Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0200 Rev.2.00 May 23, 2013 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive
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RJK0631JPE
R07DS0341EJ0200
AEC-Q101
PRSS0004AE-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0300 Rev.3.00 Jul 24, 2013 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive
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RJK0631JPR
R07DS0879EJ0300
AEC-Q101
PRSS0003AD-A
O-220FM)
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0300 Rev.3.00 Jul 24, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive
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RJK0631JPD
R07DS0252EJ0300
AEC-Q101
PRSS0004ZD-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0100 Rev.1.00 May 11, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive
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RJK0631JPE
R07DS0341EJ0100
AEC-Q101
PRSS0004AE-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0300 Rev.3.00 Jul 24, 2013 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive
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RJK0631JPE
R07DS0341EJ0300
AEC-Q101
PRSS0004AE-B
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RJK0631
Abstract: RJK0631JPR
Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0100 Rev.1.00 Sep 19, 2012 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 m typ. Capable of 4.5 V gate drive
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RJK0631JPR
AEC-Q101
R07DS0879EJ0100
PRSS0003AD-A
O-220FM)
RJK0631
RJK0631JPR
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0200 Rev2.00 May 23, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ
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RJK0631JPD
R07DS0252EJ0200
AEC-Q101
PRSS0004ZD-C
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RJK0631
Abstract: RJK0631JPD PRSS0004ZD-C
Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0100 Rev.1.00 Feb 03, 2011 Features • For Automotive application Low on-resistance : RDS on = 12 m typ. Capable of 4.5 V gate drive
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RJK0631JPD
R07DS0252EJ0100
AEC-Q101
PRSS0004ZD-C
RJK0631
RJK0631JPD
PRSS0004ZD-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0100 Rev.1.00 Feb 03, 2011 Features • For Automotive application Low on-resistance : RDS on = 12 m typ. Capable of 4.5 V gate drive
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Original
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PDF
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RJK0631JPD
R07DS0252EJ0100
AEC-Q101
PRSS0004ZD-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0200 Rev.2.00 May 23, 2013 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive
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Original
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RJK0631JPR
R07DS0879EJ0200
AEC-Q101
PRSS0003AD-A
O-220FM)
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rjk0631
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0100 Rev.1.00 May 11, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive
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RJK0631JPE
AEC-Q101
R07DS0341EJ0100
PRSS0004AE-B
rjk0631
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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R2A11301FT
Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV
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/533MHz
BGA-832
BGA-472
BGA-429
BGA-720
BGA-653
R2A11301FT
SH7766
R2A25108KFP
2SC5664
PowerVR SGX530
PowerVR SGX540
car ecu wiring system service manual
R2A25104KFP
V850E2 fx4
DJ4 renesas
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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