RQ1E050RP Search Results

Contextual Info: RQ1E050RP Datasheet Pch -30V -5A Power MOSFET lOutline VDSS -30V RDS on (Max.) 31mW ID -5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.

Contextual Info: RQ1E050RP Pch -30V -5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 31mW ID -5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.

Contextual Info: RQ1E050RP Pch -30V -5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 31mW ID -5A PD 1.5W lFeatures (8) TSMT8 (1) (2) (3) (7) (6) (5) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.

RQ1E050RP

Contextual Info: 4V Drive Pch MOSFET RQ1E050RP  Structure Silicon P-channel MOSFET  Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) High power package. 3) 4V drive. (1) (2) (3) (4) Abbreviated symbol :UD  Application Switching  Inner circuit

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

RSD130P10

Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
Contextual Info: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.