PC6015
Abstract: No abstract text available
Text: SI ERRA SEMI CONDUCTOR '»r SIERRA SEMICONDUCTOR ÇORP 47E ì> 0242010 0001724 T «SSC Semicustom Capability Analog, Digital and EEPROM combined on the same chip. Sierra is a leading supplier of m ixed-signal standard cell ASICs. The Com pany's unique Triple Technology process perm its the
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c2315
Abstract: IC401B C2068 R1962 asus mcp 430 nvidia C1567 PJP5403 C2061 C51MV MCP51
Text: A B C D E T13M SCHEMATIC Revision 1.1 Content PAGE 2 3 4 5 PAGE SYSTEM PAGE REF. 1 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 AMD S1 CPU 1 -HT&MISC AMD S1 CPU(2)-DDRII
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C51MV
PCIEx16
RTL8201CL
ALC660-GR
EC-IT8510E
c2315
IC401B
C2068
R1962
asus
mcp 430 nvidia
C1567
PJP5403
C2061
C51MV MCP51
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VGT300039
Abstract: PT6045 VGT300022 PT6005
Text: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology
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T3flfl34?
VGT350/VGT353
85-micron
VGT350/353
VGT300039
PT6045
VGT300022
PT6005
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T6004
Abstract: PT6005
Text: S7E D HARRIS S E M I C O N D SE CT OR Bl 4302671 DDlböDS b 1 HAS CGA200 Seríes Advance Information Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate Array Series Features: • C ontin uou s Gate architectu re offers m axim um layou t e fficie ncy w ith 30% gate u tilizatio n fo r random logic
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CGA200
21-pF
T6004
PT6005
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R/CHN 041 diode
Abstract: No abstract text available
Text: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency
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VGT300
R/CHN 041 diode
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2 poles 6 ways Rotary Switch
Abstract: PT6005 PT603 lorlin uk rotary switch 12 positions PT6006 PT6002 PT6003 PT6004 PT6014 PT6461
Text: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:
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500mA
000Vac
500Vdc
CZ108,
2 poles 6 ways Rotary Switch
PT6005
PT603
lorlin uk rotary switch 12 positions
PT6006
PT6002
PT6003
PT6004
PT6014
PT6461
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TOP224
Abstract: EE22 bobbin EE28 transformer transformer 18-0-18 PSB 7200
Text: Products Catalog Table Of Contents DATABUS INTERFACE TRANSFORMER Page MIL-STD-1533 / MIL-T-21038 DataBus Interface Transformer . pm-dbxxx . 2-9 AUDIO Digital Audio Data Transmission . pm-adxxxx . 10
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MIL-STD-1533
MIL-T-21038
pmt10xx
100uF
25Vdc)
TOP224
EE22 bobbin
EE28 transformer
transformer 18-0-18
PSB 7200
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PT6045
Abstract: VSC370 PT6005
Text: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology
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VSC370
85-micron
000fiö
T-42-41
PT6045
PT6005
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ST CHN 021
Abstract: 13003 PT6005 PT6001
Text: V L S I TECHNOLOGY INC IflE D VLSI T ech n o lo g y T36Ô347 DGD3E7ti 3 in c . VSC320 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL FEATURES • A dvanced 1-m icron drawn gate length , silicon gate C M O S , 2-layer metal technology • Fast design tu rn-around tim e w ith
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VSC320
ST CHN 021
13003
PT6005
PT6001
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130 nm CMOS standard cell library
Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
Text: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS
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VGC450/VGC453
VGC453
VGC450
130 nm CMOS standard cell library
180 nm CMOS standard cell library Synopsys
130 nm CMOS standard cell library ST
C4002-1
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Untitled
Abstract: No abstract text available
Text: Schottky PowerMod CPT6QQ180 - ¥ ¥ - A — - R — - G — Baseplate A=Common Anode I ß N - Q -' 7 , 7 t U h i a= I r t |- z B I —^ r Baseplate Common Cathode -litIndustry Part Number °N i H ° h I d = i: M¡erosemi
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CPT6QQ180
CPT600200
CPT600180
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lorlin uk rotary switch 12 positions
Abstract: PT6005 CZ108 PT6002 PT6003 PT6004 PT6006 PT6034 PT6461 wafer rotary switches
Text: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:
