Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 Q017b32 32fi I SHGK PRELIMINARY KM616V513 CMOS SRAM 32,768 W O RD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 17, 20, 25n s (M ax.) • Low Pow er D issipation
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Q017b32
KM616V513
GG17b40
400mil)
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BFG51
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.
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bb53l31
Q017b7i
BFG51
OT-103)
BFG90A.
BFG51
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Z86e4012
Abstract: Z86E40 SXGR 86E4012
Text: ZIL06 INC 30E D B =1=104043 D017b24 -1. » Z I L - T -4 9 -1 9 -0 7 P r o d u c t S p e c if ic a t io n Z8ÌE40 CMOS Z8 OTP CCP MICROCONTROLLER FEATURES • 8-bit CMOS microcontroller ■ Digital inputs CMOS levels, Schmitt triggered
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l7b24
T-49-19-07
44-pin
40-Pln,
0G17bfl0
286E40
40-Pin
Z86e4012
Z86E40
SXGR
86E4012
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3 phase ac motor speed control
Abstract: receiver 4310 fea IH08 DIODE YW 431 scr transistor marking code E3t
Text: DS83CH20 DALLAS SEMICONDUCTOR DS83CH20 Unified I/O PRODUCT SPECIFICATION Revision 1.3 Copyright 1997 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding patents and other intellectual property rights, please refer to
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DS83CH20
2bl4130
0017bb3
DS83CH20
6550A
2bl413D
017fl4b
3 phase ac motor speed control
receiver 4310 fea
IH08 DIODE
YW 431 scr
transistor marking code E3t
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BFG90A
Abstract: BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136
Text: N AMER PHILIPS/DISCRETE 25 E bt.53131 Q Q 1 7 t 7 Î D Q • BFG51 T *- 31- I S~ P-N-P 2 GHz W IDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in C A T V and M A T V systems, up to 2 GHz.
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QQ17t73i
BFG51
OT-103)
BFG90A.
7Z94139
bh53131
0Q17b77
BFG90A
BFG51
Q017b
BFG90
SOT-103
SOT103
transistor BT 136
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MAG12M
Abstract: CSP1088 DSP1618 W2020 audi mmi TMS 2708 JL
Text: Microelectronics AT&T CSP1088 GSM Conversion Signal Processor for Cellular Handset and Modem Applications v2.2 Features Description • Seamless interface to the DSP1618 processor and W2020 RF transceiver The AT&T CSP1088 integrates the timing and control functions for GSM mobile application with the
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July1995
CSP1088
DSP1618
W2020
005002b
100-Pin
MAG12M
audi mmi
TMS 2708 JL
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TRW catalogue
Abstract: No abstract text available
Text: MI T S U B I S H I M E M O R Y / A S I C blE D • b S MT ñH S D D 1 7 b l 2 2T1 ■ MITI MITSUBISHI LSIs M S M W ^ y O J . L J P . R T - e . ^ r Ö . - e S r y S . - S S s p jx FAST PAGE MODE 4194304-BIT(262144-WORD BY 16-BIT)DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs,
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4194304-BIT
262144-WORD
16-BIT
40P5P
40pin
475mil
24Tfl5S
M5M4V4170J
TRW catalogue
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OF4456
Abstract: F65L
Text: M ITSUBISHI LSIs bEH'lßEß 0017b35 530 « Î 1 I T 4 I M5M82C800FP MI TS UB I S H I IUCMPTR/niPRC CMOS PROGRAMMABLE DMAC,IRC,TIMER DESCRIPTION The M 5 M 8 2 C 8 0 0 F P is a CM O S LSI equivalent to tw o M 5 M 8 2 C 3 7 A -5 , tw o M 5 M 8 2 C 5 9 A -2 , and one M 5 M 8 2 C 5 4 .
