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    Renesas Electronics Corporation RJH60D0DPM-00-T1

    IGBT TRENCH 600V 45A TO-3PFM
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    Renesas Electronics Corporation RJH60D0DPK-00-T0

    IGBT TRENCH 600V 45A TO-3P
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    RJH60D0 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJH60D0DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO3P Original PDF
    RJH60D0DPM-00#T1 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO3PFM Original PDF
    RJH60D0DPQ-E0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-247 Original PDF

    RJH60D0 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RJH60

    Abstract: RJH60D0 PRSS0003ZA-A RJH60D0DPM-00
    Text: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPM R07DS0156EJ0100 PRSS0003ZA-A em9044 RJH60 RJH60D0 PRSS0003ZA-A RJH60D0DPM-00 PDF

    RJH60D0DPK

    Abstract: jeita sc-65
    Text: Preliminary Datasheet RJH60D0DPK 600V - 22A - IGBT Application: Inverter R07DS0155EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPK R07DS0155EJ0400 PRSS0004ZE-A RJH60D0DPK jeita sc-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D0DPK 600V - 22A - IGBT Application: Inverter R07DS0155EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPK R07DS0155EJ0400 PRSS0004ZE-A PDF

    RJH60D0

    Abstract: RJH60 PRSS0004ZE-A SC-65
    Text: Preliminary Datasheet RJH60D0DPK R07DS0155EJ0200 Previous: REJ03G1845-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPK R07DS0155EJ0200 REJ03G1845-0100) PRSS0004ZE-A di9044 RJH60D0 RJH60 PRSS0004ZE-A SC-65 PDF

    RJH60D0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D0DPK Silicon N Channel IGBT Application: Inverter R07DS0155EJ0300 Rev.3.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPK R07DS0155EJ0300 PRSS0004ZE-A RJH60D0 PDF

    PRSS0003ZH-A

    Abstract: RJH60D0
    Text: Preliminary Datasheet RJH60D0DPQ-A0 600 V - 22 A - IGBT Application: Inverter R07DS0526EJ0100 Rev.1.00 Aug 26, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPQ-A0 R07DS0526EJ0100 PRSS0003ZH-A O-247A) PRSS0003ZH-A RJH60D0 PDF

    PRSS0004ZE-A

    Abstract: SC-65
    Text: Preliminary RJH60D0DPK Silicon N Channel IGBT Application: Inverter REJ03G1845-0100 Rev.1.00 Oct 14, 2009 Features • High breakdown-voltage • Low on-voltage • Built-in diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P C 1. Gate 2. Collector


    Original     		RJH60D0DPK REJ03G1845-0100 PRSS0004ZE-A PRSS0004ZE-A SC-65 PDF

    RJH60D0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D0DPQ-E0 600V - 22A - IGBT Application: Inverter R07DS0737EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPQ-E0 R07DS0737EJ0100 PRSS0003ZE-A O-247) RJH60D0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D0DPQ-E0 600V - 22A - IGBT Application: Inverter R07DS0737EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPQ-E0 R07DS0737EJ0100 PRSS0003ZE-A O-247) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D0DPQ-A0 600 V - 22 A - IGBT Application: Inverter R07DS0526EJ0100 Rev.1.00 Aug 26, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPQ-A0 R07DS0526EJ0100 PRSS0003ZH-A O-247A) PDF

    RJH60D0DPM-00

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPM R07DS0156EJ0200 PRSS0003ZA-A RJH60D0DPM-00 PDF

    RJH60D0DPM-00

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D0DPM 600V - 22A - IGBT Application: Inverter R07DS0156EJ0300 Rev.3.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPM R07DS0156EJ0300 PRSS0003ZA-A RJH60D0DPM-00 PDF

    RJH60D0DPM-00

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D0DPM 600V - 22A - IGBT Application: Inverter R07DS0156EJ0300 Rev.3.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPM R07DS0156EJ0300 PRSS0003ZA-A RJH60D0DPM-00 PDF

    RJH60F7

    Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
    Text: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units


    Original     		RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608 PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK PDF