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    Vishay Intertechnologies SI3403DV-T1-E3

    MOSFETs 20V 5.0A 3.2W
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    Vishay Intertechnologies SI3403DV-T1-GE3

    MOSFETs 20V 5.0A 3.2W 70mohm @ 4.5V
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    Mouser Electronics SI3403DV-T1-GE3
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    SI3403DV Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio


    Original     		PDF Si3403DV 2002/95/EC Si3403DV-T1-E3 Si3403DV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3403DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY - 20 FEATURES rDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 VDS (V) Qg (Typ) • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio 4.5 nC


    Original     		PDF Si3403DV Si3403DV-T1-E3 08-Apr-05

    74404

    Abstract: Si3403DV-T1-E3 SI3403DV
    Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio


    Original     		PDF Si3403DV 2002/95/EC Si3403DV-T1-E3 Si3403DV-T1-GE3 18-Jul-08 74404

    marking code AE

    Abstract: No abstract text available
    Text: Si3403DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY - 20 FEATURES rDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 VDS (V) Qg (Typ) • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio 4.5 nC


    Original     		PDF Si3403DV Si3403DV-T1-E3 18-Jul-08 marking code AE

    74657

    Abstract: AN609 613812
    Text: Si3403DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3403DV AN609 04-May-07 74657 613812

    Untitled

    Abstract: No abstract text available
    Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio


    Original     		PDF Si3403DV 2002/95/EC Si3403DV-T1-E3 Si3403DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74404

    Abstract: si3403
    Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio


    Original     		PDF Si3403DV 2002/95/EC Si3403DV-T1-E3 Si3403DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74404 si3403