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American Technical Ceramics Corp ATC100A100JP150X
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	ATC100A100JP150X		351			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	ATC100A100JP150X		515			1 $6 10 $6 100 $2.6 1000 $2.4 10000 $2.4	Buy Now
	ATC100A100JP150X		4			1 $4.2 10 $2.8 100 $2.8 1000 $2.8 10000 $2.8	Buy Now
	ATC100A100JP150X		4			1 $4.2 10 $2.8 100 $2.8 1000 $2.8 10000 $2.8	Buy Now
American Technical Ceramics Corp ATC100A100JP150XB CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 150V, 5% +TOL, 5% -TOL, 90+/-20PPM/CEL TC, 0.00001UF, SURFACE MOUNT, 0606
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100A100JP150XB		4			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components 100A100JP150XT Silicon RF Capacitors / Thin Film 10PF 150V 5% 0505
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TTI	100A100JP150XT	Reel			500	1 - 10 - 100 - 1000 $1.37 10000 $1.06	Buy Now
Kyocera AVX Components 100A100JP150XTV Silicon RF Capacitors / Thin Film 150V 10pF Tol 5% Las Mkg Vertical
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100A100JP150XTV	Reel			500	1 - 10 - 100 - 1000 $1.67 10000 $1.67	Buy Now

ATC100A100JP150X Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ATC100A101JP150 Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
ATC600F1R8BT250XT Abstract: ATC600F220JT250XT lte reference design ATC100A100JP150X MMG3014N ATC200B393KP50XT ATC100A101JP150X Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically	Original	PDF	74claims, MMG3014N MRFG35010AN ATC600F1R8BT250XT ATC600F220JT250XT lte reference design ATC100A100JP150X ATC200B393KP50XT ATC100A101JP150X
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically	Original	PDF	MMG3014N MRFG35010AN
RO4350B Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B