RFP22N10
Abstract: No abstract text available
Text: RFP22N10, RF1S22N10, RF1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFP22N10,
RF1S22N10,
RF1S22N10SM
TA9845.
1-800-4-HARRIS
RFP22N10
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RFP22N10
Abstract: RF1S22N10SM RF1S22N10SM9A TB334
Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding
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RFP22N10,
RF1S22N10SM
RFP22N10
RF1S22N10SM
RF1S22N10SM9A
TB334
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RFP22N10
Abstract: No abstract text available
Text: RFP22N10, RF1S22N10SM Data Sheet Title FP2 10, 1S2 10S bt A, 0V, 80 m, anwer OSTs utho eyrds ter- July 1999 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFP22N10,
RF1S22N10SM
175oC
TB334
RFP22N10
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RFP22N10
Abstract: RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10
Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding
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PDF
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RFP22N10,
RF1S22N10SM
RFP22N10
RF1S22N10SM
RF1S22N10SM9A
TB334
F1S22N10
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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RFP22N10
Abstract: TB334 RF1S22N10SM RF1S22N10SM9A
Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding
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Original
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PDF
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RFP22N10,
RF1S22N10SM
RFP22N10
TB334
RF1S22N10SM
RF1S22N10SM9A
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RFP22N10
Abstract: No abstract text available
Text: RFP22N10, RF1S22N10SM i n t e f s i l D a ta S h e e t , 22A, 100V, 0.080 Ohm N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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OCR Scan
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PDF
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RFP22N10,
RF1S22N10SM
TA9845.
080C1
RFP22N10
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RFP22N10
Abstract: TA9845
Text: ASSESS? RFP22N10, RF1S22N10, RF1S22N10SM 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Aprii 1998 Description Features 22A,100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti
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OCR Scan
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PDF
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RFP22N10,
RF1S22N10,
RF1S22N10SM
O-263AB
RF1S22N10SM
O-263AB
RFP22N10
TA9845
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