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    SI3460DV Price and Stock

    Vishay Siliconix SI3460DV-T1-E3

    MOSFET N-CH 20V 5.1A 6TSOP
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    SI3460DV-T1-E3 Digi-Reel 1
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    RS SI3460DV-T1-E3 Bulk 3,000
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    Vishay Siliconix SI3460DV-T1-GE3

    MOSFET N-CH 20V 5.1A 6TSOP
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    Vishay Intertechnologies SI3460DV-T1-GE3

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    Bristol Electronics SI3460DV-T1-GE3 3,000
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    Quest Components SI3460DV-T1-GE3 2,400
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    Vishay Intertechnologies SI3460DV-T1

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    Bristol Electronics SI3460DV-T1 1,154 4
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    Quest Components SI3460DV-T1 1,080
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    SI3460DV-T1 923
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    Vishay Dale SI3460DV-T1-E3

    5100 MA, 20 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET
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    Quest Components SI3460DV-T1-E3 13
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    Find more SI3460DV price and stock on Findchips.com

    SI3460DV Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si3460DV Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    SI3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET Original PDF
    Si3460DV SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI3460DV-T1 Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    Si3460DV-T1 Vishay Siliconix N-Channel 20-V (D-S) MOSFET Original PDF
    SI3460DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 5.1A 6TSOP Original PDF
    SI3460DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 5.1A 6TSOP Original PDF

    SI3460DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 11-Mar-11

    AN609

    Abstract: Si3460DV
    Text: Si3460DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3460DV AN609 01-Mar-06

    Si3460DV

    Abstract: No abstract text available
    Text: Si3460DV New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V 6.8 0.032 @ VGS = 2.5 V 6.3 0.038 @ VGS = 1.8 V 5.7 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET


    Original     		PDF Si3460DV S-02448--Rev. 06-Nov-00

    Si3460DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3460DV N-Channel 20-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si3460DV

    Untitled

    Abstract: No abstract text available
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si3460DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3460DV 18-Jul-08

    TSOP-6 .54

    Abstract: SI3460DV
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V 6.8 0.032 @ VGS = 2.5 V 6.3 0.038 @ VGS = 1.8 V 5.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D


    Original     		PDF Si3460DV Si3460DV-T1 08-Apr-05 TSOP-6 .54

    Si3460DV-T1-E3

    Abstract: Si3460BDV Si3460DV Si3460DV-T1 SI3460BDV-T1-E3
    Text: Specification Comparison Vishay Siliconix Si3460BDV vs. Si3460DV Description: N-Channel, 20 V D-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3460BDV-T1-E3 Replaces Si3460DV-T1-E3 Si3460BDV-T1-E3 Replaces Si3460DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si3460BDV Si3460DV Si3460BDV-T1-E3 Si3460DV-T1-E3 Si3460DV-T1 07-Dec-06

    SI3460DV

    Abstract: No abstract text available
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS* COMPLIANT TSOP-6


    Original     		PDF Si3460DV Si3460DV-T1 Si3460DV-T1-E3 08-Apr-05

    SI3460DV

    Abstract: No abstract text available
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS* COMPLIANT TSOP-6


    Original     		PDF Si3460DV Si3460DV-T1 Si3460DV-T1-E3 18-Jul-08

    71516

    Abstract: Si3460DV
    Text: SPICE Device Model Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3460DV 04-Jan-01 71516

    Si3460DV-T1-E3

    Abstract: Si3460DV
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 18-Jul-08

    Si3460DV

    Abstract: Si3460DV-T1 71329
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V 6.8 0.032 @ VGS = 2.5 V 6.3 0.038 @ VGS = 1.8 V 5.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D


    Original     		PDF Si3460DV Si3460DV-T1 S-31725--Rev. 18-Aug-03 71329

    Untitled

    Abstract: No abstract text available
    Text: LTC3872 No RSENSE Current Mode Boost DC/DC Controller FEATURES n n n n n n n n n n DESCRIPTION No Current Sense Resistor Required VOUT up to 60V Constant Frequency 550kHz Operation Internal Soft-Start and Optional External Soft-Start Adjustable Current Limit


    Original     		PDF LTC3872 550kHz OT-23 LTC3704 50kHz LTC1871/LTC1871-7 LTC3703/LTC3703-5 600kHz, SSOP-16, SSOP-28

    Untitled

    Abstract: No abstract text available
    Text: SiP21301 Vishay Siliconix Series Linear Regulator Controller DESCRIPTION FEATURES SiP21301 is a single channel series regulator controller to drive N-Channel MOSFET. It is the perfect choice for the low voltage, high current application. This controller provides the complete features, such as


    Original     		PDF SiP21301 08-Apr-05

    GRM21BR60J226ME39B

    Abstract: 4TPC47M VJ0603Y103KXAAT CRCW06032102F LM1770 LM1770UMF MSS7341-502NLB SI3460DV SI3867DV SOT235 2A
    Text: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥1400 ChanceāDunlap 2005౎9ሆ ०঻ āāLM1770ਸ݀ӱ‫ڦ‬ยऺ༑༪କሞᆶ၌‫ۉڦ‬ୟӱ੣क़ āāLM1770๟ᅃ੼ཞօইუਸ࠲੦዆ഗLjీࠕথ๴‫ڦ‬ ዐਸ݀ᆌᆩ‫ڦ‬੗ీႠăLM1770থ๴5V‫ڦ‬๼෇ࡆ‫ۉ‬უLj


