RX1214B Search Results

RX1214B Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RX1214B300YI		Rochester Electronics LLC	RX1214B300Y - Microwave Power Transistor (Ampleon Die)

RX1214B Price and Stock

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Rochester Electronics LLC RX1214B280YH MICROWAVE POWER TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RX1214B280YH	Bulk			2	1 - 10 $273.73 100 $273.73 1000 $273.73 10000 $273.73	Buy Now
Ampleon RX1214B300Y,114 RF TRANS NPN 60V 1.4GHZ CDFM2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RX1214B300Y,114	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors RX1214B300YI,112 High Reliability RF BJT IC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RX1214B300YI,112		15		1	1 $565 10 $565 100 $531.1 1000 $480.25 10000 $480.25	Buy Now
Rochester Electronics	RX1214B300YI,112		15		1	1 $452 10 $452 100 $424.88 1000 $384.2 10000 $384.2	Buy Now
Ampleon RX1214B130YI NPN microwave power transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RX1214B130YI		753		1	1 $332.55 10 $332.55 100 $312.6 1000 $282.67 10000 $282.67	Buy Now
Ampleon RX1214B280YH RX1214B280YH - Microwave Power Transistor (Cus Special)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RX1214B280YH		156		1	1 $263.2 10 $263.2 100 $247.41 1000 $223.72 10000 $223.72	Buy Now

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RX1214B Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
RX1214B130Y	Philips Semiconductors	NPN microwave power transistor	Original	PDF
RX1214B130Y	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
RX1214B130Y	Philips Semiconductors	NPN microwave power transistors	Scan	PDF
RX1214B150W	Philips Semiconductors	Microwave Power Transisitor	Scan	PDF
RX1214B170W	Philips Semiconductors	Microwave Power Transistor	Original	PDF
RX1214B170W	Philips Semiconductors	NPN silicon planar epitaxial microwave power transistor	Scan	PDF
RX1214B170W	Philips Semiconductors	Microwave power transistor	Scan	PDF
RX1214B300Y	Advanced Semiconductor	Transistor	Original	PDF
RX1214B300Y	NXP Semiconductors	NPN microwave power transistor - Application: L-band Radar ; Description: L-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 5 %; Efficiency: 40 %; Frequency: 1200 - 1400 MHz; Load power: 320 W; Operating voltage: 50 VDC; Power gain: 8 dB; Pulse width: 150 us	Original	PDF
RX1214B300Y	Philips Semiconductors	NPN microwave power transistor	Original	PDF
RX1214B300Y	Philips Semiconductors	Pulsed Microwave Power Transistor	Original	PDF
RX1214B300Y	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
RX1214B300Y	Philips Semiconductors	NPN microwave power transistor	Scan	PDF
RX1214B300Y,114	NXP Semiconductors	NPN microwave power transistor - Application: L-band Radar ; Description: L-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 5 %; Efficiency: 40 %; Frequency: 1200 - 1400 MHz; Load power: 320 W; Operating voltage: 50 VDC; Power gain: 8 dB; Pulse width: 150 us; Package: SOT439A (CDFM2); Container: Blister pack	Original	PDF

RX1214B350Y	Philips Semiconductors	NPN Microwave Power Transistor	Original	PDF
RX1214B350Y	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
RX1214B350Y	Philips Semiconductors	NPN Microwave Power Transistor	Scan	PDF
RX1214B80W	Philips Semiconductors	NPN microwave power transistor	Original	PDF
RX1214B80W	Philips Semiconductors	NPN microwave power transistors	Scan	PDF

