RX1214B3 Search Results
RX1214B3 Price and Stock
Ampleon RX1214B300Y,114RF TRANS NPN 60V 1.4GHZ CDFM2 |
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RX1214B300Y,114 | Tray |
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NXP Semiconductors RX1214B300YI,112High Reliability RF BJT IC |
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RX1214B300YI,112 | 15 | 1 |
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RX1214B300YI,112 | 15 | 1 |
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Ampleon RX1214B300YIRX1214B300Y - Microwave Power Transistor |
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RX1214B300YI | 402 | 1 |
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RX1214B3 Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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RX1214B300Y | Advanced Semiconductor | Transistor | Original | |||
RX1214B300Y |
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NPN microwave power transistor - Application: L-band Radar ; Description: L-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 5 %; Efficiency: 40 %; Frequency: 1200 - 1400 MHz; Load power: 320 W; Operating voltage: 50 VDC; Power gain: 8 dB; Pulse width: 150 us | Original | |||
RX1214B300Y |
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NPN microwave power transistor | Original | |||
RX1214B300Y |
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Pulsed Microwave Power Transistor | Original | |||
RX1214B300Y | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | |||
RX1214B300Y |
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NPN microwave power transistor | Scan | |||
RX1214B300Y,114 |
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NPN microwave power transistor - Application: L-band Radar ; Description: L-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 5 %; Efficiency: 40 %; Frequency: 1200 - 1400 MHz; Load power: 320 W; Operating voltage: 50 VDC; Power gain: 8 dB; Pulse width: 150 us; Package: SOT439A (CDFM2); Container: Blister pack | Original | |||
RX1214B350Y |
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NPN Microwave Power Transistor | Original | |||
RX1214B350Y | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | |||
RX1214B350Y |
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NPN Microwave Power Transistor | Scan |
RX1214B3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A |
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RX1214B300Y OT439 | |
RX1214B300YContextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES RX1214B300Y PINNING - SOT439A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR |
OCR Scan |
OT439A MBH904 MBH903 RX1214B300Y RX1214B300Y | |
RX1214B300YContextual Info: RX1214B300Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A DESCRIPTION: A 4x .062 x 45° The ASI RX1214B300Y is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° 2xB C F E D G FEATURES: I • Internal Input/Output Matching Network |
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RX1214B300Y RX1214B300Y | |
RX1214B300Y
Abstract: RX1214B300 L-Band
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RX1214B300Y OT439A SCA53 127147/00/02/pp12 RX1214B300Y RX1214B300 L-Band | |
RX1214B350YContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium |
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RX1214B350Y SCA53 127147/00/02/pp12 RX1214B350Y | |
RX1214B300YContextual Info: N AMER PH ILIP S/D ISCRETE ObE D ^53131 GOlSlô'ï □ • RX1214B300Y t r ^ 3 3 - / r PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications. |
OCR Scan |
RX1214B300Y D01S113 RX1214B3 RX1214B300Y | |
RX1214B350Y
Abstract: SC15 TP130 985 transistor erie 1250-003 transistor list
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OCR Scan |
RX1214B350Y OT439A. RX1214B350Y SC15 TP130 985 transistor erie 1250-003 transistor list | |
Philips electrolytic 106 screw
Abstract: STR aluminium electrolytic capacitor
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OCR Scan |
RX1214B350Y RX1214B350Y SCA53 127147/00/02/pp12 Philips electrolytic 106 screw STR aluminium electrolytic capacitor | |
T01A transistor
Abstract: T01A RX1214B300Y SC15
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OCR Scan |
RX1214B300Y OT439A OT439A. T01A transistor T01A RX1214B300Y SC15 | |
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium |
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RX1214B350Y OT439 | |
Contextual Info: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor |
OCR Scan |
RX1214B300Y RX1214B300Y OT439A 7/00/02/pp12 | |
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms/10% Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. |
OCR Scan |
RX1214B350Y | |
LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
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OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent | |
BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
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BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 | |
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BLF4G08LS-160A
Abstract: J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A
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31-Dec-10 30-Jun-11 UBA2074AT/N1 UBA2074T/N1 UBA2074T/N1 31-Mar-11 UBA2074TS/N1 UBA2074TS/N1 BLF4G08LS-160A J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A | |
BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
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OCR Scan |
BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 | |
MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
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2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent | |
Philips Semiconductors Selection Guide
Abstract: LTE42005S BLS2731-10
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RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S | |
bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
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OCR Scan |
1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 | |
BGY116a
Abstract: fo-57C BGY114E
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OCR Scan |
BGY110G BGY95A BGY95B BGY96B BGY114A BGY114B BGY114C BGY114D BGY114E BGY116A fo-57C | |
2SC636
Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
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2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470 | |
Contextual Info: N AMER PHILIPS/DISCRETE PULSED M ICROW AVE POW ER TR A N S IS TO R NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications. Features • Interdigitated structure; giving a high emitter efficiency |
OCR Scan |
bS3131 RX1214B300Y 7Z24043 | |
transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
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OCR Scan |
SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 | |
tda8510j 2.1 creative amplifiers
Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J
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PNX1300 PNX1300, PNX1500 SAA6752 tda8510j 2.1 creative amplifiers transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J |