MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
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2N2876
2N3137
2N3375
2N3553
2N3632
2N3733
2N3924
2N3926
2N3927
2N3948
MRF660
MRF485
KTC1969
MRF150MP
MRF496
2SC2029B
MRF648
MRF646
MRF429MP
MRF648 Data Sheet
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VRF2933
Abstract: LM3905 2204B ATC100B M177 SD2933 transistor fb "RF MOSFET" 300W arco 467 trimmer
Text: VRF2933 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF2933
150MHz
VRF2933
30MHz,
SD2933
LM3905
2204B
ATC100B
M177
SD2933
transistor fb
"RF MOSFET" 300W
arco 467 trimmer
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"RF MOSFET" 300W
Abstract: arco 467 trimmer 300WF
Text: VRF2933 50V 300W 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation
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VRF2933
150MHz
VRF2933
30MHz,
"RF MOSFET" 300W
arco 467 trimmer
300WF
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VRF148A
Abstract: 2204B M113 MRF148A 647s
Text: VRF148A 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF148A
175MHz
VRF148A
30MHz,
175MHz,
MRF148A
2204B
M113
MRF148A
647s
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VRF2933
Abstract: 300WPEP 2204b ATC100B LM3905 SD2933 M177
Text: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF2933
150MHz
VRF2933
30MHz,
SD2933
300WPEP
2204b
ATC100B
LM3905
SD2933
M177
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Untitled
Abstract: No abstract text available
Text: VRF148A PRELIMINARY 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF148A
175MHz
VRF148A
30MHz,
175MHz,
MRF148A
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Untitled
Abstract: No abstract text available
Text: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF148A
VRF148AMP
175MHz
VRF148A
30MHz,
175MHz,
MRF148A
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MRF148A
Abstract: 2204B M113 VRF148A 10WPEP 300WPEP 92010 647s
Text: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF148A
VRF148AMP
175MHz
VRF148A
30MHz,
175MHz,
MRF148A
MRF148A
2204B
M113
10WPEP
300WPEP
92010
647s
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VRF2933
Abstract: "RF MOSFET" 300W RF POWER VERTICAL MOSFET arco 467 trimmer U126 U126 D atc 100e Power Transformer 786
Text: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF2933
150MHz
VRF2933
30MHz,
SD2933
"RF MOSFET" 300W
RF POWER VERTICAL MOSFET
arco 467 trimmer
U126
U126 D
atc 100e
Power Transformer 786
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MRF148A
Abstract: No abstract text available
Text: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF148A
VRF148AMP
175MHz
VRF148A
30MHz,
175MHz,
MRF148A
MRF148A
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VRF2933
Abstract: No abstract text available
Text: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF2933
150MHz
VRF2933
30MHz,
SD2933
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VRF2933
Abstract: "RF MOSFET" 300W RF POWER VERTICAL MOSFET U126 D C8 15t
Text: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF2933
150MHz
VRF2933
30MHz,
SD2933
"RF MOSFET" 300W
RF POWER VERTICAL MOSFET
U126 D
C8 15t
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TRANSISTOR Z4
Abstract: CHIP TRANSISTOR omni spectra capacitor 15 F 50 VDC ATC100A MAPLST0822-002PP RO4350 640457-4 RF transistor gain 20dB
Text: RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V 4/14/05 MAPLST0822-002PP Preliminary Features Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase
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MAPLST0822-002PP
17GHz,
28Vdc
28dBm
-39dBc
11GHz
PFP-16
960MHz,
26Vdc,
960MHz
TRANSISTOR Z4
CHIP TRANSISTOR
omni spectra
capacitor 15 F 50 VDC
ATC100A
MAPLST0822-002PP
RO4350
640457-4
RF transistor gain 20dB
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Untitled
Abstract: No abstract text available
Text: VRF148A G VRF148AMP(G) 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF148A
VRF148AMP
175MHz
30MHz,
175MHz,
MRF148A
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omni spectra test fixture
Abstract: RF transistor gain 20dB
Text: RF Power Field Effect Transistor LDMOS, 800—1000 MHz, 2W, 26V 10/31/03 MAPLST0810-002PP Preliminary Features Q Q Q Q Q Package Style Designed for broadband commercial applications up to 1GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion
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MAPLST0810-002PP
960MHz,
26Vdc
960MHz)
omni spectra test fixture
RF transistor gain 20dB
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st 54003
Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection
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PD54003L-E
2002/95/EC
PD54003L-E
st 54003
TRANSISTOR AO SMD MARKING
J-STD-020B
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Untitled
Abstract: No abstract text available
Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection
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PD54003L-E
2002/95/EC
PD54003L-E
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RF FET transistor
Abstract: fet transistor rf
Text: MAPL-000822-002PP LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V Discontinued For Reference Only Product Image Designed for broadband commercial applications up to 2.2GHz • • • High gain, high efficiency and high linearity Ease of design for gain and insertion phase flatness
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MAPL-000822-002PP
17GHz,
28Vdc
28dBm
-39dBc
11GHz
960MHz,
26Vdc,
960MHz
QFN-16
RF FET transistor
fet transistor rf
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QFN-16
Abstract: No abstract text available
Text: MAPL-000822-002PP LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V M/A-COM Products Preliminary - Rev. 12/07 Product Image Designed for broadband commercial applications up to 2.2GHz • • • High gain, high efficiency and high linearity Ease of design for gain and insertion phase flatness
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MAPL-000822-002PP
17GHz,
28Vdc
28dBm
-39dBc
11GHz
960MHz,
26Vdc,
960MHz
QFN-16
QFN-16
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2sc4244
Abstract: 32 TV power transistor
Text: 2SC4244 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4244 UHF TV Tuner RF Amplifier Applications • Low noise figure: NF = 4dB typ. · High power gain: Gpb = 17dB (typ.) · Excellent forward AGC characteristics Unit: mm Maximum Ratings (Ta = 25°C)
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2SC4244
2sc4244
32 TV power transistor
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1206 philips
Abstract: No abstract text available
Text: Philips Sem iconductors Product specification Variable gain RF predriver amplifier DESCRIPTION SA910 PIN CONFIGURATION o o The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low*profile, surface mount power
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SA910
SA910
1206 philips
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2SC4244
Abstract: NPN TRANSISTOR SC-70
Text: TOSHIBA 2SC4244 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4244 UHF TV TUNER RF AMPLIFIER APPLICATIONS. Unit in mm 2.1 ±0.1 • Low Noise Figure : NF = 4dB Typ. • High Power Gain : Gpb = 17dB (Typ.) • Excellent Forward AGC Characteristics
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2SC4244
SC-70
2SC4244
NPN TRANSISTOR SC-70
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3N35
Abstract: No abstract text available
Text: TYPE 3N35 N-P-N GROWN JUNCTION SILICON TETRODE TRANSISTOR B U LL ET IN NO. DL-S 58961, A UG U ST 1958 Typical 20db Power Gain at 70 MC Hgh Cain at High Temperature Designed for High Frequency • IF Amplifiers RF Amplifiers * Video Amplifier! • Ofcillators
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2SC4214
Abstract: No abstract text available
Text: 2SC4214 TO SH IBA 2SC4214 TOSHIBA TRANSISTOR SILICON NPN PLANAR TYPE Unit in mm UHF TV TUNER RF AMPLIFIER APPLICATIONS + 0.2 Low Noise Figure : NF = 2.8dB Typ. High Power Gain V(x; = 4.5V : Gpb = 15dB (Typ.) Excellent Forward AGC Characteristics —EE 1.90
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2SC4214
2SC4214
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