R 2.8 DIODE Search Results

STP4NB50

Abstract: STP4NB50FP
Contextual Info: STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STP4NB50 STP4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STP4NB50 STP4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: STSJ2NM60 N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh POWER MOSFET • ■ ■ ■ ■ ■ TYPE VDSS R DS on ID STSJ2NM60 600 V < 3.2 Ω 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

Contextual Info: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

P4NB50FP

Abstract: P4NB50 SMPS SCHEMATIC DIAGRAM STP4NB50 STP4NB50FP p4nb5
Contextual Info: STP4NB50 STP4NB50FP  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE ST P4NB50 ST P4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP 4N B50 S TP 4N B50FP V dss R d S( o i i ) Id 500 V 500 V < 2.8 Q. < 2.8 Q. 3.8 A 2.5 A • TYPICAL RDS(on) =2.5

BAT42WS

Abstract: BAT43WS BAT54WS
Contextual Info: BAT42WS BAT43WS BAT54WS DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE - 30 Volts CURRENT - 0.2 Ampere SOD-323 FEATURES * * * * .110 2.8 .090(2.3) .071(1.8) .063(1.6) For general purpose applications

BZT ZENER

Abstract: BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52-C47S zener 6v8
Contextual Info: BZT52C2V4S THRU BZT52C75S DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT ZENER DIODES SOD-323 FEATURES * * * * .110 2.8 .090(2.3) .071(1.8) .063(1.6) Planar Die construction Zener Voltages from 2.4V - 75V 200mW Power Dissipation

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5UM-18A HIGH-SPEED SWITCHING USE FS5UM-18A OUTLINE DRAWING Dimensions in mm LU U q w Q w V d s s .900V r q w e r GATE DRAIN SOURCE DRAIN rDS ON (MAX) .2.8Í1

028N08N

Abstract: IPP02CN08N IPP028N08N3 JESD22 PG-TO220-3
Contextual Info: IPP028N08N3 G IPI028N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 2.8 mΩ ID 100 A • Very low on-resistance R DS(on) previous engineering

Contextual Info: STB4NB50 N - CHANNEL 500V - 2.5Û - 3.8A - D2PAK/I2PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 4N B50 500 V < 2.8 a 3.8 A • . . . . TYPICAL R D S (on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

2306 mosfet

Abstract: s1815 WT2306 WT-2306 wt2306s06 wt sot23
Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 2.8 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low R DS ON R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package

Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 2.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V

Hitachi DSA002789

Contextual Info: HVC350B Variable Capacitance Diode for VCO ADE-208-414 Z Rev 0 Features • • • • High capacitance ratio. (n = 2.8.min) Low series resistance. (r s = 0.5Ωmax) Good C-V linearity. Ultra small Flat Package (UFP) is suitable for surface mount design.

FS10KM-10

Abstract: 710a
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 O UTLINE DRAW ING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 « r Vd s s . 500V rDS ON (MAX) .0.90Í2

Hitachi DSA002788

Contextual Info: HVU350B Variable Capacitance Diode for VCO ADE-208-430A Z Rev 1 Features • • • • High capacitance ratio. (n = 2.8.min) Low series resistance. (r s = 0.5Ωmax) Good C-V linearity. Ultra small Resin Package (URP) is suitable for surface mount design.

Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 2.8 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70KMJ-2 HIGH-SPEED SWITCHING USE FS70KMJ-2 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • 4V D R IV E • VDSS . •100V • rDS ON (MAX) .

FS22SM10

Abstract: FS22SM-10 ZD 103 ma
Contextual Info: MITSUBISHI Neh POWER MOSFET FS22SM-10 HIGH-SPEED SWITCHING USE FS22SM-10 OUTLINE DRAWING Dimensions in mm r- 4.5 f5.9MAX , <?3.2 m ± te f i t 4.4 Zi s 545 • Voss . 500V . 5.45 0.6 2.8

Outline Dimensions

Contextual Info: Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.61 0.38 0.9 0.7 2.54 TYP. R 0.7 2 places R 0.5 1.4 1.3 2.85 2.65

STP5N90

Abstract: STP5N90FI CC-20-5
Contextual Info: SGS-THOMSON BteiOHLKeiTKsJiOei w /-v-n o . r- • TYPE V dss STP5N90 STP5N90FI . • . . . . , 900 V 900 V R STP5N90 STP5N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR d S O II < 2.4 Q < 2.4 Q Id 5A 2.8 A TYPICAL RDS(on) = 1.9 Q AVALANCHE RUGGED TECHNOLOGY

NEC D 586

Abstract: NEC Zener diode RD3.0M b3 zener D1471 NEC RD6.2M RD10M RD11M RD12M RD13M RD15M
Contextual Info: DATA SHEET ZENER DIODES RD2.0M to RD47M ZENER DIODES 200 mW 3-PIN MINI MOLD <R> DESCRIPTION PACKAGE DIMENSIONS Unit: mm Type RD2.0M to RD47M Series are planar type zener diodes 2.8 ± 0.2 0.4 +0.1 –0.05 APPLICATIONS 2 1 3 Circuits for, Constant Voltage, Constant Current,

Brooktree an-12

Contextual Info: Brooktree Bt851 Circuit Description 24-bit R G B Input Mode Linear non-gamma corrected digital RGB data is input via the R 0-R 7, G 0-G 7, and B 0-B 7 inputs. If GAMMA* is low, gamma correction (2.2 for NTSC and 2.8 for PAL) is applied, and the result converted to