907005 micro SD Card connector PDF

    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Diode HER 507 PDF

    si410

    Abstract: Si4104
    Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested


    Original     		Si4104DY 2002/95/EC Si4104DY-T1-E3 Si4104DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si410 Si4104 PDF

    Si9407BDY-T1-GE3

    Abstract: Si9407BDY Si9407BDY-T1-E3
    Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 11-Mar-11 PDF

    Si4410BDY

    Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3
    Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 11-Mar-11 PDF

    OX36D-S-MR-R

    Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
    Text: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing


    OCR Scan     		12000-square-meter IS09000-2000, Min15 MXF3200 MXF3200A 12WCMXF3200) 6WCMXF3200A) OX36D-S-MR-R dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


    Original     		Si3430DV 2002/96/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/96/EC


    Original     		Si4426DY 2002/96/EC Si4426DY-T1-E3 Si4426DY-T1-GE3 18-Jul-08 PDF

    SI3433BDV

    Abstract: No abstract text available
    Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si3433BDV 2002/96/EC Si3433BDV-T1-E3 Si3433BDV-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Militar/ Standard Products UT22VP10 Universal R A D pal Product Brief UNITED TECHNOLOGIES MICROELECTRONICS CENTER January 1994 FEATURES □ Low operating current - I d d : 60ma + l^ma/MHz □ High speed Universal RADPAL - tpo? 25ns maximum CMOS 30ns maximum (TEL)


    OCR Scan     		UT22VP10 30MHz MIU-3S333 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		Si3424DV 2002/95/EC Si3424DV-T1-E3 Si3424DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4952DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.023 at VGS = 10 V 8 0.028 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4952DY 2002/95/EC Si4952DY-T1-E3 Si4952DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4423DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 4.5 V - 14 0.009 at VGS = - 2.5 V - 13 0.0115 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4423DY 2002/95/EC Si4423DY-T1-E3 Si4423DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4426DY 2002/95/EC Si4426DY-T1-E3 Si4426DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si3430

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


    Original     		Si3430DV 2002/95/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3430 PDF

    eaton el 198

    Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
    Text: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com


    Original     		877-ETN-CARE CA08100004E V3-T2-65 V3-T2-42â V3-T2-52 V3-T2-39â V3-T2-41 V3-T9-254 V3-T7-17 CA08100004Eâ eaton el 198 ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si4942DY 2002/95/EC Si4942DY-T1-E3 Si4942DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4682DY

    Abstract: Si4682DY-T1-E3 Si4682DY-T1-GE3
    Text: Si4682DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ.) 11 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology


    Original     		Si4682DY 2002/95/EC Si4682DY-T1-E3 Si4682DY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio


    Original     		Si3403DV 2002/95/EC Si3403DV-T1-E3 Si3403DV-T1-GE3 11-Mar-11 PDF

    SI3430DV-T1-E3

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


    Original     		Si3430DV 2002/95/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4682DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ.) 11 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology


    Original     		Si4682DY 2002/95/EC Si4682DY-T1-E3 Si4682DY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V


    Original     		Si4500BDY 2002/95/EC Si4500BDY-T1-E3 Si4500BDY-T1-GE3 11-Mar-11 PDF