S0905 Search Results

micro SD Card connector

Abstract: S0905043
Contextual Info: REV. 1 Z ECN.NO. MODIFY.CONTENT DATE S0905043 In itia l release S0907005 Chang* The Sw iioh P in *09 7/01*09 5 /8 0 11.95 5.975 U55±0.13 1 1 « Amphenol 2.40±o.i5 CD Switch IZ Z t I -Hi ~n 2-0.85±o.ts 8 - 0 . 3 0 ± o.05 7-1.10±o.io 7.70 ±o.w Card, Center-

114-008

Contextual Info: 5 REV. ECN.NO. S0905043 11.95 No.8 of 11.10 7/01'09 2 h WITT g DATE S /2 0 '09 2.40 ±0.15 5 .975 I55±0.t3 MODIFY.CONTENT In itia l teleast Chang* Tht Suriich P in -Ab./ O o -H C5 O 11.10±0.10 r o f 11.95 J B & z a .l j r i —_B B ——H I-C ard C e n i e r - ^ -

Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive

si4916

Contextual Info: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V

Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET

Contextual Info: E-Series Surface Mount Mixer 1600 - 2300 MHz EMRS-1800 V3.00 Features ● ● ● SM-24 LO Power +17 dBm Up to +14 dBm RF Surface Mount Specifications @ 25°C Frequency Range RF LO IF 1600 - 2300 MHz 1600 - 2300 MHz 10 - 200 MHz Conversion Loss dB 1600 - 2300 MHz

DG2727

Abstract: DG2728 DG2747 DG2748 JESD78 Vishay S2 Marking
Contextual Info: DG2727, DG2728, DG2729 Vishay Siliconix 0.65-Ω, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2727, DG2728, and DG2729 are 0.6 Ω dual SPST analog switches. When Sx are used as signal input, these devices support AC-coupled audio signals with single rail

DIODE 0536

Abstract: Si7738 Si7738DP Si7738DP-T1-E3
Contextual Info: New Product Si7738DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 150 0.038 at VGS = 10 V 30 35 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested

IRFIB7N50A

Abstract: SiHFIB7N50A IRFB11N50A SiHFB11N50A SiHFIB7N50A-E3 transistor irfib7n50a
Contextual Info: IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single Available RoHS* COMPLIANT APPLICATIONS D TO-220 FULLPAK • Low Gate Charge Qg Results in Simple Drive

Contextual Info: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available

Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES PRODUCT SUMMARY VDS V 40 RDS(on) (Ω) ID (A) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

eaton el 198

Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
Contextual Info: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com

Contextual Info: Si4908DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 5.0 0.070 at VGS = 4.5 V 4.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

Si2305ADS

Abstract: Si2305ADS-T1-E3 SI2305ADS-T1-GE3
Contextual Info: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.016 at VGS = 4.5 V 9.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

DG2728

Contextual Info: DG2727, DG2728, DG2729 Vishay Siliconix 0.65-Ω, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2727, DG2728, and DG2729 are 0.6 Ω dual SPST analog switches. When Sx are used as signal input, these devices support AC-coupled audio signals with single rail

si4840

Abstract: SI4840BDY-T1-E3 si4840bdy
Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si4916DY-T1-E3

Abstract: TB 9A DIOD
Contextual Info: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V

64895

Contextual Info: SPICE Device Model SiR404DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si1473DH

Contextual Info: New Product Si1473DH Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 2.7 0.145 at VGS = - 4.5 V - 2.7 VDS (V) - 30 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

8670s

Contextual Info: SPICE Device Model SJ800DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si4906DY-T1-E3

Abstract: Si4906DY-T1-GE3 SI4906DY
Contextual Info: Si4906DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET