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    SI4942DY Search Results

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    SI4942DY Price and Stock

    Vishay Siliconix SI4942DY-T1-E3

    MOSFET 2N-CH 40V 5.3A 8SOIC
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    DigiKey SI4942DY-T1-E3 Cut Tape
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    SI4942DY-T1-E3 Digi-Reel 1
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    SI4942DY-T1-E3 Reel
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    Vishay Siliconix SI4942DY-T1-GE3

    MOSFET 2N-CH 40V 5.3A 8SOIC
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    DigiKey SI4942DY-T1-GE3 Reel
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    Vishay Intertechnologies SI4942DY-T1-E3

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    Bristol Electronics SI4942DY-T1-E3 3,133
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    Quest Components SI4942DY-T1-E3 2,506
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    SI4942DY-T1-E3 2,506
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    Vishay Intertechnologies SI4942DY-T1

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    Bristol Electronics SI4942DY-T1 2,393
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    Quest Components SI4942DY-T1 1,914
    • 1 $0.714
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    SI4942DY-T1 1,103
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    Vishay Intertechnologies SI4942DYT1E3

    DUAL N-CHANNEL 40-V (D-S) MOSFET Small Signal Field-Effect Transistor, 5.3A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI4942DYT1E3 1,170
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    SI4942DY Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4942DY Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET Original PDF
    Si4942DY SPICE Device Model Vishay Dual N-Channel 40-V (D-S) MOSFET Original PDF
    SI4942DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 5.3A 8-SOIC Original PDF
    SI4942DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 5.3A 8-SOIC Original PDF

    SI4942DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF Si4942DY 2002/95/EC Si4942DY-T1-E3 Si4942DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    mosfet 9519

    Abstract: 4017 SPICE MODEL 8206 AN609 Si4942DY 253027
    Text: Si4942DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4942DY AN609 19-Mar-07 mosfet 9519 4017 SPICE MODEL 8206 253027

    Si4942DY

    Abstract: No abstract text available
    Text: Si4942DY New Product Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.4 0.028 @ VGS = 4.5 V 6.4 APPLICATIONS D Low Power Synchronous Rectifier D Automotive 12-V Systems


    Original
    PDF Si4942DY S-21104--Rev. 15-Jul-02

    Si4942DY

    Abstract: No abstract text available
    Text: \\\ SPICE Device Model Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4942DY 0-to-10V 03-Aug-02

    SI4942DY

    Abstract: No abstract text available
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available • Low Power Synchronous Rectifier


    Original
    PDF Si4942DY Si4942DY-T1 Si4942DY-T1-E3 08-Apr-05

    Si4942DY-T1-E3

    Abstract: Si4942DY Si4942DY-T1
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available • Low Power Synchronous Rectifier


    Original
    PDF Si4942DY Si4942DY-T1 Si4942DY-T1-E3 S-61006-Rev. 12-Jun-06

    V2121

    Abstract: Si4942DY
    Text: SPICE Device Model Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4942DY S-52397Rev. 21-Nov-05 V2121

    Untitled

    Abstract: No abstract text available
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF Si4942DY 2002/95/EC Si4942DY-T1-E3 Si4942DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4942DY

    Abstract: Si4942DY-T1-E3 Si4942DY-T1-GE3
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF Si4942DY 2002/95/EC Si4942DY-T1-E3 Si4942DY-T1-GE3 18-Jul-08

    Si4942DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4942DY 18-Jul-08

    Si4942DY

    Abstract: Si4942DY-T1
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.4 0.028 @ VGS = 4.5 V 6.4 APPLICATIONS D Low Power Synchronous Rectifier D Automotive 12-V Systems


    Original
    PDF Si4942DY Si4942DY-T1 S-03950--Rev. 16-May-03

    SI4942DY

    Abstract: No abstract text available
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available • Low Power Synchronous Rectifier


    Original
    PDF Si4942DY Si4942DY-T1 Si4942DY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF Si4942DY 2002/95/EC Si4942DY-T1-E3 Si4942DY-T1-GE3 11-Mar-11

    SI4942DY

    Abstract: No abstract text available
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.4 0.028 @ VGS = 4.5 V 6.4 APPLICATIONS D Low Power Synchronous Rectifier D Automotive 12-V Systems


    Original
    PDF Si4942DY Si4942DY-T1 08-Apr-05

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original
    PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original
    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original
    PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original
    PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110