RX1214B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A	Original	PDF	RX1214B300Y OT439
RX1214B130Y Abstract: RX1214B80W Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium	Original	PDF	RX1214B80W; RX1214B130Y SCA53 127147/00/02/pp12 RX1214B130Y RX1214B80W
RX1214B300Y Abstract: No abstract text available Text: RX1214B300Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A DESCRIPTION: A 4x .062 x 45° The ASI RX1214B300Y is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° 2xB C F E D G FEATURES: I • Internal Input/Output Matching Network	Original	PDF	RX1214B300Y RX1214B300Y
RX1214B300Y Abstract: RX1214B300 L-Band Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A	Original	PDF	RX1214B300Y OT439A SCA53 127147/00/02/pp12 RX1214B300Y RX1214B300 L-Band
RX1214B170W Abstract: 100A101 Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium	Original	PDF	RX1214B170W SCA53 127147/00/02/pp12 RX1214B170W 100A101
RX1214B350Y Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium	Original	PDF	RX1214B350Y SCA53 127147/00/02/pp12 RX1214B350Y
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium	Original	PDF	RX1214B80W; RX1214B130Y OT439
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium	Original	PDF	RX1214B350Y OT439
RX1214B150W Abstract: No abstract text available Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C	OCR Scan	PDF	bb53131 RX1214B150W RX1214B150W
Untitled Abstract: No abstract text available Text: 11_ N AMER PHILIPS/DISCRETE LbSBTBl 0015133 OLE D RX1214B150W r J - 3 2 ^ I 'o ' M IC R O W A V E POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.2 to 1.4 GHz frequency range.	OCR Scan	PDF	RX1214B150W bb53T31 T-33-15
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor	OCR Scan	PDF	RX1214B170W 7/00/02/pp12
RX1214B300Y Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES RX1214B300Y PINNING - SOT439A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR	OCR Scan	PDF	OT439A MBH904 MBH903 RX1214B300Y RX1214B300Y
RX1214B150W Abstract: No abstract text available Text: T ^ 3 3 - lè RX1214B150W PHILIPS INTERNATIONAL SbE D Bi 7110fl2b DDHbSlE 1T2 « P H I N — M IC R O W A V E P O W E R T R A N S IS T O R NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power am plifier, operating in the 1.2 to 1.4 G H z frequency range.	OCR Scan	PDF	RX1214B150W 7110fl2b 711002b 7Z242Ã RX1214B150W
atc100a101kp Abstract: No abstract text available Text: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK REFERENCE DATA	OCR Scan	PDF	AT3-7271SL ATC100A101kp50x LC455 atc100a101kp

STT 433 Abstract: variable capacitor erie ceramic RX1214B170W Tekelec Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium	OCR Scan	PDF	RX1214B170W FO-91B. 71106Eb STT 433 variable capacitor erie ceramic RX1214B170W Tekelec
RX1214B300Y Abstract: No abstract text available Text: N AMER PH ILIP S/D ISCRETE ObE D ^53131 GOlSlô'ï □ • RX1214B300Y t r ^ 3 3 - / r PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications.	OCR Scan	PDF	RX1214B300Y D01S113 RX1214B3 RX1214B300Y
RX1214B170W Abstract: SC15 Text: Philips Semiconductors Product specification Microwave power transistor FEA TU R ES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness RX1214B170W QUICK R E F E R E N C E DATA	OCR Scan	PDF	RX1214B170W MLC455 OT439A. RX1214B170W SC15
RX1214B350Y Abstract: SC15 TP130 985 transistor erie 1250-003 transistor list Text: Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms/10% broadband amplifier. • Internal input prematching networks allow an easier design of	OCR Scan	PDF	RX1214B350Y OT439A. RX1214B350Y SC15 TP130 985 transistor erie 1250-003 transistor list
Philips electrolytic 106 screw Abstract: STR aluminium electrolytic capacitor Text: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y	OCR Scan	PDF	RX1214B350Y RX1214B350Y SCA53 127147/00/02/pp12 Philips electrolytic 106 screw STR aluminium electrolytic capacitor
T01A transistor Abstract: T01A RX1214B300Y SC15 Text: Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y PINNING - SOT439A FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR	OCR Scan	PDF	RX1214B300Y OT439A OT439A. T01A transistor T01A RX1214B300Y SC15
RX1214B150W Abstract: transistor bc 325 Text: J J _ L _ _ N AMER PHILIPS/DISCRETE OLE D • I JJ ^ O5O3J1 3 1 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C	OCR Scan	PDF	bb53131 RX1214B150W resistanc250 RX1214B150W transistor bc 325
RX1214 Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor Microwave performance up to Tmb = 25 °C in a common-base class C	OCR Scan	PDF	RX1214B80W; RX1214B130Y RX1214B80W MGA258 RX1214
RX1214B Abstract: erie 1250-003 Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor RX1214B170W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor narrowband amplifier.	OCR Scan	PDF	RX1214B170W 100A101kp50x 1214B MBC981 FO-91B. 71106Eb RX1214B erie 1250-003
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor	OCR Scan	PDF	RX1214B300Y RX1214B300Y OT439A 7/00/02/pp12

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RX1214B Search Results

RX1214B Result Highlights (1)

RX1214B Price and Stock

Rochester Electronics LLC RX1214B280YH

Ampleon RX1214B300Y,114

NXP Semiconductors RX1214B300YI,112

Ampleon RX1214B130YI

Ampleon RX1214B280YH

RX1214B Datasheets (19)

RX1214B Datasheets Context Search

Untitled

RX1214B130Y

RX1214B300Y

RX1214B300Y

RX1214B170W

RX1214B350Y

Untitled

Untitled

RX1214B150W

Untitled

Untitled

RX1214B300Y

RX1214B150W

atc100a101kp

STT 433

RX1214B300Y

RX1214B170W

RX1214B350Y

Philips electrolytic 106 screw

T01A transistor

RX1214B150W

RX1214

RX1214B

Untitled