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500mA
000Vac
500Vdc
CZ108,
lorlin uk rotary switch 12 positions
PT6005
CZ108
PT6002
PT6003
PT6004
PT6006
PT6034
PT6461
wafer rotary switches
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PT6042
Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
Text: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS
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VGC450/VGC453
VGC453
VGC450
PT6042
model values for 0.18 micron technology cmos
nd02d2
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integrated circuit TL 2262
Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology
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VSC470
integrated circuit TL 2262
PT6042
180 nm CMOS standard cell library Synopsys
compass ic
ND02D2
0.03 um CMOS technology
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full subtractor circuit using nand gates
Abstract: pt6021 PC6D10 PT6041-5 VGT200 PT6011 subtractor using TTL CMOS PT6005 PT6021-5
Text: s I TECHNOLOGY INC IflE =1300347 00032^2 1 • V LSI T e c h n o lo g y , in c. T~ 42-ll-C^ VAAST-INTELLIGENCE VGT200M SERIES GOVERNMENT PRODUCTS DIVISION CONTINUOUS GATE™ TECHNOLOGY Î3-M IC R 0N GATE ARRAY SERIES DESCRIPTION FEATURES Extensive Portable retargetable
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VGT200M
full subtractor circuit using nand gates
pt6021
PC6D10
PT6041-5
VGT200
PT6011
subtractor using TTL CMOS
PT6005
PT6021-5
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VGT200
Abstract: full subtractor circuit using decoder and nand ga
Text: VLSI T ec h n o lo g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in thirteen sizes from 960 to 54,000 usable gates The VGT200 Series is an advanced, high performance CMOS gate array
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VGT200
400-018-A-028
full subtractor circuit using decoder and nand ga
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CPT600180
Abstract: CPT600200
Text: Schottky PowerMod CPT6QQ180 - ¥ ¥ - A — - R — - G — Baseplate A=Common Anode I ß N - Q -' 7 , 7 t U h i a= I r t |- z B I —^ r Baseplate Common Cathode -litIndustry Part Number °N i H ° h I d = i: M¡erosemi
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CPT60Q180
CPT600200
CPT600180*
CPT600200*
CPT600180
CPT600200
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PT6005
Abstract: CZ108 PT6002 PT6003 PT6004 PT6006 PT6034 PT6461 lorlin uk rotary switch 12 positions
Text: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:
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500mA
000Vac
500Vdc
CZ108,
PT6005
CZ108
PT6002
PT6003
PT6004
PT6006
PT6034
PT6461
lorlin uk rotary switch 12 positions
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Untitled
Abstract: No abstract text available
Text: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:
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500mA
000Vac
500Vdc
CZ108,
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PT6045
Abstract: pt6021 PT6042 PC6013 PC6043 PC6015 pt6011 PC6D10 PC6001 pc6021
Text: 1.5ji ANALOG CELL LIBRARY • All cells have power down mode where appropriate. • All analog specifications are typical, 5 V, 25°C, and use a single 5 V supply, unless otherwise indicated. ANALOG-TO-DIGITAL CONVERTERS CELL NAME ADC4BT ADC10B ADC12B HADC8B
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ADC10B
ADC12B
10-Bit
12-Bit
DAC10B
17utput
PT6045
pt6021
PT6042
PC6013
PC6043
PC6015
pt6011
PC6D10
PC6001
pc6021
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74XX573
Abstract: 13OO3 13603 74X245 VY86C129 "vlsi technology" 2903x
Text: V L S I TECHNOLOGY INC 47E D ^300347 QQQ7in VLSI Tech n o lo g y in c . 7 «VTI IL D D iD IM l^ W MEMC29K VY86C129 29000 FAMILY MEMORY CONTROLLER FEATURES 1/2/4-way Interleave ROM Controller • AMD 29000 RISC MPU-compatible chip set 2 chips Support for two HP-style Cartridge
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16/32-bit
160-pin
MEMC29K
VY86C129
32-bit
MEMC29K/LPIC
74XX573
13OO3
13603
74X245
VY86C129
"vlsi technology"
2903x
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PT6042
Abstract: No abstract text available
Text: V L S I TECHNOLOGY I NC H7E J> T3flfl347 D a 0 ñ ñ 2 2 7 V L S I Tech n o lo gy , in c . - r - m PRELIMINARY VTI - m VSC450 SERIES O.8-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon
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T3flfl347
VSC450
T-42-41
PT6042
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