RF35A2 Search Results

BU 0603

Abstract: 800B BLF6G15L 029-KW
Contextual Info: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth

NI-1230-4H

Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies

Note 5521, AMxP-xxxx production Assembly Process Land Pattern B

Abstract: usb port amplifier circuit diagram RF35A2 AMGP-6551-BLKG
Contextual Info: AMGP-6551 40.5 – 43.5 GHz SMT Packaged Up-Converter Data Sheet Description Features The AMGP-6551 is a surface mount packaged broadband Up-converter that combines a sub-harmonic, SSB mixer with a variable gain amplifier. It is designed for use at frequencies between 37.5 GHz and 43.5 GHz and provides 10

Contextual Info: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

transistor j241

Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: TGA2450-SM 2100 MHz, 2.5 W, Small Cell PA Module Applications •     Small Cell BTS 3G/4G Wireless infrastructure Linearized Transmitter W-CDMA/ LTE/ CDMA Heterogeneous Networks Product Features          20 Pin 20x20 mm Plastic Package

transistor B 764

Abstract: ATC600F150JT250XT 0051A
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from

transistor 832

Contextual Info: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

ATC100B470JT500XT

Abstract: ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 mrf8p9210n ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

ATC600F4R7BT250XT

Abstract: ATC600F390JT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage

SEMICONDUCTOR J598

Abstract: j598 ATC800B0R8BT500XT ATC800B J739
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies

j598

Contextual Info: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.

Contextual Info: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: TGA2450-SM 2100 MHz, 2.5 W, Small Cell PA Module Applications •     Small Cell BTS 3G/4G Wireless infrastructure Linearized Transmitter W-CDMA/ LTE/ CDMA Heterogeneous Networks Product Features          20 Pin 20x20 mm Plastic Package

AMGP-6552

Abstract: 6552
Contextual Info: AMGP-6552 37 – 43.5 GHz Low Noise Down-Converter in SMT Package Data Sheet Description Features The AMGP-6552 is a broadband down-converter that combines a low noise amplifier and a sub-harmonic image reject mixer. It is housed in a 5 x 5 mm surface mount

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies

WELWYN c21

Contextual Info: Document Number: AFT26HW050S Rev. 1, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous

J477

Abstract: J733 J449 MD7IC2250 MD7IC2250N AN1977 IRL 501 TO272* APPLICATION AN1987 ATC600F330JT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2250N Rev. 0, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2250N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage

GSC356-HYB2500

Abstract: MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies

AMGP-6552-BLKG

Contextual Info: AMGP-6552 37 – 43.5 GHz Low Noise Down-Converter in SMT Package Data Sheet Description Features The AMGP-6552 is a broadband down-converter that combines a low noise amplifier and a sub-harmonic image reject mixer. It is housed in a 5 x 5 mm surface mount