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Catalog Datasheet	Type	Document Tags	PDF
2SC2509 Abstract: 10WPEP 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 121ID AC75 C8 15t Contextual Info: 2SC2509 S IL IC O N N P N 'E P IT A X IA L P L A N A R TYPE Unit in mm 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE P- FEATURES : _ § I 1 £ to 1 . Specified 12.5V, 28MHz Characteristics . \| irj H : Output Power : Po=10WpEP <	OCR Scan	2SC2509 2-30MHz 28MHz 10WpeP -30dB 121ID, 30lnA 10WPEP 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 121ID AC75 C8 15t	PDF
Contextual Info: T O SH IB A 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 10WpEP (Min.) Power Gain Gp = 17dB (Min.)	OCR Scan	2SC2395 28MHz 10WpEP 2-10H1A	PDF
2SC2395 Abstract: CC125 AN374 NC35 Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 2 ~ 3 0M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics Output Power : Po=10WpEP Minimum Gain : Gpe=17dB Efficiency nc=35%(Min.)	OCR Scan	2SC2395 10WpEP 28MHz -30dB 150pF 200pF 350pF 2SC2395 CC125 AN374 NC35	PDF
2SC2395 Abstract: E5OU 12ID 2SC239 Contextual Info: TOSHIBA 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 10WpEP (Min.) Power Gain Gp = 17dB (Min.)	OCR Scan	2SC2395 30MHz 28MHz 000MHz 001MHz 961001EAA2' 2SC2395 E5OU 12ID 2SC239	PDF
2SC2509 Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2509 Unit in mm 2 ' 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE p&6±gg 10.3 MAX, FEATURES : . Specified 12.5V, 28MHz Characteristics : Output Power : P o=10WpEP : M i n i m u m Gain : G p e = L^dB	OCR Scan	2SC2509 30MHz 28MHz 10WpEP 2SC2509	PDF
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b DE~J TDTTESD 00D7S4b □ 56C 0 7 5 4 6 <DIS C R E T E/ OP TO r~33-°? o SILICON NPN EPITA XIA L PLANAR TYPE Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE) y _ § IS	OCR Scan	00D7S4b 28MHz -30dB 400pF 200pF 121ID,	PDF
CAPACITOR 330 NF Abstract: PD85025-E ATC capacitor 100b 470jw murata CAPACITOR grm32nf51e106za01b 334k X7R 50 PD85025 102J DB-85025-520 EEVHB1V100P EXCELDRC35C Contextual Info: DB-85025-520 RF power amplifier using PD85025-E for UHF OFDM radio Features • Excellent thermal stability ■ Frequency: 340 - 520 MHz ■ Supply voltage: 15 V ■ Output power: 10 WPEP ■ Gain: 19 ± 1 dB ■ Efficiency: 45 % - 52 % ■ Load mismatch: 20:1	Original	DB-85025-520 PD85025-E DB-85025-520 CAPACITOR 330 NF ATC capacitor 100b 470jw murata CAPACITOR grm32nf51e106za01b 334k X7R 50 PD85025 102J EEVHB1V100P EXCELDRC35C	PDF
Contextual Info: VRF148A PRELIMINARY 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	VRF148A 175MHz VRF148A 30MHz, 175MHz, MRF148A	PDF
Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	VRF148A VRF148AMP 175MHz VRF148A 30MHz, 175MHz, MRF148A	PDF
MRF148A Abstract: 2204B M113 VRF148A 10WPEP 300WPEP 92010 647s Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	VRF148A VRF148AMP 175MHz VRF148A 30MHz, 175MHz, MRF148A MRF148A 2204B M113 10WPEP 300WPEP 92010 647s	PDF
MRF148A Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	VRF148A VRF148AMP 175MHz VRF148A 30MHz, 175MHz, MRF148A MRF148A	PDF
2SC2509 Abstract: AC75 Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b DeTJiG^SSD 56C <DIS CR ET E/ OP TO 07546 D D D 7 S 4t. □ r - 3 3 ~ ° ? o 2SC2509 S IL IC O N NPN E P IT A X IA L P LA N A R T Y P E _ Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE)	OCR Scan	2SC2509 2-30MHz 28MHz 10WpeP -30dE 400pF 200pF 30lnA lllllltlllllIIII11I1IIIIEII1II11IIlllilIl llllllllII11III1LLIIMIEllllllllllIlltllEl AC75	PDF
VRF148A Abstract: 2204B M113 MRF148A 647s Contextual Info: VRF148A 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	VRF148A 175MHz VRF148A 30MHz, 175MHz, MRF148A 2204B M113 MRF148A 647s	PDF
Contextual Info: VRF148A G VRF148AMP(G) 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	VRF148A VRF148AMP 175MHz 30MHz, 175MHz, MRF148A	PDF