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0017b35
M5M82C800FP
100-pin
100P6
OF4456
F65L
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CXP80524
Abstract: CXP80P524 fuji lot code format
Text: CXP80P524 SONY CMOS 8-bit Single Chip Microcomputer Description The CXP80P524 is a CMOS 8-bit microcomputer which consists of arithmetic coprocessor, A/D converter, serial interface, timer/counter, time base timer, vector Interruption, high precision timing pattern
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CXP80P524
CXP80524
HC-49/U-03
80-pin
bytes/24K
CXP80P524Q-1-
80-ptn
FP-80P-L01
fuji lot code format
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MTS-8d
Abstract: TLR328 N10080
Text: de I lO^SSO Q01-7Bêb < | 9097250 TOSHIBA DISCRETE/OPTO TLG358, TLG359, 99D 17225 TLG328, TLG329 GaP RED LIG H T EMISSION 9 Green Color, L3.Snn(0.:53a)Character Height Numerical Display. • Pin Connections for Static Drive • Available Both Polarity of Connections, Consnon Cathode or Conoon Anode.
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Q01-7B
TLG358,
TLG359,
TLG328,
TLG329
TLG358
TLG359
TLG328
TLG329
001725b
MTS-8d
TLR328
N10080
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Untitled
Abstract: No abstract text available
Text: Ordering num ber : E N 4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No. 4 916A 256K 32768 words x 8 bits SRAM with OE and CE Control Pins I Overview The LC35256A, AS, AM, and AT are 32768 words x 8-bits asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CMOS memory cell,
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LC35256A,
AT-70/85/10
LC35256A
LC35256A
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • T 'ib M m E D C IlTfafel 41T ■ CMOS SRAM KM641005 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)
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KM641005
KM641005P/J-20:
150mA
KM641005P/J-25:
130mA
KM641005P/J-35:
110mA
KM641005P:
32-pin
400mil)
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n 431 transistor
Abstract: qml-38535 CDFP4-F16 el4 delta
Text: REVISIONS DESCRIPTION LTR DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD M ICRO CIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 8 PREPARED BY Marcia B Kelleher
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5962-E119-96
MIL-BUL-103.
MIL-BUL-103
R00470Ã
D017bME
n 431 transistor
qml-38535
CDFP4-F16
el4 delta
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Q3236I20N
Abstract: Q3036 Q3216 Qualcomm q3216 q32361 Q3236I-20N 213-044-602 q3236i Q3236 Q32361-20N
Text: Q3236 PHASE-LOCKED LO O P FR EQ U EN C Y SYNTHESIZER • Reference D ivisio n Ratios of 1 to 16 in D irect FEATU RES • Backwards Com patible w ith the Q3036 and Parallel Mode, or 1 to 64 in Serial and 8 -bit Bus Mode Q 3 2 1 6 PLL Chips • Program m ability for Faster M ultiplexing between
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Q3236
Q3036
Q3216PLL
100333b
Q3236I20N
Q3216 Qualcomm
q3216
q32361
Q3236I-20N
213-044-602
q3236i
Q3236
Q32361-20N
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MSM51V17180-70
Abstract: MSM51V17180-80
Text: O K I Semiconductor MSM51V17180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is OKI's CMOS silicon gate process technology.
