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    RD12M Search Results

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    RD12M Price and Stock

    Rochester Electronics LLC RD12M-T2B-A

    RD12M-T2B-A - ZENER DIODES 200 M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RD12M-T2B-A Bulk 3,227
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    • 10000 $0.09
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    Rochester Electronics LLC RD12M-T1B-A

    RD12M - 200MW ZENER DIODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RD12M-T1B-A Bulk 2,704
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    • 10000 $0.11
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    Rochester Electronics LLC RD12M-T1B-AT

    RD12M-T1B-AT - ZENER DIODES 200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RD12M-T1B-AT Bulk 3,227
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    Rochester Electronics LLC RD12MW-T1B-AT

    RD12MW-T1B-AT - ZENER DIODES 200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RD12MW-T1B-AT Bulk 1,119
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    Nextgen Components RD12M28800S300

    OSC 12.288MHZ 3.3V HCMOS//15PF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RD12M28800S300 Reel 1,000
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    RD12M Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RD12M NEC Semiconductor Selection Guide 1995 Original PDF
    RD12M NEC ZENER DIODES 200 mW 3-PIN MINI MOLD Original PDF
    RD12M Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    RD12M00000S300 TGS (USA) OSC 12.0000MHZ HCMOS SMD Original PDF
    RD12M(0)-T2B-A Renesas RD12M(0)-T2B-A - ZENER DIODES 20 Original PDF
    RD12M28800S300 TGS (USA) OSC 12.2880MHZ HCMOS SMD Original PDF
    RD12MB1 NEC ZENER DIODE 200 mW 3-PIN MINI MOLD Original PDF
    RD12MB2 NEC ZENER DIODE 200 mW 3-PIN MINI MOLD Original PDF
    RD12M-L NEC 200mW Zener diode Original PDF
    RD12M-T1B NEC 200mW Zener diode Original PDF
    RD12M-T1B-A Renesas RD12M - 200MW ZENER DIODE Original PDF
    RD12M-T2B NEC 200mW Zener diode Original PDF
    RD12MVP1 Mitsubishi Silicon MOSFET Power Transistor, 175MHz, 10W Original PDF
    RD12MVS1 Mitsubishi Silicon MOSFET Power Transistor, 175 MHz, 12 W Original PDF
    RD12MVS1 Mitsubishi RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W Original PDF
    RD12MW NEC ZENER DIODES 200 mW 3-PIN MINI MOLD Original PDF
    RD12MWB NEC ZENER DIODE Original PDF

    RD12M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RD12MVP1

    Abstract: RD12MVS1 2040D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V


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    PDF AN-VHF-034-B RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/17meter) RD12MVS1 2040D

    DIODE GP 704

    Abstract: RD12MVP1 micro strip line
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 micro strip line

    RD12MVP1

    Abstract: RD12MVS1 mitsubishi 5218 5253 1007
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data


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    PDF AN-VHF-034-A RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/175MHz: RD12MVS1 mitsubishi 5218 5253 1007

    RD12MVS1

    Abstract: RD*mvs1 12w transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TENTATIVE DESCRIPTION RD12MVS1 Silicon MOSFET Power Transistor,175MHz,12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


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    PDF RD12MVS1 175MHz RD12MVS1 175MHz 175MHz) RD*mvs1 12w transistor

    transistor D 1666

    Abstract: transistor 801 diagrams
    Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) 7.0+/-0.2 0.2+/-0.05


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) Oct2011 transistor D 1666 transistor 801 diagrams

    RD12MVP1

    Abstract: top marking mitsubishi rd series
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) top marking mitsubishi rd series

    DIODE GP 704

    Abstract: GP 724 DIODE
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 GP 724 DIODE

    a 1757 transistor

    Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


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    PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758

    RD12MVP1

    Abstract: RD12MVS1
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout


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    PDF AN-VHF-034 RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/175MHz: RD12MVS1

    MOSFET mark J7

    Abstract: 78s12 RD12MVS 043mm transistor t06 19
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


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    PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) (b) 7.0+/-0.2 0.2+/-0.05


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz)

    transistor+SMD+12W+MOSFET

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


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    PDF RD12MVS1 175MHz, RD12MVS1 175MHz) transistor+SMD+12W+MOSFET

    a 1757 transistor

    Abstract: 78s12 GRM40 RD12MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original
    PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112

    DIODE GP 704

    Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 transistor mosfet 536 VGS-75 0452 mosfet

    a 1757 transistor

    Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


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    PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208

    78s12

    Abstract: RD12MVS1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


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    PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101

    RD10MW

    Abstract: RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD20MW RD39MW iza marking
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF 0MWRD39MW EIAJSC-59 RD10MW RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD20MW RD39MW iza marking

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    PDF

    diodos

    Abstract: R024M R082F 1S963 1SS53 RD27E 5w r010j r010j RD27F RD100E
    Text: TT* KJ Dioaes i — • Zonor D iod os DHO C o nstruction P lan ar Typo • S w itch in g D iod os V r (V) 30 50 75 30 50 75 Typo No. 1S963 1S954 1S955 1SS53 1SS54 1SS55 lo (mA) 100 200 200 100 100 100 P -0 .4 W • Tw in Diodas Typo No. 152835 152836 152837


    OCR Scan
    PDF 1S963 1S964 1S955 1SS53 1SS54 1SS55 RD10M RD11M RD12M RD13M diodos R024M R082F RD27E 5w r010j r010j RD27F RD100E

    RD4.7MW

    Abstract: No abstract text available
    Text: DATA SHEET NEC ZENER DIODES RD2.0MW to RD39MW ZENER DIODES 200 mW 3 PINS MINI MOLD D E S C R IP T IO N Type RD2.GMW to RD39MW Series are 3 PINS M ini M old PA CK A G E D IM E N S IO N S Unit: mm Package zener diodes possessing a llow able pow er dissipation o f


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    PDF RD39MW RD39MW RD4.7MW

    K1273

    Abstract: K2158 1A4M K1399 K2111 K680A a1464 D82C J356 k1587
    Text: QUICK REFERENCE GUIDE QUICK REFERENCE GUIDE 1 QUICK REFERENCE TABLE 3 PIN MINI MOLD □ Switching Diodes I Q UICK REFERENCE GUIDE_ Qß ! 3 PIN MINI MOLD SC-59 . _ □ Transistors and FETs v c e o 15 20 20 2S C 2223 2S A1462 40 30


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    PDF SC-59 A1462 2SB624 A1464 B736A K1582 J185W RD36M RD39M RD10FM K1273 K2158 1A4M K1399 K2111 K680A D82C J356 k1587