RF AMPLIFIER MARKING A04 Search Results

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190

MAR-4

Abstract: mmic mar-4 MAR4
Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High IP3, 25.5 dBm typ. • Low noise figure, 7.0 dB typ. • Exact foot print substitute for MSA-0485 • Cascadable, unconditionally stable • Aqueous washable • Protected by US Patent 6,943,629

marking A04

Abstract: A04 monolithic amplifier AF190 ram-4 RF AMPLIFIER marking A04 MMIC Amplifier A04
Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629

A04 monolithic amplifier

Abstract: marking A04 RF AMPLIFIER marking A04 monolithic amplifier A04 AF190 MMIC Amplifier A04 ram-4 A04 RF amplifier
Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629

MMIC MAR-4

Abstract: A04 monolithic amplifier MAR-4SM MMIC marking A04 monolithic amplifier MAR MAR-4SM MSA-0485 VV105 WW107 MAR-4
Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High IP3, 25.5 dBm typ. • Low noise figure, 7.0 dB typ. • Exact foot print substitute for MSA-0485 • Cascadable, unconditionally stable • Aqueous washable • Protected by US Patent 6,943,629

MRF9030NR1

Abstract: marking z17 100B470JP
Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

MRF9060L

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

Contextual Info: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors

93F2975

Abstract: 865 marking amplifier MRF9120LR3
Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

VIPer 32

Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17
Contextual Info: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors

MRF9060MR1

Abstract: 93F2975
Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

MRF9030N

Abstract: wb1 99 MRF9030NBR1 A113 MRF9030NR1 marking wb2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030NR1 MRF9030NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

93F2975

Abstract: marking 865 amplifier 100B120JP 865 marking amplifier
Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

TO-270-2

Contextual Info: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

100B270JP500X

Abstract: NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier
Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MARKING WB1

Abstract: 945 mosfet n 945 TRANSISTOR marking us capacitor pf l1 marking Z4 ATC100B470JT500XT MRF9060 MRF9060LSR1 MRF9060S T491D106K035AT
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9060LSR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

MARKING WB1

Abstract: ATC100B0R5BT500XT ATC100B470JT500XT MRF9060 MRF9060LR1 MRF9060S T491D106K035AT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060 - 2 Rev. 11, 9/2008 RF Power Field Effect Transistor MRF9060LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device