BB53L31 Search Results
BB53L31 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BFG51Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz. |
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bb53l31 Q017b7i BFG51 OT-103) BFG90A. BFG51 | |
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Contextual Info: N AMER PHILIPS/DISCRETE — DbE D ~ • bb53l31 001573b 3 ■ I BF767 _ A_ T -3 I- IS SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope, primarily intended for application as gain con trolled amplifier e.g. in v.h.f. and u.h.f. television tuners in thick and thin-film circuits. |
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bb53l31 001573b BF767 LbS3T31 0D1573fl-7 T-31-15 | |
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Contextual Info: N AMER PHILIPS/DISCRETE 86D 0 1 8 9 4 ObE D • bb53T31 0 0 m i 3 2 f^ 3 Y -6 1 ’~ D BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V . The transistor is resistance stabilized and is |
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bb53T31 BLY88A |