R10 TRANSISTOR Search Results

R10 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

R10 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BY206 diode Abstract: mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589 Text: Design Note 31 Issue 2 November 1995 Design Note 31 Issue 2 November 1995 High Voltage Generation for Xenon Tube Applications R24 T1 D4 C13 C12 C10 C11 T2 TH1 R23 D5 D6 +12V R7 C2 R10 R11 R13 R1 R4 Introduction The ignition timing lights in common use range from simple neon to complex	Original	PDF	FX1589, 1000V1 ZTX214C ZTX384C ZVN2110A ZTX300 BY206 diode mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589
220uF Abstract: dual 2N3904 NPN Transistor 4k resistor 220uf, 25v electrolytic capacitor Q2 220uF 10v 220uF 10v 2N3904 capacitor c1 220uF 1k ohm resistor capacitor 220uf/35v Text: CPE modem 24V INPUT C2 1uF 10V 13 R1 200k 2 20 VP C4 220uF 35V CA D1 CMPSH-3 19 VL BST ILIM COMP C1 8.2nF DH 18 17 16 LX C3 0.1uF T1 1:1 Lpri = 27.2uH VP3-0084 N1A 1/2 NDS 9956A R2 22 1,2 DL VL U1 MAX1865T R10 100k GND OUT 1 POK FB B2 15 14 N1B 3,4, 9,10 11,12	Original	PDF	220uF VP3-0084 MAX1865T 4700pF 500mA 2N3904 4700pFC11 220uF dual 2N3904 NPN Transistor 4k resistor 220uf, 25v electrolytic capacitor Q2 220uF 10v 220uF 10v 2N3904 capacitor c1 220uF 1k ohm resistor capacitor 220uf/35v
Untitled Abstract: No abstract text available Text: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This	Original	PDF	27-Apr-2011
Untitled Abstract: No abstract text available Text: R_10032 CA-330-11; LDMOS bias module Rev. 1.0 — 24 July 2012 Report Document information Info Content Keywords LDMOS, bias Abstract This report describes a bias module for LDMOS RF power transistors. It provides a low-noise bias supply, temperature compensation, and a very	Original	PDF	CA-330-11;
CBCX69 Abstract: CBCX68 marking code r10 surface mount diode CBCX69-16 Text: CBCX68 SERIES NPN CBCX69 SERIES PNP SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBCX68 and CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar	Original	PDF	CBCX68 CBCX69 OT-89 100mA 500mA CBCX68, CBCX69) marking code r10 surface mount diode CBCX69-16
jrc 78L08 Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08 Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN	Original	PDF	AN10923 BLF6G15L-250PBRN BLF6G15L-250PBRN jrc 78L08 RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
AAT2823 Abstract: AAT2823IBK-T1 AAT2823IBK-1-T1 AAT2823-1 AAT2822-AAT2825 AAT2822IBK-T1 3S10P AAT2824-1 Sc70-6 marking c14 R5464K Text: PRODUCT DATASHEET AAT2822/23/24/25 SystemPowerTM TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer General Description Features The AAT2822-AAT2825 family of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor TFT liquid-crystal display (LCD). The AAT2822 includes a triple-output DC-DC	Original	PDF	AAT2822/23/24/25 AAT2822-AAT2825 AAT2822 AAT2823 AAT2823IBK-T1 AAT2823IBK-1-T1 AAT2823-1 AAT2822IBK-T1 3S10P AAT2824-1 Sc70-6 marking c14 R5464K
202319A Abstract: No abstract text available Text: EVALUATION BOARD DATA SHEET EV183 Evaluation Board for the AAT2822/2823/2824/2825 TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer Introduction The AAT282x family AAT2822, AAT2823, AAT2824, AAT2825 of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor (TFT) liquid-crystal display (LCD). The AAT282x family	Original	PDF	EV183 AAT2822/2823/2824/2825 AAT282x AAT2822, AAT2823, AAT2824, AAT2825) AAT282x-1 202319A
philips Trimmers 60 pf Abstract: trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor	Original	PDF	BLF278 SC08a OT262A1 philips Trimmers 60 pf trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun
DIODE smd marking A4 SOT363 Abstract: diode ja GRM188R61E104K AAT2823-1 pwm marking code c9 sc70 Text: PRODUCT DATASHEET AAT2822/23/24/25 SystemPowerTM TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer General Description Features The AAT2822-AAT2825 family of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor TFT liquid-crystal display (LCD). The AAT2822 includes a triple-output DC-DC	Original	PDF	AAT2822/23/24/25 DIODE smd marking A4 SOT363 diode ja GRM188R61E104K AAT2823-1 pwm marking code c9 sc70
MRF857S Abstract: motorola MRF857s mrf857 transistor motorola 359 MOTOROLA ELECTROLYTIC CAPACITOR MMBT2222ALT1 TL11 TL12 TL13 TL15 Text: MOTOROLA Order this document by MRF857/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF857S Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the	Original	PDF	MRF857/D MRF857S MRF857S motorola MRF857s mrf857 transistor motorola 359 MOTOROLA ELECTROLYTIC CAPACITOR MMBT2222ALT1 TL11 TL12 TL13 TL15
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF857/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF857 MRF857S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the	Original	PDF	MRF857/D MRF857 MRF857S MRF857 MRF857/D*
thermistor 100k Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E Text: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,	Original	PDF	AN-090 SLD-1026Z EAN-105860 thermistor 100k 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
R5C DIODE Abstract: 75kv diode V12-V1 SMT 0805 IRL3103S IRL3303 IRU3033 IRU3033CS MTP3055 P55C Text: Data Sheet No. PD94147 IRU3033 8-PIN PWM SWITCHER AND LINEAR CONTROLLER IC FEATURES DESCRIPTION LDO Controller allows the use of a low cost pass transistor for the I/O supply 8-Pin SOIC combines switching and linear controller Internal pre-regulator eliminates cross talk	Original	PDF	PD94147 IRU3033 100ns) IRU3033 R5C DIODE 75kv diode V12-V1 SMT 0805 IRL3103S IRL3303 IRU3033CS MTP3055 P55C

