RQ TRANSISTOR Search Results

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Contextual Info: TOSHIBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V Small Package

Contextual Info: TOSHIBA SSM3K04FS TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FS HIGH SPEED SWITCH APPLICATIONS Unit in mm With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive : V^h = 0.7—1.3 V Low Gate Threshold Voltage Small Package

SSM3K04FE

Contextual Info: TOSHIBA SSM3K04FE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FE HIGH SPEED SWITCH APPLICATIONS • Unit in mm With Built-in Gate-SoureeResistor : Rq § = 1 M il Typ. 1.6 ± 0.1 0.85 ± 0.1 • 2.5 V Gate Drive • Low Gate Threshold Voltage

Contextual Info: MAX1471 RELIABILITY REPORT FOR MAX1471ATJ+ PLASTIC ENCAPSULATED DEVICES April 27, 2010 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by 'RQ/LSSV Quality Assurance 0DQDJHr, Reliability Engineering Maxim Integrated Products. All rights reserved.

Contextual Info: i, LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA970 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS Low Noise :NF = 3dB(Typ.) RQ

2SK358

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK358 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER, MOTOR AND SOLENOID DRIVE APPLICATIONS. 10.3MAX. 03.6±aZ W{ FEATURES : . Low Drain-Source ON Resistance : Rq s (ON)=0 •^ ^ (Typ.)

Contextual Info: TOSHIBA SSM3K04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FU HIGH SPEED SWITCH APPLICATIONS U n it in mm 2.1 ± 0.1 With Built-in Gate-Source Resistor : Rq § = 1 MO Typ. 1.25 ±0.1 2.5 V Gate Drive Low Gate Threshold Voltage E t

Contextual Info: T O SH IB A SSM3K04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FU HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Source Resistor : Rq § = 1 Mil Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7—1.3 V Small Package

Contextual Info: SIEMENS BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b RDS on Package Ordering Code 3A 3£2 TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Rq s Values

Contextual Info: T O SH IB A SSM3K04FE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE <;<;M3Kn¿LFF HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Source Resistor : Rq § = 1 Mil Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7—1.3 V Small Package

SSM3K04FS

Contextual Info: TOSHIBA SSM3K04FS TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE SSM3K04FS HIGH SPEED SWITCH APPLICATIONS Unit in mm • With Built-in Gate-Source Resistor : Rq § = 1 M il Typ. • 2.5 V Gate Drive • Low Gate Threshold Voltage • Small Package

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel Enhancement 2N7002LT1 3drain Motorola Preferred Device m 2 SOURCE M AXIM U M RATINGS 2 Rating Symbol Value D rain-Source Voltage VDSS 60 Vdc Drain-G ate Voltage Rq s = 1 -0 MS} VDGR 60 Vdc

SSM6N04FU

Contextual Info: TO SH IBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS • • • • With Built-in Gate-Source Resistor : Rq § = 1 M il Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V

FSQ0565RQWDTU

Abstract: q0565R samwha electrolytic capacitor samwha electrolytic capacitor 10v fsq0765r RCD snubber forward converter 250v 1000uf samwha samwha ELECTROLYTIC capacitor spec 10v 1000uf samwha fuse 2a 250v
Contextual Info: FSQ0565RS/RQ Green-Mode Fairchild Power Switch FPS for Quasi-Resonant Operation - Low EMI and High Efficiency Features Description ! Optimized for Quasi-Resonant Converters (QRC) A Quasi-Resonant Converter (QRC) generally shows lower EMI and higher power conversion efficiency than a

SSM3K04FU

Contextual Info: TOSHIBA SSM3K04FU TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE SSM3K04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS • With Built-in Gate-SoureeResistor :Rq § = 1 M il • 2.5 V Gate Drive • Low Gate Threshold Voltage • Small Package 2.1 ± 0.1

Contextual Info: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

CE1F3P

Abstract: D1617
Contextual Info: '$7$ 6+ 7 &203281' 75$16,6725 &( 3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2

J334 transistor

Contextual Info: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.)

Contextual Info: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Samwha Electrolytic capacitor 47uf 400v

Abstract: samwha 1000uF 25V q0565r FSQ0765 samwha 1000uf electrolytic capacitors vishay IN4007 1000uf samwha TO220F-6 250v 1000uf samwha Samwha obsolete series
Contextual Info: FSQ0565RS/RQ Green-Mode Fairchild Power Switch FPS for Quasi-Resonant Operation - Low EMI and High Efficiency Features Description ! Optimized for Quasi-Resonant Converters (QRC) A Quasi-Resonant Converter (QRC) generally shows lower EMI and higher power conversion efficiency than a

q0565r

Abstract: samwha 1000uf 25V samwha 2200uf capacitor FSQ0565RQWDTU 10v 1000uf samwha samwha electrolytic capacitor samwha capacitor samwha electrolytic capacitor 10v samwha 1000uf electrolytic capacitors samwha capacitor part numbers
Contextual Info: FSQ0565RS/RQ Green-Mode Fairchild Power Switch FPS for Quasi-Resonant Operation - Low EMI and High Efficiency Features Description ! Optimized for Quasi-Resonant Converters (QRC) A Quasi-Resonant Converter (QRC) generally shows lower EMI and higher power conversion efficiency than a

BUK416-100BE

Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
Contextual Info: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93

2SK209

Abstract: 2SK209 rank O
Contextual Info: TOSHIBA 2SK209 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK209 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS High |Yfc| : |Yfs| = 15mS Typ. at V DS = 10V, V GS = 0 High Breakdown Voltage : V(2Dg=—50V Low Noise : NF = l.OdB (Typ.) at VDg = 10V, ID = 0.5mA, f=lkH z, RQ = lk n