R 824 TRANSISTOR Search Results

RAYTHEON

Abstract: LL1608-FH5N6S RMPA0913C-58
Contextual Info:
  R aytheon Commercial E lectronics RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier Description The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/ CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip

SOT262

Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
Contextual Info: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348

BGY95B

Abstract: IG17 BGY95A
Contextual Info: BGY95A/B J V UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF am plifier module designed prim arily fo r mobile transm itting equipment operating from a nominal 7.5 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,

BFG87

Abstract: BSF17 BSF17W Philips BFQ bipolar transistor blt81 driver circuit BGY46B BFE505 T119 Transistor BFQ43 bgy132
Contextual Info: Philips Sem iconductors Selection guide Selection list GENERAL For further information, refer to Data Handbook SC08a “R F Bipolar transistors", to Data Handbook SC09 “R F Power Modules”and to Data Handbook SC14 “R F Wideband Transistors, Video Transistors and Modules"

transistor packing code M.R

Abstract: SOT-25 RF detect TS823 TS825
Contextual Info: TAIWAN E SEMICONDUCTOR pb RoHS CO M PLIANCE TS823/824/825 Series Microprocessor Supervisory Circuit with Watchdog Timer & Manual Reset SOT-25 5 4 1 23 General Description The TS823/824/825 fam ily allows the user to customize the CPU monitoring function without any external

RM912

Contextual Info: RM912 Power Amplifier Module, 3–4 Volts, for CDMA/AMPS 824–849 MHz Distinguishing Features The RM912 dual-mode Code Division Multiple Access (CDMA)/Advanced Mobile Phone Service (AMPS) Power Amplifier is a fully matched 6-pin surface mount module designed for mobile units operating in the 824-849 MHz cellular bandwidth.

TH653

Contextual Info: Darlington Transistors Darlington Pow er T ra n s is to rs T0-220 bipolar transistors Type No. Electrical Characteristics Absolute Maximum Ratings Vcbo E IA J VCEO V ebo [V ] 2SD1022 100 100 1023 200 200 1024 100 100 1025 200 200 1026 100 100 200 200 500 400

N-Channel, Dual-Gate FET

Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
Contextual Info: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.

BGY95A

Abstract: MCA8 BGY95B ca712 p SOT200 BGY95 bs33
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3^31 QQ3G247 bl2 I IAPX BGY95A/B J UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 7.5 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,

Contextual Info: N AMER PHILIPS/DISCRETE b^E I> • APX bbS3T31 QD3D247 bl2 BGY95A/B UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 7.5 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,

SKY85703

Abstract: SKY77758
Contextual Info: New Products Spring 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 5 Smart Energy Solutions . . . . . . . . . . . . . . . . . . 7

Contextual Info: ANALOG DEVICES FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 |aA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V / jas No Phase Reversal APPLICATIONS Photo Diode Preamplifier

bgy 53

Abstract: MCA7
Contextual Info: BGY96A/B UHF AMPLIFIER MODULE The BGY96 is a three-stage UHF am plifier module designed prim arily fo r mobile transm itting equipment operating from a nominal 9.6 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,

Contextual Info: N AMER PHILIPS/DISCRETE APX bb53T31 0Q3055b bSS BGY96A/B b'lE D UHF AMPLIFIER MODULE The BGY96 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 9.6 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,

SN83

Abstract: d603
Contextual Info: RMPA0959 CDMA and CDMA2000-1X PowerEdge Power Amplifier Module General Description Features The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a

CDMA2000-1X

Abstract: CDMA2000-1XRTT RMPA0959 G-507 D603
Contextual Info: RMPA0959 CDMA and CDMA2000-1X PowerEdge Power Amplifier Module Features General Description • Single positive-supply operation with low power and shutdown modes ■ 39% CDMA efficiency at +28dBm average output power ■ 53% AMPS mode efficiency at +31dBm output power

VS1M

Abstract: BGY96A BGY96B
Contextual Info: N AMER PHILIPS /DI SCRETE b'ìE D • bbS3T31 0D3G5Sb bSS ■ APX BGY96A/B JL UHF AMPLIFIER MODULE The BG Y96 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 9.6 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,

CDMA2000-1X

Abstract: CDMA2000-1XRTT RMPA0959
Contextual Info: RMPA0959 CDMA and CDMA2000-1X Power Amplifier Module General Description Features The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a

RM806-14

Abstract: IS-136 RM806
Contextual Info: RM806 Power Amplifier Module 3–4 V for TDMA AMPS 824–849 MHz The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount module designed for Time Division Multiple Access (TDMA) and Advanced Mobile Phone Service (AMPS) mobile units operating in the 824-849 MHz cellular bandwidth.

IS-136

Abstract: RM806 ESD process
Contextual Info: RM806 Power Amplifier Module for TDMA AMPS 824–849 MHz The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing Features module designed for Time Division Multiple Access (TDMA) and Advanced Mobile • Low voltage positive bias supply

IS-136

Abstract: RM806
Contextual Info: RM806 Power Amplifier Module for TDMA AMPS 824–849 MHz The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing Features module designed for Time Division Multiple Access (TDMA) and Advanced Mobile • Low voltage positive bias supply

PID code for DC Motor control lpc1768

Abstract: ARM LPC1768 assembly codes LPC1768 21041AA lpc1768 qei encoder language example sch 5127 RBS ericsson software UM10360 LT 5212 lpc23xx
Contextual Info: D D R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D User manual D Rev. 00.07 — 31 July 2009 R R R LPC17xx User manual D D D UM10360 D FT FT A A R R D D D R A FT D R A Document information

BGY116a

Abstract: fo-57C BGY114E
Contextual Info: 67 RF/Microwave Devices RF Power Am plifier M odules co n t. The P h ilip s range in clu d e s RF p o w er m o d u le s inte nded p rim a rily for V H F/U H F m o b ile radio sy stem s and U H F/SH F ce llu la r radio. Th ese m o d u le s save co n sid e ra b le de sign effort and

RM806-14

Abstract: IS-136 RM806
Contextual Info: RM806 Power Amplifier Module for TDMA AMPS 824–849 MHz The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing Features module designed for Time Division Multiple Access (TDMA) and Advanced Mobile • Low voltage positive bias supply