Untitled
Abstract: No abstract text available
Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26P100â
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PIMD3
Abstract: No abstract text available
Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power
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NPT35050A
3A001b
750mA,
NDS-003
PIMD3
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Untitled
Abstract: No abstract text available
Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power
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NPTB00050designs
4000MHz
500-1000MHz
3A982
450mA,
3000MHz,
NPTB00050
NDS-007
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20161HS
MRF8P20161HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from
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AFT09MS031N
AFT09MS031NR1
AFT09MS031GNR1
AFT09MS031NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to
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MRF7P20040H
MRF7P20040HR3
MRF7P20040HSR3
10yees,
MRF7P20040HR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage
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MD7IC2251N
MD7IC2251N
MD7IC2251NR1
MD7IC2251GNR1
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ATC600F0R1BT250XT
Abstract: No abstract text available
Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
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MRF8P18265H
MRF8P18265HR6
MRF8P18265HSR6
ATC600F0R1BT250XT
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MRF8P20140WH/HS
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20140WH
MRF8P20140WHR3
MRF8P20140WHSR3
MRF8P20140WH/HS
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with
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MRF8S18260H
MRF8S18260HR6
MRF8S18260HSR6
MRF8S18260HR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth
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MRF8P23160WH
MRF8P23160WHR3
MRF8P23160WHSR3
MRF8P23160WHR3
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Z25 transistor
Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from
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AFT05MP075N
AFT05MP075NR1
AFT05MP075GNR1
Z25 transistor
ATC800B101JT500XT
Wire Microstrip Line
Z-34
J103 transistor
atc600f150jt250xt
BEAD10
AFT05MP075GNR1
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ATC100A101JP150
Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
DataMRFG35010AN
ATC100A101JP150
GT5040
MRFG35010ANT1
ATC100B101JP500XT
080514R7BBS
ATC100A100JP150X
ATC100A101JP150XT
Transistor Z14
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ON SEMICONDUCTOR J122
Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
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MRF8HP21130H
MRF8HP2113ficers,
MRF8HP21130HR3
MRF8HP21130HSR3
MRF8HP21130H
ON SEMICONDUCTOR J122
J730
512 j122
MHz-2170
EMVY500ADA221MJA0G
ATC600F1R2BT250XT
8383d
146 J122
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mosfet J442
Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20161HS
MRF8P20161HSR3
mosfet J442
ATC600F2R0BT250XT
J442
CW12010T0050G
ATC600F100JT250XT
CW12010T0050GBK
AN1955
96VDD
J596
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ATC600F241JT250XT
Abstract: GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT AFT09MS031NR1 inductor 50 NH GRM31CR61H106KA12
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of
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AFT09MS031N
O-270-2
AFT09MS031NR1
AFT09MS031NR1
AFT09MS031GNR1
13ogo,
8/2012Semiconductor,
ATC600F241JT250XT
GRM31CR61H106KA12L
ATC100A220JT150XT
ATC600F220JT250XT
inductor 50 NH
GRM31CR61H106KA12
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j327
Abstract: j327 transistor AFT09S282 transistor j326 J161 mosfet transistor j334 AFT09S282NR3 ATC600F4R7BT250XT AFT09S282N
Text: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
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AFT09S282N
AFT09S282NR3
AFT09S282N
j327
j327 transistor
AFT09S282
transistor j326
J161 mosfet transistor
j334
AFT09S282NR3
ATC600F4R7BT250XT
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amplifier MA-920
Abstract: ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier
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MRFE6S9046N
MRFE6S9046NR1
MRFE6S9046GNR1
MRFE6S9046NR1
amplifier MA-920
ATC600F560BT500XT
TO270WB
atc600
A113
A114
A115
AN1955
MRFE6S9046GN
JESD22
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NPTB00025
Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz
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NPTB00025
4000MHz
500-1000MHz
EAR99
225mA,
3000MHz,
NDS-006
NPTB00025B
AC200BM-F2
AC200B
JESD22-A114
JESD22-A115
UPW1C151MED
ATC600F1R2AT
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth
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AFT20P140-4WNR3
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to
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J499
Abstract: No abstract text available
Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
28ances.
J499
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CGH40180PP
Abstract: CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p
Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high
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CGH40180PP
CGH40180PP
CGH40180PP,
CGH4018
CGH4018
CGH40180PP-TB
JESD22
L30 type RF microwave power transistor
transistor k 3562
atc600f
cgh401
smd transistor s2p
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J122 SMD
Abstract: J122 SMD TRANSISTOR
Text: BLF8G27LS-100P Power LDMOS transistor Rev. 4 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF8G27LS-100P
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J122 SMD TRANSISTOR
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