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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0100 Rev.1.00 May 11, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0631JPE R07DS0341EJ0100 AEC-Q101 PRSS0004AE-B

    rjk0631

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0100 Rev.1.00 May 11, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0631JPE AEC-Q101 R07DS0341EJ0100 PRSS0004AE-B rjk0631