Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RW1A013ZP Search Results

    SF Impression Pixel

    RW1A013ZP Price and Stock

    ROHM Semiconductor RW1A013ZPT2R

    MOSFET P-CH 12V 1.5A 6WEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RW1A013ZPT2R Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    RW1A013ZPT2R Digi-Reel 1
    • 1 $0.4
    • 10 $0.4
    • 100 $0.4
    • 1000 $0.4
    • 10000 $0.4
    Buy Now
    RW1A013ZPT2R Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Ameya Holding Limited RW1A013ZPT2R 90 1
    • 1 $0.46
    • 10 $0.345
    • 100 $0.345
    • 1000 $0.141
    • 10000 $0.113
    Buy Now
    Avnet Silica RW1A013ZPT2R 143 Weeks 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    RW1A013ZP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RW1A013ZPT2R ROHM FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 1.3A WEMT6 Original PDF
    RW1A013ZPT2R ROHM 1.5V Drive Pch MOSFET; Package: WEMT6; Constitution materials list: Packing style: taping; Package quantity: 3000; Original PDF

    RW1A013ZP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RW1A013ZP

    Abstract: No abstract text available
    Text: 1.5V Drive Pch MOSFET RW1A013ZP zDimensions Unit : mm zStructure Silicon P-channel MOSFET WEMT6 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (6) (5) (4) (1) (2) (3) Abbreviated symbol : XC zInner circuit zApplication


    Original
    RW1A013ZP R0039A RW1A013ZP PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Pch MOSFET RW1A013ZP Structure Silicon P-channel MOSFET Dimensions Unit : mm WEMT6 Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (6) (5) (4) (1) (2) (3) Abbreviated symbol : XC Application Switching Inner circuit


    Original
    RW1A013ZP R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: RW1A013ZP Pch -12V -1.3A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 0.7W lFeatures (6) (5) WEMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode.


    Original
    RW1A013ZP 260mW R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RW1A013ZP Datasheet Pch -12V -1.3A Power MOSFET lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 0.7W lFeatures (6) WEMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode.


    Original
    RW1A013ZP 260mW R1102A PDF

    RSD130P10

    Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
    Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents


    Original
    RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND PDF

    RSD130P10

    Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
    Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original
    5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200 PDF

    sp8k10s

    Abstract: SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX
    Text: 2009 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original
    R0039A 51P6023E sp8k10s SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX PDF