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    RQA0011

    Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS WSON0504-2: R07DS0095EJ0800 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS RQA0004 PG890 RQA0011DNSTB-E PDF

    R07DS0095EJ0800

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS R07DS0095EJ0800 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0011â R07DS0095EJ0800 PDF