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MSM51V17180
576-Word
18-Bit
MSM51V17180
MSM51VI7180
2048cycles/32ms
MSM51V17180-70
MSM51V17180-80
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mc1 electret microphone
Abstract: 3B159 CSP1088 electret condenser microphone element DSP1618 W2020 GMSK AIS audi mmi Q017b AIS TRANSMITTER GMSK
Text: Advance Data Sheet -a AT«T July 1995 ^^^Microelectronics AT&T CSP1088 GSM Conversion Signal Processor for Cellular Handset and Modem Applications v2.2 Features Description • Seamless interface to the DSP1618 processor and W2020 RF transceiver The AT&T CSP1088 integrates the timing and
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July1995
CSP1088
DSP1618
W2020
005002b
CSP1088
100-Pin
mc1 electret microphone
3B159
electret condenser microphone element
GMSK AIS
audi mmi
Q017b
AIS TRANSMITTER GMSK
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pj60
Abstract: pj70 CXP80712B CXP80716B CXP80720B CXP80724B CXP87700 SPC700 CMOS drum generator
Text: SO NY IC XP80712B /80716B/80720B/80724B CMOS 8-bit Single Chip Microcomputer Description The CXP80712B/80716B/80720B/80724B is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface, timer/counter, time base timer, high precision timing pattern generation circuit, PWM output,
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CXP80712B/80716B/80720B/80724B
CXP80712B/80716B/80720B/80724B
32kHz
100PIN
QFPIOWM420-A
OM010"
QFP100-P-141
pj60
pj70
CXP80712B
CXP80716B
CXP80720B
CXP80724B
CXP87700
SPC700
CMOS drum generator
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Untitled
Abstract: No abstract text available
Text: 16K X 32 CMOS DUAL-PORT STATIC RAM MODULE |d t / IDT7M1002 Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-density 512K CMOS Dual-Port RAM module • Fast access times The IDT7M 1002 is a 16K x 32 high-speed CM OS Dual-Port Static RAM Module constructed on a co-fired ceramic sub
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IDT7M1002
IDT7006)
IDT7M1002
64-bit
IDT7006
2S771
QQ17bbS
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headland 386
Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Text: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.
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LCB300K
DB04-000049-00,
D-102
I40lg
headland 386
transistor zo 607 MA 7S
b2211
full subtractor using ic 74138
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5082A CMOS LSI LC321664BJ, BM, BT-70/80 No. 5082A SA\YO 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664BJ, BM, BT is a CMOS dynamic RAM operating on a single 5 V power source and having a
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EN5082A
LC321664BJ,
BT-70/80
40-pin
A031BB
GG17b33.
A021B9
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pin diagram of ic 74163
Abstract: CD74HCT160 CD74HC160 IC 74160 CD54HC160 74163 four bit binary counter AL207 C074HC16
Text: .Technical Data F ile N u m b e r 1550 CD54/74HC/HCT160, CD54/74HC/HCT161 CD54/74HC/HCT162, CD54/74HC/HCT163 HARRIS SEMICOND SECTOR 27E » B 4302271 0G17hl2 □ • H A S 1 High-Speed CMOS Logic F U N C T IO N A L D IA G R A M PO PI P2 - Presettable Counters
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CD54/74HC/HCT160,
CD54/74HC/HCT161
CD54/74HC/HCT
CD54/74HC/HCT163
43G2271
0G17hl2
92CS-37958
CD54/74HC/HCT160
CD54/74HC/HCT162
pin diagram of ic 74163
CD74HCT160
CD74HC160
IC 74160
CD54HC160
74163 four bit binary counter
AL207
C074HC16
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Untitled
Abstract: No abstract text available
Text: gT\ f if t y 4K X 36 BiCMOS DUAL-PORT STATIC RAM MODULE IDT7M1014 Integrated Devi ce Technology, Inc. FEATURES DESCRIPTION • High-density 4K x 36 BiCMOS Dual-Port Static RAM module • Fast access times — Commercial: 15, 20ns — Military: 25, 30ns
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IDT7M1014
IDT7M1014
IDT7014ort
GD17L7E
017b73
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Untitled
Abstract: No abstract text available
Text: Microelectronics July 1995 AT&T CSP1088 GSM Conversion Signal Processor for Cellular Handset and Modem Applications v2.2 Features Description • Seamless interface to the DSP1618 processor and W2020 RF transceiver The AT&T CSP1088 integrates the timing and
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CSP1088
DSP1618
W2020
005002b
CSP1088
100-Pin
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Untitled
Abstract: No abstract text available
Text: T hat H E W IT T mL'ftm PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz
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AT-41470
AT41470
AT-41470
Q017b3fl
DQ17b3ti
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