Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    F1S22N10 Search Results

    SF Impression Pixel

    F1S22N10 Price and Stock

    Rochester Electronics LLC RF1S22N10

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RF1S22N10 Bulk 342
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.88
    • 10000 $0.88
    		Buy Now

    Rochester Electronics LLC RF1S22N10SM

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RF1S22N10SM Bulk 381
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.79
    • 10000 $0.79
    		Buy Now

    Harris Semiconductor RF1S22N10

    22V, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1S22N10 1,990 1
    • 1 $0.8451
    • 10 $0.8451
    • 100 $0.7944
    • 1000 $0.7183
    • 10000 $0.7183
    		Buy Now

    Harris Semiconductor RF1S22N10SM

    22V, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1S22N10SM 3,853 1
    • 1 $0.7583
    • 10 $0.7583
    • 100 $0.7128
    • 1000 $0.6446
    • 10000 $0.6446
    		Buy Now

    F1S22N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFP22N10

    Abstract: No abstract text available
    Text: RFP22N10, F1S22N10, F1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFP22N10, RF1S22N10, RF1S22N10SM TA9845. 1-800-4-HARRIS RFP22N10

    RFP22N10

    Abstract: RF1S22N10SM RF1S22N10SM9A TB334
    Text: RFP22N10, F1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP22N10, RF1S22N10SM RFP22N10 RF1S22N10SM RF1S22N10SM9A TB334

    RFP22N10

    Abstract: No abstract text available
    Text: RFP22N10, F1S22N10SM Data Sheet Title FP2 10, 1S2 10S bt A, 0V, 80 m, anwer OSTs utho eyrds ter- July 1999 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFP22N10, RF1S22N10SM 175oC TB334 RFP22N10

    RFP22N10

    Abstract: RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10
    Text: RFP22N10, F1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP22N10, RF1S22N10SM RFP22N10 RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    RFP22N10

    Abstract: TB334 RF1S22N10SM RF1S22N10SM9A
    Text: RFP22N10, F1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP22N10, RF1S22N10SM RFP22N10 TB334 RF1S22N10SM RF1S22N10SM9A

    RFP22N10

    Abstract: No abstract text available
    Text: RFP22N10, F1S22N10SM i n t e f s i l D a ta S h e e t , 22A, 100V, 0.080 Ohm N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFP22N10, RF1S22N10SM TA9845. 080C1 RFP22N10

    RFP22N10

    Abstract: TA9845
    Text: ASSESS? RFP22N10, F1S22N10, F1S22N10SM 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Aprii 1998 Description Features 22A,100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­


    OCR Scan     		PDF RFP22N10, RF1S22N10, RF1S22N10SM O-263AB RF1S22N10SM O-263AB RFP22N10 TA9845