R-MOBILE A1 Search Results

sdram cmos

Abstract: K4S28163LD
Contextual Info: Mobile SDRAM VDD 2.5V, VDDQ 1.8V & 2.5V K4S28163LD-RF(R) Preliminary CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 70°C Operation) Revision 0.6 October 2001 Rev. 0.6 Oct. 2001 Mobile SDRAM (VDD 2.5V, VDDQ 1.8V & 2.5V) K4S28163LD-RF(R) Preliminary

LP SDRAM

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-RF(R) Preliminary CMOS SDRAM 4Mx16 Mobile SDRAM (TCSR & PASR support, -25°C ~ 70°C Operation) Revision 0.3 October 2001 Rev. 0.3 Oct. 2001 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-RF(R) Preliminary

1rfu 210

Abstract: K4S64163LF-GF pasr
Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-GF(R) Preliminary CMOS SDRAM 4Mx16 Mobile SDRAM 52CSP (TCSR & PASR support, -25°C ~ 70°C Operation) Revision 0.0 October 2001 Rev. 0.0 Oct. 2001 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-GF(R)

mobile dram

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S28163LD-RF(R) CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 70°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S28163LD-RF(R) CMOS SDRAM Revision History

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-GF(R) CMOS SDRAM 4Mx16 Mobile SDRAM 52CSP (TCSR & PASR, -25°C ~ 70°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-GF(R) CMOS SDRAM Revision History

64Mb samsung SDRAM

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-RF(R) CMOS SDRAM 4Mx16 Mobile SDRAM (TCSR & PASR, -25°C ~ 70°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-RF(R) CMOS SDRAM Revision History

sdram 4 bank 4096 16

Abstract: K4S56163LC K4S56163LC-RF
Contextual Info: Mobile DRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RF(R) CMOS SDRAM 16Mx16 Mobile DRAM (TCSR & PASR option support) Revision 0.4 December 2001 Rev. 0.4 Dec. 2001 Mobile DRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RF(R) CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target)

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RF(R) CMOS SDRAM 16Mx16 Mobile SDRAM (TCSR & PASR option support) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RF(R) CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target)

hy power 38

Contextual Info: January 2007 HYB18L256160BCX-7.5 HYB18L256160BFX-7.5 HYE18L256160BCX-7.5 HYE18L256160BFX-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Mobile-RAM Data Sheet R ev . 1 . 11 HY[B/E]18L256160B[C/F]X-7.5 256-Mbit Mobile-RAM HYB18L256160BCX-7.5 HYB18L256160BFX-7.5 HYE18L256160BCX-7.5 HYE18L256160BFX-7.5

INTEL 845 MOTHERBOARD CIRCUIT diagram

Abstract: PC MOTHERBOARD intel 845 circuit diagram mobile MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD schematic CK100 pnp 845 chipset motherboard schematic diagram 845 MOTHERBOARD CIRCUIT diagram pentium III motherboard scheme intel 845 motherboard schematic diagram 440MX
Contextual Info: R LV/ULV Mobile Intel Pentium® lll Processor-M and LV/ULV Mobile Intel® Celeron® Processor 0.13 µ / Intel® 440MX Chipset Platform Design Guide April 2002 Order Number: 251012-001 ® ® LV/ULV Mobile Intel Pentium lll Processor-M and LV/ULV Mobile

Contextual Info: [ /Title IPM6 220 /Subjec t (MultiOutput System Electro nics Regula tor for Mobile PCs) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, MultiOutput System Electro nics Regula tor for Mobile PCs) /Creato r () /DOCI NFO IPM6220 TM Data Sheet

82845MP

Abstract: INTEL 845 MOTHERBOARD CIRCUIT diagram 845mz 82801CAM S1m aa25 DDR200 DDR266 PC2100 ac15 s1m ICH3-M
Contextual Info: R Intel 845 Family Chipset-Mobile: 82845MP/82845MZ Chipset Memory Controller Hub Mobile MCH-M Datasheet April 2002 Order Number: 250687-002 ® Intel 82845MP/82845MZ Chipset-Mobile (MCH-M) R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

Contextual Info: January 2007 HYB18L256169BFX-7.5 HYE18L256169BFX-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM RoHS Compliant Product Data Sheet R ev . 1 . 01 HY[B/E]18L256169BFX-7.5 256-Mbit Mobile-RAM HYE18L256169BFX-7.5 Revision History: 2007-01 , Rev. 1.01 Page

qimonda

Abstract: Qimonda AG HYB25L256160AC HYB25L256160AF HYE25L256160AC HYE25L256160AF
Contextual Info: Dec. 2006 HY[B/E]25L256160AC HY[B/E]25L256160AF DRAMs for Mobile Applications 256-MBit Mobile-RAM R oH S c o mp l i a nt Internet Data Sheet R ev . 1 . 41 HY[B/E]25L256160A[F/C]–7.5 256MBit Mobile-RAM HY[B/E]25L256160AC, HY[B/E]25L256160AF Revision History: 2006-12, Rev. 1.41

BFR15

Contextual Info: K4S64163LF-R B F/R CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

Contextual Info: K4S28163LD-R B F/R CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S28163LD-R(B)F/R CMOS SDRAM 2M x 16Bit x 4 Banks Mobile sDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4M28163LF

Contextual Info: K4M28163LF - R B E/N/S/C/L/R Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits,

K4M28163LF

Contextual Info: K4M28163LF - R B E/N/S/C/L/R Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits,

Contextual Info: K4M28163LF - R B E/N/S/C/L/R Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits,

Contextual Info: January 2007 HYB18T1G400AF L HYB18T1G800AF(L) HYB18T1G160AF DRAMs for Mobile Applications DDR2 SDRAM 256-MBit Mobile-RAM R oH S c o mp l i a nt Internet Data Sheet R ev . 1 . 31 Internet Data Sheet, HYB18T1G[40/80/16]0AF(L)–[3S/3.7/5] 1-Gbit DDR2 SDRAM

Contextual Info: K4M28163PD-R B G/S CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 1.8V/1.8V, TCSR & PASR & DS) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4M28163PD-R(B)G/S CMOS SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply.

K4S56163LC

Contextual Info: K4S56163LC-R B G/S CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)G/S CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S64163LF

Contextual Info: K4S64163LF-G A F/R CMOS SDRAM 4Mx16 Mobile SDRAM 52CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-G(A)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 52CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

EN61010-1

Abstract: EN61326-1
Contextual Info: Protocol Test Racal Instruments Wireless Solutions 6402 AIME CDMA2000 Protocol Analysis Test System • Protocol Test System for CDMA2000 1x and EV-DV Mobile stations • Applications in R&D, software development, mobile integration, regression testing, conformance testing