MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
|
Original
|
MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
|
PDF
|
AN1232
Abstract: RF Transistor Selection RF POWER TRANSISTOR NPN USE OF TRANSISTOR SD2921
Text: AN1232 Application note Ruggedness improvement of RF DMOS devices Introduction RF amplifiers often experience impedance mismatch between output and load. Such an impedance mismatch generates a reflected wave towards the RF power transistor, making a much more stringent working environment for the transistor. Working conditions grow critical
|
Original
|
AN1232
AN1232
RF Transistor Selection
RF POWER TRANSISTOR NPN
USE OF TRANSISTOR
SD2921
|
PDF
|
GRM39
Abstract: GRM708 RD05MMP1 diode GP 829 6030D
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power
|
Original
|
RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
GRM39
GRM708
diode GP 829
6030D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.
|
Original
|
RD10MMS2
870MHz
RD10MMS2
12Wtyp,
870MHz
800MHz-band
|
PDF
|
transistor t06
Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA
Text: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
|
Original
|
RD00HHS1
30MHz
RD00HHS1
30MHz
transistor t06
RD00HHS1-101
lal04na1r0
t06 TRANSISTOR
LAL04NAR39
TRANSISTOR 7533 A
LAL04NA
|
PDF
|
GP 819
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power
|
Original
|
RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
GP 819
|
PDF
|
LAL04NA
Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
|
Original
|
RD00HHS1
30MHz
RD00HHS1
30MHz
LAL04NA
T113
mosfet HF amplifier
RD00HHS1-101
3M Touch Systems
|
PDF
|
212J
Abstract: rd30hvf
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
RD30HVF1
RD30HVF1
175MHz
RD30HVF1-101
212J
rd30hvf
|
PDF
|
RD02MUS1
Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
|
Original
|
RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
520MHz
175MHz)
520MHz)
T112
UHF transistor FET
RD02MUS1-101
3M Touch Systems
transistor J17
|
PDF
|
RD30HVF1
Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
RD30HVF1-101
rf power transistor rd30hvf1
100OHM
|
PDF
|
RD01MUS1-101
Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
|
Original
|
RD01MUS1
520MHz
RD01MUS1
520MHz
RD01MUS1-101
c111m
RD01MSU1
3M Touch Systems
|
PDF
|
RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
|
Original
|
RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
transistor jc 817
gp 520 diode
gp 817
RF POWER TRANSISTOR
f763
transistor I 17-13 0773
|
PDF
|
mitsubishi top marking
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
|
Original
|
RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
mitsubishi top marking
|
PDF
|
RD16HHF1
Abstract: RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
|
Original
|
RD16HHF1
30MHz
RD16HHF1
30MHz
RD16HHeater
RD16HHF1 application notes
RD16HHF1-101
mosfet HF amplifier
transistor d 1680
RD16HHF
|
PDF
|
|
|
3M Touch Systems
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
|
Original
|
RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
175MHz)
520MHz)
3M Touch Systems
|
PDF
|
245 transistor
Abstract: RF based industrial SOT502 RF Transistor Selection SOT539
Text: ISM 2.45 GHz LDMOS RF power transistor portfolio RF power as a robust and highly efficient energy source With nearly a decade of leadership expertise in the industrial, scientific and medical ISM market, NXP has now created the industry’s first dedicated and complete RF power transistor portfolio for
|
Original
|
OT975
OT502
OT539
OT539
245 transistor
RF based industrial
SOT502
RF Transistor Selection
SOT539
|
PDF
|
RD09MUP2
Abstract: TRANSISTOR D 1765 720 L 0619 1788
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
|
Original
|
RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
TRANSISTOR D 1765 720
L 0619
1788
|
PDF
|
RD20HMF1
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers
|
Original
|
RD20HMF1
900MHz
RD20HMF1
900MHz-band
900MHz
|
PDF
|
rd01mus1 applications
Abstract: RD01MUS1-101 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
|
Original
|
RD01MUS1
520MHz
RD01MUS1
RD01MUS1-101
rd01mus1 applications
3M Touch Systems
|
PDF
|
RD30HVF1
Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
100OHM
RD30HVF1-101
rd30hvf
A 1469 mosfet
|
PDF
|
RD16HHF1 application notes
Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
|
Original
|
RD16HHF1
30MHz
RD16HHF1
30MHz
RD16HHF1-1or
RD16HHF1 application notes
RD16HHF
RD16HHF1-101
RD 15 hf mitsubishi
10Turns
RD16hh
Rf power transistor mosfet
POWER MOSFET APPLICATION NOTE
|
PDF
|
MITSUBISHI RF POWER MOS FET
Abstract: 071J
Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3
|
Original
|
RD30HVF1
175MHz
RD30HVF1
RD30HVF1-101
Oct2011
MITSUBISHI RF POWER MOS FET
071J
|
PDF
|
RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
|
Original
|
RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
RD07MUS2
RD07MUS
diode gp 424
RD07M
AN-VHF-046
AN-UHF-116
f763
AN-UHF-106
AN-VHF-053
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
|
Original
|
RD00HVS1
175MHz
RD00HVS1
175MHz
RD00HVS1-101
|
PDF
|