MRF861 Abstract: transistor 470 Text: MOTOROLA Order this document by MRF861/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF861 Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the	Original	PDF	MRF861/D MRF861 MRF861/D* MRF861 transistor 470
MRF862 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF862/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF862 Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the	Original	PDF	MRF862/D MRF862 MRF862/D* MRF862
balun 50 ohm Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.	Original	PDF	VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 balun 50 ohm 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 trifilar
MC1391P Abstract: MPSU04 motorola AN 240 Phase control rccb MC1391 MJ105 343 flyback IC msr 33k Text: Order this document by MC1391/D MC1391 TV Horizontal Processor • • • • • • • • TV HORIZONTAL PROCESSOR Preset Hold Control Capability SEMICONDUCTOR TECHNICAL DATA ±300 Hz Typical Pull–In Linear Balanced Phase Detector Variable Output Duty Cycle for Driving Tube or Transistor	Original	PDF	MC1391/D MC1391 MC1391P MC1391/D* MC1391P MPSU04 motorola AN 240 Phase control rccb MC1391 MJ105 343 flyback IC msr 33k
CW 7805 Abstract: CW 7805 regulator ERA-H-30275-4-1-2304 LM7805 7805 datasheet DD 127 D TRANSISTOR free download voltage regulator 7805 data sheet LM 7805 DATA SHEET uA 7805 365 pF variable capacitor Text: PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and	Original	PDF	PTF211802 PTF211802 CW 7805 CW 7805 regulator ERA-H-30275-4-1-2304 LM7805 7805 datasheet DD 127 D TRANSISTOR free download voltage regulator 7805 data sheet LM 7805 DATA SHEET uA 7805 365 pF variable capacitor
Untitled Abstract: No abstract text available Text: Document Number: MMG2001NT1 Rev. 6, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology	Original	PDF	MMG2001NT1
VRF157FL Abstract: 2204B MRF157 RL1009-5820-97-D1 Dielectric Laboratories 117nH arco TRIMMER capacitor 262 10E112 Text: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.	Original	PDF	VRF157FL 80MHz VRF157FL 30MHz, MRF157 VRF157Fng 2204B MRF157 RL1009-5820-97-D1 Dielectric Laboratories 117nH arco TRIMMER capacitor 262 10E112
c38 transistor Abstract: capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 17 Philips Semiconductors Product specification VHF push-pull power MOS transistor	Original	PDF	BLF378 SC08a OT262A1 c38 transistor capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor
1.5SMC27AT3G Abstract: No abstract text available Text: Document Number: MMG1001NT1 Rev. 8, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology	Original	PDF	MMG1001NT1 DataMMG1001NT1 1.5SMC27AT3G
sun R056 Abstract: skf 4 F 06 ZWS 100 E ZWS 6 E z300 20k zener 2r7 capacitor 3k3 Z300 6k8 1w KKE11 Text: Ce me nt Coate d AC KKA, KKE PA C SKF WSZ Z300 ZWK ZBS ZWS w w w. v i s h a y. c o m Selector Guide industrial wirewound resistors r e s i s t i v e p r o d uc t s V I S HAY INTERTE C HNOLO G Y , IN C . Industrial Wirewound Resistors Cement Coated Features	Original	PDF	VMN-SG2015-0704 sun R056 skf 4 F 06 ZWS 100 E ZWS 6 E z300 20k zener 2r7 capacitor 3k3 Z300 6k8 1w KKE11

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R10 TRANSISTOR Search Results

R10 TRANSISTOR Result Highlights (5)

R10 TRANSISTOR Datasheets Context Search

BY206 diode

220uF

Untitled

Untitled

CBCX69

jrc 78L08

AAT2823

202319A

philips Trimmers 60 pf

DIODE smd marking A4 SOT363

MRF857S

Untitled

thermistor 100k

R5C DIODE

MRF861

MRF862

balun 50 ohm

MC1391P

CW 7805

Untitled

VRF157FL

c38 transistor

1.5SMC27AT3G

sun R056