Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJK0631 Search Results

    SF Impression Pixel

    RJK0631 Price and Stock

    Renesas Electronics Corporation RJK0631JPD-01

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics RJK0631JPD-01 10,000
    • 1 -
    • 10 -
    • 100 $1.62
    • 1000 $1.359
    • 10000 $1.359
    Buy Now

    RJK0631 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0200 Rev.2.00 May 23, 2013 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original
    PDF RJK0631JPE R07DS0341EJ0200 AEC-Q101 PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0300 Rev.3.00 Jul 24, 2013 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original
    PDF RJK0631JPR R07DS0879EJ0300 AEC-Q101 PRSS0003AD-A O-220FM)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0300 Rev.3.00 Jul 24, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original
    PDF RJK0631JPD R07DS0252EJ0300 AEC-Q101 PRSS0004ZD-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0100 Rev.1.00 May 11, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original
    PDF RJK0631JPE R07DS0341EJ0100 AEC-Q101 PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0300 Rev.3.00 Jul 24, 2013 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original
    PDF RJK0631JPE R07DS0341EJ0300 AEC-Q101 PRSS0004AE-B

    RJK0631

    Abstract: RJK0631JPR
    Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0100 Rev.1.00 Sep 19, 2012 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features •     For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 m typ. Capable of 4.5 V gate drive


    Original
    PDF RJK0631JPR AEC-Q101 R07DS0879EJ0100 PRSS0003AD-A O-220FM) RJK0631 RJK0631JPR

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0200 Rev2.00 May 23, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ


    Original
    PDF RJK0631JPD R07DS0252EJ0200 AEC-Q101 PRSS0004ZD-C

    RJK0631

    Abstract: RJK0631JPD PRSS0004ZD-C
    Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0100 Rev.1.00 Feb 03, 2011 Features •     For Automotive application Low on-resistance : RDS on = 12 m typ. Capable of 4.5 V gate drive


    Original
    PDF RJK0631JPD R07DS0252EJ0100 AEC-Q101 PRSS0004ZD-C RJK0631 RJK0631JPD PRSS0004ZD-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0100 Rev.1.00 Feb 03, 2011 Features •     For Automotive application Low on-resistance : RDS on = 12 m typ. Capable of 4.5 V gate drive


    Original
    PDF RJK0631JPD R07DS0252EJ0100 AEC-Q101 PRSS0004ZD-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0200 Rev.2.00 May 23, 2013 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original
    PDF RJK0631JPR R07DS0879EJ0200 AEC-Q101 PRSS0003AD-A O-220FM)

    rjk0631

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0100 Rev.1.00 May 11, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original
    PDF RJK0631JPE AEC-Q101 R07DS0341EJ0100 PRSS0004AE-B rjk0631

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original
    PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    R2A11301FT

    Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
    Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV


    Original
    PDF /533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original
    PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram