RF TRANSISTOR GAIN 20DB Search Results

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

VRF2933

Abstract: LM3905 2204B ATC100B M177 SD2933 transistor fb "RF MOSFET" 300W arco 467 trimmer
Contextual Info: VRF2933 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

"RF MOSFET" 300W

Abstract: arco 467 trimmer 300WF
Contextual Info: VRF2933 50V 300W 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation

VRF148A

Abstract: 2204B M113 MRF148A 647s
Contextual Info: VRF148A 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VRF2933

Abstract: 300WPEP 2204b ATC100B LM3905 SD2933 M177
Contextual Info: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF148A PRELIMINARY 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

MRF148A

Abstract: 2204B M113 VRF148A 10WPEP 300WPEP 92010 647s
Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VRF2933

Abstract: "RF MOSFET" 300W RF POWER VERTICAL MOSFET arco 467 trimmer U126 U126 D atc 100e Power Transformer 786
Contextual Info: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

MRF148A

Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VRF2933

Contextual Info: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VRF2933

Abstract: "RF MOSFET" 300W RF POWER VERTICAL MOSFET U126 D C8 15t
Contextual Info: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

TRANSISTOR Z4

Abstract: CHIP TRANSISTOR omni spectra capacitor 15 F 50 VDC ATC100A MAPLST0822-002PP RO4350 640457-4 RF transistor gain 20dB
Contextual Info: RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V 4/14/05 MAPLST0822-002PP Preliminary Features Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase

Contextual Info: VRF148A G VRF148AMP(G) 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

omni spectra test fixture

Abstract: RF transistor gain 20dB
Contextual Info: RF Power Field Effect Transistor LDMOS, 800—1000 MHz, 2W, 26V 10/31/03 MAPLST0810-002PP Preliminary Features Q Q Q Q Q Package Style Designed for broadband commercial applications up to 1GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion

1206 philips

Contextual Info: Philips Sem iconductors Product specification Variable gain RF predriver amplifier DESCRIPTION SA910 PIN CONFIGURATION o o The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low*profile, surface mount power

st 54003

Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection

Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection

RF FET transistor

Abstract: fet transistor rf
Contextual Info: MAPL-000822-002PP LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V Discontinued For Reference Only Product Image Designed for broadband commercial applications up to 2.2GHz • • • High gain, high efficiency and high linearity Ease of design for gain and insertion phase flatness

QFN-16

Contextual Info: MAPL-000822-002PP LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V M/A-COM Products Preliminary - Rev. 12/07 Product Image Designed for broadband commercial applications up to 2.2GHz • • • High gain, high efficiency and high linearity Ease of design for gain and insertion phase flatness

2SC4244

Abstract: NPN TRANSISTOR SC-70
Contextual Info: TOSHIBA 2SC4244 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4244 UHF TV TUNER RF AMPLIFIER APPLICATIONS. Unit in mm 2.1 ±0.1 • Low Noise Figure : NF = 4dB Typ. • High Power Gain : Gpb = 17dB (Typ.) • Excellent Forward AGC Characteristics

2sc4244

Abstract: 32 TV power transistor
Contextual Info: 2SC4244 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4244 UHF TV Tuner RF Amplifier Applications • Low noise figure: NF = 4dB typ. · High power gain: Gpb = 17dB (typ.) · Excellent forward AGC characteristics Unit: mm Maximum Ratings (Ta = 25°C)

3N35

Contextual Info: TYPE 3N35 N-P-N GROWN JUNCTION SILICON TETRODE TRANSISTOR B U LL ET IN NO. DL-S 58961, A UG U ST 1958 Typical 20db Power Gain at 70 MC Hgh Cain at High Temperature Designed for High Frequency • IF Amplifiers RF Amplifiers * Video Amplifier! • Ofcillators

2SC4214

Contextual Info: 2SC4214 TO SH IBA 2SC4214 TOSHIBA TRANSISTOR SILICON NPN PLANAR TYPE Unit in mm UHF TV TUNER RF AMPLIFIER APPLICATIONS + 0.2 Low Noise Figure : NF = 2.8dB Typ. High Power Gain V(x; = 4.5V : Gpb = 15dB (Typ.) Excellent Forward AGC Characteristics —EE 1.90