Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RT6006 Search Results

    SF Impression Pixel

    RT6006 Price and Stock

    GeneSic Semiconductor Inc MBRT60060

    DIODE MOD SCHOTT 60V 300A 3TOWER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRT60060 Bulk 80
    • 1 -
    • 10 -
    • 100 $116.90975
    • 1000 $116.90975
    • 10000 $116.90975
    Buy Now
    Mouser Electronics MBRT60060
    • 1 -
    • 10 -
    • 100 $116.9
    • 1000 $116.9
    • 10000 $116.9
    Get Quote
    NAC MBRT60060 25
    • 1 -
    • 10 -
    • 100 $137.46
    • 1000 $137.46
    • 10000 $137.46
    Buy Now

    GeneSic Semiconductor Inc MBRT60060R

    DIODE MOD SCHOTT 60V 300A 3TOWER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRT60060R Bulk 80
    • 1 -
    • 10 -
    • 100 $116.90975
    • 1000 $116.90975
    • 10000 $116.90975
    Buy Now
    Mouser Electronics MBRT60060R
    • 1 -
    • 10 -
    • 100 $116.9
    • 1000 $116.9
    • 10000 $116.9
    Get Quote
    NAC MBRT60060R 25
    • 1 -
    • 10 -
    • 100 $137.46
    • 1000 $137.46
    • 10000 $137.46
    Buy Now

    Daco Semiconductor Co Ltd MBRT60060

    Module: diode; double,common cathode; 60V; If: 300Ax2; TO240AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME MBRT60060 1
    • 1 $83.5
    • 10 $66.3
    • 100 $66.3
    • 1000 $66.3
    • 10000 $66.3
    Get Quote

    Daco Semiconductor Co Ltd MBRT60060R

    Module: diode; double,common anode; 60V; If: 300Ax2; TO240AB; screw
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME MBRT60060R 1
    • 1 $83.5
    • 10 $66.3
    • 100 $66.3
    • 1000 $66.3
    • 10000 $66.3
    Get Quote

    RT6006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The


    Original
    PDF TAN500

    chip ic m7

    Abstract: MPA201 200B 25-mils
    Text: MPA201 0.5 Watts, 12.5 Volts, Class A Linear to 500MHz Hybrid Amplifier GENERAL DESCRIPTION The MPA201 is a common emitter amplifier device designed for broadband performance to 500MHz in a format suitable for microstrip assembly and high reliability applications. Its wide dynamic rage and flexibility make it suitable for a


    Original
    PDF MPA201 500MHz MPA201 500MHz RT6006, 25mils, chip ic m7 200B 25-mils

    FET J134

    Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
    Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original
    PDF 1011LD110B 1011LD110B 110Wpk 1030MHz 20Network 250mA, FET J134 JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor

    19S101-40ME4

    Abstract: 19S101-40M ut-85 cable 32K242-40ML5 Rosenberger 19S141-40ME4 19S202-40ME4 cable UT 85 32K243 ROSENBERGER 32K243
    Text: Rosenberger_ of North America, LLC Rosenberger is Exploring New Directions in Surface Mount Technology. Surface Mount Coaxial Connectors SMCC for High Frequency Applications. Released: 03 November, 2000 Prepared by: David Via Rosenberger of North America, LLC.


    Original
    PDF

    Transistor J182

    Abstract: No abstract text available
    Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original
    PDF 1011LD110A 1011LD110A 110Wpk 1030MHz 250mA, Transistor J182

    Untitled

    Abstract: No abstract text available
    Text: MPA201 0.5 Watts, 12.5 Volts, Class A Linear to 500MHz Hybrid Amplifier GENERAL DESCRIPTION The MPA201 is a common emitter amplifier device designed for broadband performance to 500MHz in a format suitable for microstrip assembly and high reliability applications. Its wide dynamic rage and flexibility make it suitable for a


    Original
    PDF MPA201 500MHz MPA201 500MHz RT6006, 25mils,

    1030MHz-1090MHz

    Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
    Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original
    PDF 1011LD110A 1011LD110A 110Wpk 1030MHz 20Network 250mA, 1030MHz-1090MHz capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V

    1000uf, 6.3v electrolytic capacitor

    Abstract: No abstract text available
    Text: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz Preliminary GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The


    Original
    PDF TAN500 1000uf, 6.3v electrolytic capacitor

    j167

    Abstract: transistor j147 960-1215 transistor 500w LM1436 63v 2200uF 200B TAN500 RT6006 TRANSISTOR J214 M12200
    Text: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The


    Original
    PDF TAN500 j167 transistor j147 960-1215 transistor 500w LM1436 63v 2200uF 200B TAN500 RT6006 TRANSISTOR J214 M12200

    Untitled

    Abstract: No abstract text available
    Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original
    PDF 1011LD110B 1011LD110B 110Wpk 1030MHz 250mA,