WT2306 Search Results

WT2306 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
WT2306		Weitron	Surface Mount N-Channel Enhancement Mode MOSFET		Original	PDF
WT-2306		Weitron	Surface Mount N-Channel Enhancement Mode MOSFET		Original	PDF

WT2306 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2306 mosfet Abstract: s1815 WT2306 WT-2306 wt2306s06 wt sot23 Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 2.8 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE Super high dense cell design for low R DS ON R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V Rugged and Reliable *SOT-23 Package	Original	WT-2306 OT-23 OT-23 2306 mosfet s1815 WT2306 WT-2306 wt2306s06 wt sot23	PDF
Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 2.8 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V	Original	WT-2306 OT-23 OT-23	PDF
Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 2.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V	Original	WT-2306 OT-23 OT-23	PDF

Catalog Datasheet

Type

Document Tags

PDF

2306 mosfet

Abstract: s1815 WT2306 WT-2306 wt2306s06 wt sot23
Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 2.8 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low R DS ON R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package

Original

WT-2306 OT-23 OT-23 2306 mosfet s1815 WT2306 WT-2306 wt2306s06 wt sot23

PDF

Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 2.8 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V

Original

WT-2306 OT-23 OT-23

PDF

Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 2.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V

Original

WT-2306 OT-23 OT-23

PDF