    Original     		PDF LM1770 2000ns LM1770U) OT23-5 378KHz GRM21BR60J226ME39B 4TPC47M VJ0603Y103KXAAT CRCW06032102F LM1770 LM1770UMF MSS7341-502NLB SI3460DV SI3867DV SOT235 2A

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    PS8101T

    Abstract: J3303 j3305 AR8121 P2003EVG ASM1442T AU-6433 RT8206 AR8131 UP7711U8
    Text: 5 D 4 3 Penryn SFF BLOCK DIAGRAM ULV 2 CPU DUAL CORE: SU9400 1.4 GHz SU9300 1.3 GHz SINGLE CORE: SU3300 1.2GHz 1 CLOCK GENERATOR FAN & THERMAL SENSOR D 956 uFCBGA FSB 800MHz LVDS DDR2 667 GS45 Express CRT ON BOARD DDR2 2Gb X 8 HDMI LEVEL SHIFTER Parade PS8101T


    Original     		PDF PS8101T 800MHz SU9400 SU9300 SU3300 100MHz 256Mb AU-6433 ALC269 AR8131 PS8101T J3303 j3305 AR8121 P2003EVG ASM1442T AU-6433 RT8206 AR8131 UP7711U8

    FDW2520C

    Abstract: LTC3736-2 LTC3736EGN-2 Si9801DY TSSOP-8 footprint and soldering sot-23 marking g02 tssop8 flyback pwm tssop8
    Text: LTC3736-2 Dual 2-Phase, No RSENSE , Synchronous Controller with Output Tracking DESCRIPTION TM FEATURES n n n n n n n n n n n n n n n n No Current Sense Resistors Required Out-of-Phase Controllers Reduce Required Input Capacitance Tracking Function Wide VIN Range: 2.75V to 9.8V


    Original     		PDF LTC3736-2 24-Lead LTC3808 16-Lead LTC3809/LTC3809-1 10-Lead 37362fb FDW2520C LTC3736-2 LTC3736EGN-2 Si9801DY TSSOP-8 footprint and soldering sot-23 marking g02 tssop8 flyback pwm tssop8

    5.5V .22f capacitor

    Abstract: 1nF CAPACITOR 20193301 national semiconductor rohs 6TPC68M CRCW06031002F CRCW06032102F GRM21BR60J226ME39 LM1771 MSS7341-502NLB
    Text: ঻ถ āāጀᅪ‫ڟ‬LM1771ೠࠚӱ‫ڦ‬ยऺᆌᆩ‫ܔ‬੣क़ᆶጣჹ߭ āāLM1771๟ᅃ੼ߛၳইუਸ࠲੦዆ഗLjీࠕॽ‫ྷݔ‬ ᄲ൱ăኝ߲‫ۉ‬ᇸሞଇ֫PCBฉ቞ᆶ௬ओณᇀ.86''ġ.76''Lj ሞ2.8V዁5.5V‫ڦ‬๼෇‫ۉ‬უገ࣑‫گׯ‬዁0.8V‫ڦ‬࿘ۨ๼‫ۉ؜‬


    Original     		PDF LM1771 2000ns LM1771U) 378kHz 5.5V .22f capacitor 1nF CAPACITOR 20193301 national semiconductor rohs 6TPC68M CRCW06031002F CRCW06032102F GRM21BR60J226ME39 LM1771 MSS7341-502NLB

    Untitled

    Abstract: No abstract text available
    Text: LM1771 www.ti.com SNVS446B – JUNE 2006 – REVISED OCTOBER 2006 LM1771 Low-Voltage Synchronous Buck Controller with Precision Enable and No External Compensation Check for Samples: LM1771 FEATURES DESCRIPTION • • • • • • • • • The LM1771 is an efficient synchronous buck


    Original     		PDF LM1771 SNVS446B LM1771

    4TPB150MC

    Abstract: IHLP-2525CZ-01 LTC3809 LTC3809EDD MBRM120L Si7540DP 5 pin pulse transformer
    Text: LTC3809 No RSENSETM, Low EMI, Synchronous DC/DC Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No Current Sense Resistor Required Selectable Spread Spectrum Frequency Modulation for Low Noise Operation Constant Frequency Current Mode Operation for


    Original     		PDF LTC3809 250kHz 750kHz) 550kHz, LTC3776 850kHz, 24-Lead LTC3808 3809f 4TPB150MC IHLP-2525CZ-01 LTC3809 LTC3809EDD MBRM120L Si7540DP 5 pin pulse transformer

    CC21 CAPACITOR

    Abstract: No abstract text available
    Text: Preliminary Technical Data ADP1829, APD210X and ADP171X Reference Design FCDC 00059 FEATURES Seven Output Voltages: 3.6 V, 3.3 V,3.3l V 2.5 V, 1.8 V, 1.25 V, 0.9 V Output Current: 0.002 A to 3.0 A Input voltage: 10.8-13.2 V Ripple 2% ppk of Output Voltage


    Original     		PDF ADP1829, APD210X ADP171X ADP171X CC21 CAPACITOR